Metal blocking pattern of display device and method of providing the same

Patent metadata

Field	Value
Publication number	US-12464931-B2
Application number	US-202217897783-A
Country	US
Kind code	B2
Filing date	Aug 29, 2022
Priority date	Nov 8, 2021
Publication date	Nov 4, 2025
Grant date	Nov 4, 2025

Abstract

A display device includes a blocking pattern between a display area and a dam structure and having an undercut shape. The blocking pattern includes an etched metal layer, and a first upper metal layer which is on the etched metal layer and has a width greater than a width of the etched metal layer.

First claim

What is claimed is:

1 . A display device comprising:
a substrate comprising:
a display area including a transistor; and
a non-display area adjacent to the display area along a plane of the substrate; and
the non-display area including:
a dam structure protruded from the substrate in a thickness direction of the substrate which crosses the plane of the substrate; and
a blocking pattern which is protruded from the substrate in the thickness direction, is between the transistor and the dam structure along the plane of the substrate, and has an undercut shape,
wherein the blocking pattern having the undercut shape comprises:
an etched metal layer spaced apart from the dam structure along the plane of the substrate and having a width along the plane of the substrate; and
a first upper metal layer on the etched metal layer, spaced apart from the dam structure along the plane of the substrate and having a width along the plane of the substrate which is greater than the width of the etched metal layer.

2 . The display device of claim 1 , wherein
the transistor includes:
an active pattern; and
a connecting electrode on the active pattern and contacting the active pattern, and
the blocking pattern in the non-display area is in a same layer as the connecting electrode in the display area.

3 . The display device of claim 1 , wherein the etched metal layer and the first upper metal layer include a metal.

4 . The display device of claim 3 , wherein the etched metal layer includes copper.

5 . The display device of claim 3 , wherein the first upper metal layer includes polycrystalline indium-tin-oxide.

6 . The display device of claim 1 , wherein the dam structure includes:
a lower dam structure including a first organic material; and an upper dam structure further from the substrate than the lower dam structure and including a second organic material.

7 . The display device of claim 6 , further comprising:
a first organic structure on the first upper metal layer, and in a same layer as the first organic material of the lower dam structure; and a second organic structure on the first organic structure, and in a same layer as the second organic material of the upper dam structure.

8 . The display device of claim 1 , further comprising:
a lower blocking pattern between the blocking pattern and the substrate, and the lower blocking pattern including:
a first lower metal layer having a width; and
a lower etched metal layer on the first lower metal layer, and having a width smaller than the width of the first upper metal layer.

9 . The display device of claim 8 , wherein
the transistor includes:
an active pattern;
a gate electrode on the active pattern; and
a connecting electrode on the gate electrode and contacting the active pattern,
the lower blocking pattern is in a same layer as the gate electrode, and the blocking pattern is in a same layer as the connecting electrode.

10 . The display device of claim 8 , wherein the etched metal layer of the blocking pattern and the lower etched metal layer of the lower metal pattern each includes copper.

11 . The display device of claim 1 , wherein the blocking pattern further includes a second upper metal layer between the first upper metal layer and the etched metal layer.

12 . The display device of claim 11 , wherein the second upper metal layer includes titanium.

13 . The display device of claim 1 , wherein within the non-display area, the blocking pattern is provided in plural including:
a first blocking pattern; and a second blocking pattern between the first blocking pattern and the dam structure.

14 . A display device comprising:
a substrate comprising:
a display area including a transistor; and
a non-display area adjacent to the display area in a plane of the substrate; and
the non-display area including:
a dam structure protruded from the substrate in a thickness direction of the substrate
which crosses the plane of the substrate; and
a blocking pattern which is protruded from the substrate in the thickness direction, is between the transistor and the dam structure along the plane of the substrate, and having an undercut shape,
wherein the blocking pattern having the undercut shape comprises:
an etched metal layer spaced apart from the dam structure along the plane of the substrate and having a width along the plane of the substrate; and
an upper insulating layer on the etched metal layer, spaced apart from the dam structure along the plane of the substrate and having a width along the plane of the substrate which is greater than the width of the etched metal layer.

15 . The display device of claim 14 , wherein
the transistor includes:
an active pattern;
a gate electrode on the active pattern; and
an interlayer insulating layer on the gate electrode, and covering the gate electrode,
the etched metal layer is in a same layer as the gate electrode, and the upper insulating layer is in a same layer as the interlayer insulating layer.

16 . A display device comprising:
a substrate comprising:
a display area including a transistor; and
a non-display area adjacent to the display area along a plane of the substrate; and
the non-display area including:
a dam structure protruded from the substrate in a thickness direction of the substrate which crosses the plane of the substrate; and
a blocking pattern which is protruded from the substrate in the thickness direction, is outside the dam structure along the plane of the substrate, and has an undercut shape, and
wherein the blocking pattern having the undercut shape comprises:
an etched metal layer spaced apart from the dam structure along the plane of the substrate and having a width; and
a first upper metal layer on the etched metal layer, spaced apart from the dam structure along the plane of the substrate and having a width along the plane of the substrate which is greater than the width of the etched metal layer.

17 . The display device of claim 16 , wherein
the transistor includes:
an active pattern; and
a connecting electrode on the active pattern and contacting the active pattern, and
the blocking pattern in the non-display area is in a same layer as the connecting electrode in the display area.

18 . The display device of claim 16 , wherein the etched metal layer and the first upper metal layer include a metal.

19 . The display device of claim 18 , wherein the etched metal layer includes copper.

20 . The display device of claim 18 , wherein the first upper metal layer includes polycrystalline indium-tin-oxide.

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Sunkwang
• Kang Ki Nyeng

Classifications

• H10K50/844

  Encapsulations · CPC title

• H10K50/865 Primary

  comprising light absorbing layers, e.g. light-blocking layers · CPC title

• H10K59/8792

  comprising light absorbing layers, e.g. black layers · CPC title

• H10K2102/103

  comprising indium oxides, e.g. ITO · CPC title

• H10K2102/102

  comprising tin oxides, e.g. fluorine-doped SnO2 · CPC title