Method for selective separation and transfer of two-dimensional material and method of fabricating device using the same

Patent metadata

Field	Value
Publication number	US-12468222-B2
Application number	US-202318113113-A
Country	US
Kind code	B2
Filing date	Feb 23, 2023
Priority date	Feb 23, 2022
Publication date	Nov 11, 2025
Grant date	Nov 11, 2025

Abstract

A disclosed method of selective separation and transfer of 2D material may include preparing a substrate structure including an adhesion target layer in which at least two different material layers are arranged to be in contact with each other laterally, preparing a crystalline material member including a 2D material, wherein the 2D material constitutes a unit layer, and a plurality of the unit layers form a layered structure through bonding, adhering the crystalline material member to a surface of the adhesion target layer so that a bond is formed between the crystalline material member and the adhesion target layer, and separating the crystalline material member and the adhesion target layer so that a 2D material layer pattern separated from the crystalline material member is formed on the surface of the adhesion target layer.

First claim

What is claimed is:

1 . A method of selective separation and transfer of a 2D material, comprising:
preparing a substrate structure including an adhesion target layer in which at least two different material layers are arranged to be in contact with each other laterally; preparing a crystalline material member including a 2D material, wherein the 2D material constitutes a unit layer, and a plurality of the unit layers form a layered structure through bonding; adhering the crystalline material member to a surface of the adhesion target layer so that a bond is formed between the crystalline material member and the adhesion target layer; and separating the crystalline material member and the adhesion target layer so that a 2D material layer pattern separated from the crystalline material member is formed on the surface of the adhesion target layer, wherein a shape of the 2D material layer pattern is defined by the at least two material layers.

2 . The method of selective separation and transfer of a 2D material of claim 1 , wherein the preparing the substrate structure includes:
forming the adhesion target layer having a desired pattern shape on a base substrate; forming a supporting layer on the adhesion target layer; forming a handling layer on the supporting layer; and separating a stack structure including the adhesion target layer, the supporting layer, and the handling layer from the base substrate.

3 . The method of selective separation and transfer of a 2D material of claim 1 ,
wherein the at least two material layers includes a first material layer and a second material layer, a bonding force between the first material layer and the 2D material is greater than a bonding force between the plurality of unit layers, a bonding force between the second material layer and the 2D material is smaller than the bonding force between the plurality of unit layers, wherein the 2D material layer pattern is formed on the first material layer instead of the second material layer.

4 . The method of selective separation and transfer of a 2D material of claim 1 , wherein the at least two material layers includes a first material layer and a second material layer, and the first material layer and the second material layer have different surface roughness.

5 . The method of selective separation and transfer of a 2D material of claim 1 ,
wherein the at least two material layers include a first material layer and a second material layer, wherein the first material layer is any one of a conductor, a semiconductor and an insulator, wherein the second material layer is any one of a conductor, a semiconductor and an insulator.

6 . The method of selective separation and transfer of a 2D material of claim 1 , further comprising transferring the 2D material layer pattern formed on the surface of the adhesion target layer to a separate adhesion target substrate from the adhesion target layer, and wherein a bonding force between the adhesion target substrate and the 2D material is greater than a bonding force between the adhesion target layer and the 2D material.

7 . The method of selective separation and transfer of a 2D material of claim 1 ,
wherein the at least two material layers includes a first material layer, a second material layer disposed on each of both sides of the first material layer, and a third material layer disposed around at least the second material layer, wherein the 2D material layer pattern is formed on the first and second material layers instead of the third material layer.

8 . The method of selective separation and transfer of a 2D material of claim 7 ,
wherein the first material layer is a first insulator, wherein the second material layer is a conductor, wherein the third material layer is a second insulator.

9 . The method of selective separation and transfer of a 2D material of claim 7 , wherein the 2D material layer pattern is a channel layer pattern interconnecting the two second material layers disposed on both sides of the first material layer.

10 . The method of selective separation and transfer of a 2D material of claim 1 , wherein the 2D material includes one of a 2D perovskite material and a transition metal dichalcogenide (TMD) material.

11 . A method for selective separation and transfer of a 2D material, comprising:
preparing a substrate structure including an adhesion target layer in which at least two different material layers are arranged to be in contact with each other laterally; preparing a crystalline material member including a 2D material, wherein the 2D material constitutes a unit layer, and a plurality of the unit layers form a layered structure through bonding; adhering the crystalline material member to a surface of the adhesion target layer so that a bond is formed between the crystalline material member and the adhesion target layer; separating the crystalline material member and the adhesion target layer so that the 2D material layer separated from the crystalline material member remains on the surface of the adhesion target layer; adhering the 2D material layer disposed on the surface of the adhesion target layer to a surface of the adhesion target substrate; and separating the adhesion target layer and the adhesion target substrate so that a 2D material layer pattern separated from the 2D material layer in a pattern form remains on the surface of the adhesion target substrate, wherein a shape of the 2D material layer pattern is defined by the at least two material layers and the adhesion target substrate.

12 . The method for selective separation and transfer of a 2D material of claim 11 ,
wherein the at least two material layers include a first material layer and a second material layer, a bonding force between the first material layer and the 2D material is greater than a bonding force between the plurality of unit layers, a bonding force between the second material layer and the 2D material is greater than the bonding force between the plurality of unit layers, wherein the 2D material layer remains on the first and second material layers.

13 . The method for selective separation and transfer of a 2D material of claim 12 ,
wherein the bonding force between the first material layer and the 2D material is greater than a bonding force between the adhesion target substrate and the 2D material, wherein the bonding force between the second material layer and the 2D material is smaller than the bonding force between the adhesion target substrate and 2D material, wherein the 2D material layer pattern remains on a region corresponding to the second material layer on the adhesion target substrate.

14 . The method for selective separation and transfer of a 2D material of claim 12 ,
wherein the at least two material layers include first material layer and the second material layer, wherein the first material layer and second material layer have different surface roughness.

15 . A method for selective separation and transfer of a 2D material, comprising:
preparing a substrate structure including an adhesion target layer in which at least two different material layers are arranged to be in contact with each other laterally; preparing a crystalline material member including a 2D material, wherein the 2D material constitutes a unit layer, and a plurality of the unit layers form a layered structure through bonding; adhering the crystalline material member to a surface of the adhesion target layer so that a bond is formed between the crystalline material member and the adhesion target layer; and separating the cry

Assignees

• Seoul Nat Univ R&Db Foundation

Inventors

• Lee Yun Seog
• Park Ki-Tae
• Yoon Sunggun
• Chu Young Ho

Classifications

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title