Substrate liquid processing apparatus
US-2020211865-A1 · Jul 2, 2020 · US
US12476118B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12476118-B2 |
| Application number | US-202318328057-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 2, 2023 |
| Priority date | Jun 3, 2022 |
| Publication date | Nov 18, 2025 |
| Grant date | Nov 18, 2025 |
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A substrate treating apparatus includes a process tank for storing a treatment liquid, a chamber for surrounding the process tank, a solvent vapor nozzle for supplying solvent vapor into the chamber, a cleaning liquid nozzle for supplying a cleaning liquid, and a controller. The controller causes immersion treatment, where a substrate is immersed in the treatment liquid stored in the process tank, to be performed for a preset period of time, and causes dry treatment, where the substrate processed with the treatment liquid and taken out of the process tank is dried with the solvent vapor supplied from the solvent vapor nozzle, to be performed. The controller causes the cleaning liquid nozzle to supply the cleaning liquid into the chamber and causes the process tank to be immersed in the cleaning liquid stored in the chamber, whereby the chamber cleaning treatment, where the chamber including an outer wall of the process tank is cleaned, is performed.
Opening claim text (preview).
What is claimed is: 1 . A substrate treating apparatus for treating a substrate, comprising: a process tank configured to store a treatment liquid; a chamber configured to surround the process tank; a solvent vapor nozzle configured to supply solvent vapor into the chamber; a water-repellent vapor nozzle configured to supply water-repellent vapor into the chamber; a cleaning liquid nozzle configured to supply a cleaning liquid into the chamber so as to be stored in the chamber; and a controller, the controller causing immersion treatment, wherein a substrate is immersed and processed in the treatment liquid stored in the process tank, to be performed for a preset period of time, and causing dry treatment, wherein the substrate after being processed with the treatment liquid and taken out of the process tank is dried with the solvent vapor supplied from the solvent vapor nozzle, to be performed, the controller causing the cleaning liquid nozzle to supply the cleaning liquid into the chamber, and causing the process tank to be immersed in the cleaning liquid supplied from the cleaning liquid nozzle and stored in the chamber, thereby causing chamber cleaning treatment, wherein the chamber including an outer wall of the process tank is cleaned, to be performed, the controller causing the chamber cleaning treatment to be performed after the immersion treatment, the controller causing the dry treatment to be performed after the chamber cleaning treatment, the controller causing water-repellent vapor supply treatment, wherein the water-repellent vapor is supplied through the water-repellent vapor nozzle into the chamber for making the substrate water-repellent, to be performed after the immersion treatment, and the controller causing the chamber cleaning treatment to be performed after the water-repellent vapor supply treatment. 2 . The substrate treating apparatus according to claim 1 , further comprising: an air pump configured to exhaust gas from the chamber, wherein the cleaning liquid nozzle is located at a lower part of the chamber for supplying the cleaning liquid into the chamber, and the controller causes the chamber cleaning treatment to be performed in a state where the chamber is decompressed with the air pump. 3 . The substrate treating apparatus according to claim 2 , wherein the air pump is configured to exhaust gas from the chamber via an exhaust port provided in a side wall of the chamber laterally of the process tank, and the controller causes the chamber cleaning treatment to be performed in a state where the chamber is decompressed while gas is exhausted from the chamber with the air pump. 4 . The substrate treating apparatus according to claim 2 , further comprising: a shield plate provided between the outer wall of the process tank and an inner wall of the chamber for shielding an atmosphere between an upper part of the chamber and the lower part of the chamber, and having an opening through which part of a treatment liquid, flowing out of the process tank, passes to the lower part of the chamber. 5 . The substrate treating apparatus according to claim 2 , wherein the cleaning liquid nozzle is located at a bottom of the chamber at a position overlapping the process tank in plan view. 6 . The substrate treating apparatus according to claim 2 , wherein the controller causes the chamber cleaning treatment to be performed when the solvent vapor nozzle supplies the solvent vapor into the chamber. 7 . The substrate treating apparatus according to claim 2 , wherein the controller causes exhaust treatment, wherein the cleaning liquid is exhausted from an outlet in the chamber, to be performed in a state where the chamber is decompressed with the air pump, and the controller causes the chamber cleaning treatment and the exhaust treatment to be repeated at a preset number of times. 8 . The substrate treating apparatus according to claim 2 , further comprising: an inert gas nozzle configured to supply inert gas into the chamber, wherein the controller causes the inert gas nozzle to supply the inert gas into the chamber after the dry treatment to return pressure of the decompressed chamber to atmospheric pressure. 9 . The substrate treating apparatus according to claim 2 , wherein the cleaning liquid nozzle is located in a posture toward the outer wall of the process tank, and the controller causes the cleaning liquid nozzle to supply the cleaning liquid into the chamber while the cleaning liquid hits the outer wall of the process tank in a state where the chamber is decompressed with the air pump. 10 . The substrate treating apparatus according to claim 2 , further comprising: a nozzle cover provided at a bottom in the chamber to face an upward ejection port of the cleaning liquid nozzle, wherein the nozzle cover includes a ceiling wall, and a plurality of side walls connected to the ceiling wall and formed with holes through which the cleaning liquid passes.
Vertical transfer of a batch of workpieces · CPC title
Cleaning during device manufacture · CPC title
by wet cleaning only (H10P70/52 takes precedence) · CPC title
with the semiconductor substrates being dipped in baths or vessels · CPC title
for drying · CPC title
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