Piezoelectric Element And Piezoelectric Element-Applied Device
US-2018287048-A1 · Oct 4, 2018 · US
US12464950B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12464950-B2 |
| Application number | US-202017623380-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 30, 2020 |
| Priority date | Aug 30, 2019 |
| Publication date | Nov 4, 2025 |
| Grant date | Nov 4, 2025 |
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Various embodiments may provide an electromechanical responsive film. The electromechanical responsive film may include a composition including sodium (Na), potassium (K), niobium (Nb) and oxygen (O). The composition may have a formula (Na x K y )NbO 3-δ , wherein 0≤x<1, wherein 0≤y<1, and wherein 0<x+y<1. The composition may satisfy at least one condition selected from a group consisting of a first condition of (x+y+4)/2≤(3−δ)≤(x+y+5)/2 and a second condition of 0<δ<1.
Opening claim text (preview).
The invention claimed is: 1 . An electromechanical responsive film including: a composition including sodium (Na), potassium (K), niobium (Nb) and oxygen (O); wherein the composition has a formula of (Na x K y )NbO 3-δ ; wherein 0≤x<1; wherein 0≤y<1; wherein 0<x+y<1; and wherein the composition satisfies at least one condition selected from a group consisting of a first condition of (x+y+4)/2≤(3-δ)≤(x+y+5)/2 and a second condition of 0<δ<1. 2 . The electromechanical responsive film according to claim 1 , wherein the electromechanical responsive film is an epitaxial film. 3 . The electromechanical responsive film according to claim 1 , wherein the electromechanical responsive film is a polycrystalline film. 4 . The electromechanical responsive film according to claim 1 , wherein the electromechanical responsive film has an effective longitudinal piezoelectric strain coefficient (|d 33 |) higher than 250 pm/V. 5 . The electromechanical responsive film according to claim 4 , wherein the effective longitudinal piezoelectric strain coefficient (|d 33 |) is higher than 500 pm/V. 6 . The electromechanical responsive film according to claim 1 , wherein x is equal to 0. 7 . The electromechanical responsive film according to claim 1 , wherein y is equal to 0. 8 . The electromechanical responsive film according to claim 7 , wherein the formula is Na 0.86 NbO 2.93 . 9 . The electromechanical responsive film according to claim 1 , wherein the formula is (K 0.17 Na 0.65 )NbO 2.91 . 10 . The electromechanical responsive film according to claim 1 , wherein the electromechanical responsive film has a ferroelectric phase-paraelectric phase transition temperature of about 450° C. 11 . The electromechanical responsive film according to claim 1 , wherein the electromechanical responsive film has an orthorhombic phase-tetragonal phase transition temperature of about 210° C. 12 . The electromechanical responsive film according to claim 1 , wherein the electromechanical responsive film has a thickness of any value selected from 50 nm to 10 μm. 13 . A stacked arrangement including: an electromechanical responsive film including a composition including sodium (Na), potassium (K), niobium (Nb) and oxygen (O); wherein the composition has a formula of (Na x K y )NbO 3-δ ; wherein 0≤x<1; wherein 0≤y<1; wherein 0<x+y<1; and wherein the composition satisfies at least one condition selected from a group consisting of a first condition of (x+y+4)/2≤(3−δ)≤(x+y+5)/2 and a second condition of 0<δ<1. 14 . The stacked arrangement according to claim 13 , wherein the stacked arrangement includes: a substrate; a bottom electrode layer on the substrate; and a top electrode layer such that the electromechanical responsive film is between the top electrode layer and the bottom electrode layer. 15 . The stacked arrangement according to claim 14 , wherein the substrate is a silicon wafer including a silicon oxide layer; wherein the bottom electrode includes platinum; and wherein the electromechanical responsive film is a polycrystalline film of Na 0.86 NbO 2.93 . 16 . The stacked arrangement according to claim 13 , wherein the stacked arrangement includes: a substrate; and an electrode layer such that the electromechanical responsive film is between the electrode layer and the substrate. 17 . The stacked arrangement according to claim 16 , wherein the substrate includes a single crystal of niobium-doped strontium titanate (Nb-doped SrTiO 3 ); and wherein the electromechanical responsive film is an epitaxial film of Na 0.86 NbO 2.93 or (K 0.17 Na 0.65 )NbO 2.91 . 18 . A method of forming an electromechanical responsive film, the method including: forming the electromechanical responsive film such that the electromechanical responsive film includes a composition including sodium (Na), potassium (K), niobium (Nb) and oxygen (O); wherein the composition has a formula of (Na x K y )NbO 3-δ ; wherein 0≤x<1; wherein 0≤y<1; wherein 0<x+y<1; and wherein the composition satisfies at least one condition selected from a group consisting of a first condition of (x+y+4)/2≤(3−δ)≤(x+y+5)/2 and a second condition of 0<δ<1. 19 . The method according to claim 18 , wherein the electromechanical responsive film is formed over a substrate via sputtering. 20 . A method of forming a stacked arrangement, the method including: forming an electromechanical responsive film including a composition including sodium (Na), potassium (K), niobium (Nb) and oxygen (O); wherein the composition has a formula of (Na x K y )NbO 3-δ ; wherein 0≤x<1; wherein 0≤y<1; wherein 0<x+y<1; and wherein the composition satisfies at least one condition selected from a group consisting of a first condition of (x+y+4)/2≤(3−δ)≤(x+y+5)/2 and a second condition of 0<δ<1.
by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing · CPC title
Conductive materials · CPC title
by vapour phase deposition · CPC title
Titanates; Germanates; Molybdates; Tungstates · CPC title
Niobates; Vanadates; Tantalates · CPC title
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