Display apparatus

US12475734B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12475734-B2
Application numberUS-202118034787-A
CountryUS
Kind codeB2
Filing dateMay 21, 2021
Priority dateNov 2, 2020
Publication dateNov 18, 2025
Grant dateNov 18, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A display apparatus according to an embodiment of the present disclosure includes: a panel which includes a light emitting area and at least one non-light emitting area; a light emitting device which is disposed in the light emitting area and includes a first electrode, a light emitting stack, and a second electrode; a light converter which partitions an opening of the light emitting area and includes a light conversion material; and a capping layer disposed on the second electrode. The light converter includes a light conversion layer and a light amplifier.

First claim

Opening claim text (preview).

What is claimed is: 1 . A display apparatus comprising: a panel which comprises a light emitting area and at least one non-light emitting area; a light emitting device which is disposed in the light emitting area and comprises a first electrode, a light emitting stack, and a second electrode; a light converter which partitions an opening of the light emitting area and comprises a light conversion material; and a capping layer disposed on the second electrode, a light receiver disposed near the light converter; wherein the light converter comprises a light conversion layer and a light amplifier and the light receiver comprises a light absorption layer; wherein a thickness from a top of the light amplifier to a bottom of the second electrode or to a bottom of the capping layer and a thickness from a top of the light absorption layer to the bottom of the second electrode or to the bottom of the capping layer is in a range of 1.275 μm to 6.375 μm so that constructive interference occurs. 2 . The display apparatus of claim 1 , wherein the light conversion layer covers an edge of the first electrode, and the light emitting stack and the second electrode are disposed on the light conversion layer in such a manner as to overlap each other. 3 . The display apparatus of claim 1 , further comprising a planarization layer between the light conversion layer and the light amplifier, wherein the light conversion layer is disposed on the light amplifier and then they overlap each other. 4 . The display apparatus of claim 2 , wherein the light conversion material is a material that absorbs light in a visible light region and emits light in a near-infrared region. 5 . The display apparatus of claim 4 , wherein the near-infrared has a wavelength of 780 nm to 990 nm. 6 . The display apparatus of claim 1 , wherein the light receiver does not overlap at least one of the light conversion layer, the planarization layer, and the light amplifier. 7 . The display apparatus of claim 1 , wherein the light receiver further comprises a reflective electrode. 8 . The display apparatus of claim 4 , wherein the second electrode and the capping layer extend over the light conversion layer, and wherein a part of the light the near-infrared region emitted from the light conversion layer is reflected from an interface between the second electrode and the capping layer, so that the constructive interference occurs. 9 . A display apparatus comprising: a substrate: a transistor disposed on the substrate; an organic light emitting diode disposed on the transistor; a capping layer disposed on the organic light emitting diode; an encapsulation part disposed on the capping layer; a cover glass disposed on the encapsulation part; and a near-infrared converter which is disposed in the form of matrix and partitions an opening, a near-infrared light receiver disposed adjacent to the near-infrared converter; wherein the organic light emitting diode comprises a first electrode, a light emitting stack, and a second electrode, and wherein the near-infrared converter comprises a light conversion layer and a light amplifier, the near-infrared light receiver comprises a light absorption layer and the capping layer extends to a top of the light conversion layer, wherein a thickness from a top of the light amplifier to a bottom of the second electrode or to a bottom of the capping layer and a thickness from a top of the light absorption layer to the bottom of the second electrode or to the bottom of the capping layer is in a range of 1.275 μm to 6.375 μm so that constructive interference occurs. 10 . The display apparatus of claim 9 , wherein the light conversion layer comprises a light conversion material, and wherein the light conversion material absorbs light in a visible light region and emits light in a near-infrared region. 11 . The display apparatus of claim 10 , wherein the light in a near-infrared region emitted from the light conversion layer is reflected from a top surface of the light amplifier. 12 . The display apparatus of claim 11 , wherein a part of the light in a near-infrared region reflected from a bottom surface of the capping layer disposed on the light conversion layer meets the light in a near-infrared region reflected from the top surface of the light amplifier, so that the constructive interference occurs. 13 . The display apparatus of claim 1 , wherein the transistor comprises a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and wherein the near-infrared light receiver further comprises a transparent electrode, and a reflective electrode. 14 . The display apparatus of claim 13 , wherein the near-infrared reflected from an object outside the cover glass is incident on the light absorption layer of the near-infrared light receiver, and a change in current of the light absorption layer is detected. 15 . The display apparatus of claim 13 , wherein the capping layer extends to a top surface of the near-infrared light receiver, wherein a part of the near-infrared is reflected from the light absorption layer, and the part of the near-infrared reflected from the light absorption layer is reflected from a bottom surface of the capping layer, so that the constructive interference occurs.

Assignees

Inventors

Classifications

  • comprising light absorbing layers, e.g. black layers · CPC title

  • multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers · CPC title

  • comprising colour filters or colour changing media [CCM] · CPC title

  • H10K59/65Primary

    OLEDs integrated with inorganic image sensors · CPC title

  • OLEDs integrated with touch screens · CPC title

Patent family

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Frequently asked questions

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What does patent US12475734B2 cover?
A display apparatus according to an embodiment of the present disclosure includes: a panel which includes a light emitting area and at least one non-light emitting area; a light emitting device which is disposed in the light emitting area and includes a first electrode, a light emitting stack, and a second electrode; a light converter which partitions an opening of the light emitting area and i…
Who is the assignee on this patent?
Lg Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10K59/65. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 18 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).