Method of preparing quantum dot, quantum dot, and electronic apparatus including the quantum dot

Patent metadata

Field	Value
Publication number	US-12473487-B2
Application number	US-202217960284-A
Country	US
Kind code	B2
Filing date	Oct 5, 2022
Priority date	Dec 17, 2021
Publication date	Nov 18, 2025
Grant date	Nov 18, 2025

Abstract

Provided are a method of preparing a quantum dot, a quantum dot prepared thereby, and an electronic apparatus including the quantum dot. The method includes: preparing a core including a Group III element, a Group V element, and gallium (Ga); and preparing a shell covering the core by using a composition for forming the shell. The composition for forming the shell includes a first additive, and the first additive is a metal halide.

First claim

What is claimed is:

1 . A method of preparing a quantum dot, the method comprising:
preparing a core comprising a Group III element, a Group V element, and gallium (Ga); and preparing a shell covering the core by using a composition for forming the shell, wherein the composition for forming the shell comprises a first additive, and the first additive is a metal halide; wherein the quantum dot is configured to emit green light having a maximum emission wavelength in a range of about 500 nanometers (nm) to about 590 nm.

2 . The method of claim 1 , wherein the composition for forming the shell further comprises: at least one of a precursor comprising a Group II element, a precursor comprising a Group III element, a precursor comprising a Group V element, and a precursor comprising a Group VI element.

3 . The method of claim 1 , wherein the composition for forming the shell further comprises a second additive, and
the second additive is an aliphatic amine.

4 . The method of claim 1 , wherein the preparing of the core comprises
preparing the core by using a composition for forming the core, wherein the composition for forming the core comprises a precursor comprising a Group III element, a precursor comprising a Group V element, and a Ga precursor.

5 . The method of claim 4 , wherein the composition for forming the core further comprises a third additive, and
the third additive is an aliphatic amine.

6 . The method of claim 4 , wherein the composition for forming the core further comprises a fourth additive, and
the fourth additive is a fatty acid or a salt thereof.

7 . The method of claim 1 , wherein an amount of Ga in the core is in a range of about 1 part by weight to about 200 parts by weight with respect to 100 parts by weight of the Group III element in the core.

8 . The method of claim 1 , wherein the core comprises three or more elements which are different from each other.

9 . The method of claim 1 , wherein the Group III element in the core comprises Al, In, or Tl.

10 . The method of claim 1 , wherein the shell comprises a Group II-VI compound, a Group III-V compound, or any combination thereof.

11 . The method of claim 1 , wherein the core comprises InGaP, and
the shell comprises ZnSe, ZnS, ZnTe, ZnO, ZnMg, ZnMgSe, ZnMgS, ZnMgAl, GaSe, GaTe, GaP, GaAs, GaSb, InAs, InSb, AlP, AlAs, AlSb, or any combination thereof.

12 . The method of claim 1 , wherein the shell comprises a first shell layer and a second shell layer, and
where the first shell layer and the second shell layer are different from each other.

13 . The method of claim 12 , wherein
the shell further comprises an intermediate shell layer arranged between the first shell layer and the second shell layer, and the intermediate shell layer comprises a material that is identical to a material included in the first shell layer and a material included in the second shell layer.

14 . The method of claim 1 , wherein the shell comprises a first shell layer and a second shell layer, and where a material included the first shell layer and a material included the second shell layer are identical to each other.

15 . The method of claim 1 , wherein a concentration of an element comprised in the shell forms a concentration gradient according to a distance from the core.

16 . The method of claim 1 , further comprising:
surface-treating a surface of the shell with an organic ligand or a metal halide.

17 . The method of claim 1 , wherein
a thickness of the shell is in a range of about 0.5 nm to about 5 nm.

18 . The method of claim 1 , wherein a full width of half maximum (FWHM) of an emission wavelength spectrum of the quantum dot is 50 nm or less.

19 . A quantum dot prepared by the method of claim 1 .

20 . An electronic apparatus comprising the quantum dot of claim 19 .

Assignees

• Samsung Display Co Ltd

Inventors

• Jung Junehyuk
• Chang Jaebok
• Kim Sungjae
• Nam Juo
• Lee Donghee
• Lee Taekjoon

Classifications

• C09K11/703

  with zinc or cadmium · CPC title

• C09K11/623

  with zinc or cadmium · CPC title

• C09K11/0883

  Arsenides; Nitrides; Phosphides · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title