Multi-dimensional multi-parameter gas sensor and manufacturing method therefor, and gas detection method

US12474291B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12474291-B2
Application numberUS-202117904626-A
CountryUS
Kind codeB2
Filing dateJan 26, 2021
Priority dateApr 10, 2020
Publication dateNov 18, 2025
Grant dateNov 18, 2025

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A gas sensor has a sensing structure that is used for generating, for a variety of gases, multiple corresponding electric signals. It has a plurality of measuring electrodes and a gas-sensitive film coating the measuring electrodes; and a micro-heating structure that is used for providing different heating temperatures for the sensing structure, and a silicon-based substrate and a heating layer disposed on the silicon-based substrate. The heating layer integrates heating electrodes of different sizes or different layouts to form a plurality of heating regions of different temperatures, and the plurality of measuring electrodes are respectively disposed in the corresponding heating regions. By integrating heating electrodes of different sizes or different layouts on a single micro-heating structure to form heating regions of different temperatures, a complex atmosphere detection function of a variety of sensing materials at different temperatures is achieved.

First claim

Opening claim text (preview).

The invention claimed is: 1 . A gas sensor, comprising: a sensing structure for generating, in response to a plurality of gases, a plurality of corresponding electric signals, comprising a plurality of measuring electrodes, wherein each measuring electrodes has a gas-sensitive film coating applied thereon; and a micro-heating structure for heating the sensing structure, comprising a silicon-based substrate and a heating layer disposed on the silicon-based substrate, wherein the heating layer integrates a plurality of heating electrodes to form a plurality of heating regions to be heated to more than one temperatures, and each of the plurality of measuring electrodes is integrated in a corresponding heating region, and wherein at least one of the plurality of heating electrodes has a cross-sectional area or a length different from another heating electrode among the plurality of heating electrodes. 2 . The gas sensor according to claim 1 , wherein each of the plurality of heating electrodes is a heating resistance wire having a cross-sectional thickness of 300 nm-500 nm, a cross-sectional width of 10 μm-100 μm, and a length of 1.5 mm-20 mm. 3 . The gas sensor according to claim 2 , wherein the plurality of heating resistance wires are spaced apart from one another; and a spacing between two adjacent heating resistance wires is 2-5 times the cross-sectional width of the heating resistance wires. 4 . The gas sensor according to claim 2 , wherein each of the plurality of heating resistance wires is connected end to end to form a circular ring. 5 . The gas sensor according to claim 4 , comprising a first heating resistance wire, a second heating resistance wire, and a third heating resistance wire, wherein: the first heating resistance wire has a cross-sectional thickness of 300 nm and a cross-sectional width of 20 μm, and is connected end to end to form a circular ring with an inner ring diameter of 5 μm; the second heating resistance wire has a cross-sectional thickness of 300 nm and a cross-sectional width of 15 μm, and is connected end to end to form a circular ring with an inner ring diameter of 30 μm; and the third heating resistance wire has a cross-sectional thickness of 300 nm and a cross-sectional width of 10 μm, and is connected end to end to form a circular ring with an inner ring diameter of 65 μm. 6 . The gas sensor according to claim 5 , wherein the first heating resistance wire forms a first heating region to heated to a heating temperature of 570-630° C.; the second heating resistance wire forms a second heating region to be heated to a heating temperature of 370-430° C.; and the third heating resistance wire forms a third heating region to be heated to a heating temperature of 220-280° C. 7 . The gas sensor according to claim 1 , wherein each of the plurality of heating electrodes is a heating resistance wire having more than one segments, each segment of the heating resistance wire has a different cross-sectional area and corresponds to a heating region. 8 . The gas sensor according to claim 7 , wherein each segment of the heating resistance wire is arranged in a serpentine curve, and one of the plurality of measuring electrodes is disposed in a bent arc region of a segment of the heating resistance wire. 9 . The gas sensor according to claim 8 , wherein the heating resistance wire comprises a first-segment resistance wire, a second-segment resistance wire, and a third-segment resistance wire, wherein: the first-segment resistance wire has a cross-sectional thickness of 100 nm-300 nm and a cross-sectional width of 10 μm, and the first-segment resistance wire is bent in a serpentine curve with a spacing of 20 μm; the second-segment resistance wire has a cross-sectional thickness of 100 nm-300 nm and a cross-sectional width of 15 μm, and the second-segment resistance wire is bent in a serpentine curve with a spacing of 10 μm; and the third-segment resistance wire has a cross-sectional thickness of 100 nm-300 nm and a cross-sectional width of 5 μm, and the third-segment resistance wire is bent in a serpentine curve with a spacing of 30 μm. 10 . The gas sensor according to claim 9 , wherein the first-segment resistance wire forms a first heating region to be heated to a heating temperature of 360-440° C.; the second-segment resistance wire forms a second heating region to be heated to a heating temperature of 580-600° C.; and the third-segment resistance wire forms a third heating region to be heated to a heating temperature of 300-360° C. 11 . The gas sensor according to claim 1 , wherein the plurality of heating electrodes are disposed in a central region of the heating layer, and the plurality of measuring electrodes are distributed around the central region and are located on the same plane as the plurality of heating electrodes. 12 . The gas sensor according to claim 11 , wherein a geometry length of the heating layer is 1-6 times a geometry length of the central region, and the geometry length of the heating layer is between 500 μm and 3000 μm. 13 . The gas sensor according to claim 12 , wherein the plurality of heating electrodes is formed by winding a heating resistance wire; and the heating resistance wire has a cross-sectional thickness of 300 nm-500 nm, a cross-sectional width of 10 μm-100 μm and a length of 1.5 mm-13 mm. 14 . A gas detection method, comprising detecting a gas by exposing the gas sensor according to claim 1 to the gas. 15 . The gas detection method according to claim 14 , wherein the gas is a mixture comprising two or more different gases. 16 . A manufacturing method for a gas detector, comprising the following steps: preparing a micro-heating structure by disposing, on a silicon-based substrate, a plurality of heating resistance wires with different cross-sectional areas or a heating resistance wire having a plurality of segments with different cross-sectional areas to form the plurality of heating regions; disposing a measuring electrode in each of the plurality of heating regions; coating a surface of each measuring electrode with a gas-sensitive film to form a sensing structure, wherein the gas-sensitive film is made from a metal oxide nano-gas-sensitive material selected from SnO 2 , WO 3 , In 2 O 3 , NiO, MoO 2 , Co 3 O 4 , ZnO, and MoS; and packaging the micro-heating structure and the sensing structure as a micro-sensing chip. 17 . The manufacturing method for the gas detector according to claim 16 , wherein, in the coating step, the surface of each measuring electrode is coated with a gas-sensitive film that matches the heating temperature of the heating region in which the measuring electrode is located.

Assignees

Inventors

Classifications

  • for analysing gases · CPC title

  • specially adapted to detect a particular component (physical analysis of gaseous biological material G01N33/497) · CPC title

  • involving nanosized elements, e.g. nanotubes, nanowires · CPC title

  • of an electrically-heated body in dependence upon change of temperature · CPC title

  • Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors · CPC title

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What does patent US12474291B2 cover?
A gas sensor has a sensing structure that is used for generating, for a variety of gases, multiple corresponding electric signals. It has a plurality of measuring electrodes and a gas-sensitive film coating the measuring electrodes; and a micro-heating structure that is used for providing different heating temperatures for the sensing structure, and a silicon-based substrate and a heating layer…
Who is the assignee on this patent?
China Petroleum & Chem Corp, Sinopec Res Institute Of Safety Engineering Co Ltd
What technology area does this patent fall under?
Primary CPC classification G01N27/407. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 18 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).