Method for manufacturing a one-piece silicon device with flexible blades, in particular for timepieces
US-2021247721-A1 · Aug 12, 2021 · US
US12474674B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12474674-B2 |
| Application number | US-202318197302-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 15, 2023 |
| Priority date | Jul 26, 2022 |
| Publication date | Nov 18, 2025 |
| Grant date | Nov 18, 2025 |
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A method for manufacturing a silicon timepiece component ( 1 ) with a functional external profile.
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The invention claimed is: 1 . A method for manufacturing a silicon timepiece component, comprising the following steps of: a) procuring an silicon-on-insulator (SOI) wafer successively comprising a silicon device layer, a silicon oxide bonding layer, and a silicon handle layer; b) growing a silicon oxide layer on a front face and a rear face of the SOI wafer; c) etching the silicon oxide layer on the front face, then the silicon device layer by deep reactive ion etching (DRIE), to form the silicon timepiece component, as well as an internal anchor element and a bridge of material connecting said anchor element to an inner wall of the timepiece component in a non-critical area of the inner wall; d) etching the silicon oxide layer on the rear face, then the silicon handle layer by DRIE, to form at least one narrow bridge and at least one rear anchor integral with the at least one narrow bridge, the rear anchor being connected to the anchor element of the device layer by the silicon oxide bonding layer bonding the silicon device and silicon handle layers; and e) releasing the silicon timepiece component by wet etching, the silicon timepiece component being held on the SOI wafer by the anchor element via the bridge of material, the silicon oxide bonding layer remaining present only where both the silicon device layer and the silicon handle layer have not been etched away by the wet etching, and the whole resting on the at least one rear anchor connected to the at least one narrow bridge, which is connected to the silicon handle layer so as to make all faces of the silicon timepiece component accessible, wherein the inner wall of the silicon timepiece component is the wall of a hole arranged to receive a shaft or the wall of an opening internal to the silicon timepiece component. 2 . The method according to claim 1 , wherein the silicon oxide bonding layer is partially present between the anchor element and the rear anchor at the end of step e). 3 . The method according to claim 1 , wherein the narrow bridge and the bridge of material are not superimposed. 4 . The method according to claim 1 , further comprising in step d) a step of forming an integrated shadow mask during the DRIE of the silicon handle layer to produce a deliberate and intentional pattern of openings on the rear face, said openings allowing for an elaborate decoration by deposition. 5 . The method according to claim 1 , further comprising a step f) of wafer-finishing the front, rear and/or side faces of the silicon timepiece component, the wafer-finishing step being depositing layers, patterning and/or decorating. 6 . The method according to claim 1 , wherein the silicon timepiece component is a wheel, a cam, a hand, a lever, a snail, an index or an applique. 7 . A timepiece component obtained by implementing a method for manufacturing a silicon timepiece component according to claim 1 .
for treatment of the material, e.g. surface treatment · CPC title
attached or inlaid numbers (attaching of jewels or ornaments G04B47/042; arrangements for attaching bearing jewels, or the like G04D3/04) · CPC title
Hour wheels; Racks or rakes; Snails or similar control mechanisms · CPC title
Construction and manufacture of the hands; arrangements for increasing reading accuracy (hands with illumination G04B19/305; specially shaped hands, e.g. figures or pictures G04B45/0061; clockwork in the hands G04B45/043; invisible drive of the hands G04B45/046) · CPC title
for working with non-mechanical means, e.g. chemical, electrochemical, metallising, vapourising; with electron beams, laser beams · CPC title
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