Solar cell, method for manufacturing the same, photovoltaic module and photovoltaic system

Patent metadata

Field	Value
Publication number	US-12464850-B2
Application number	US-202418867574-A
Country	US
Kind code	B2
Filing date	May 31, 2024
Priority date	Mar 21, 2024
Publication date	Nov 4, 2025
Grant date	Nov 4, 2025

Abstract

The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system. The solar cell includes: a substrate ( 110 ), including a first surface (S 1 ) and a second surface (S 2 ) being opposite to each other, wherein the first surface (S 1 ) has a first region (A) and a second region (B) adjacent to each other in a first direction; a passivating contact layer ( 120 ), located in the first region (A) of the first surface (S 1 ); a polysilicon layer ( 130 ) located on at least a part of a surface of the passivating contact layer ( 120 ) away from the substrate ( 110 ); the passivating contact layer ( 120 ) including a first tunneling layer ( 121 ) and a first doped layer ( 122 ), the first tunneling layer ( 121 ) and the first doped layer ( 122 ) being sequentially stacked on the first region (A) of the first surface (S 1 ) of the substrate ( 110 ) in a direction away from the second surface (S 2 ); and a first passivation layer ( 140 ), located on a surface of the polysilicon layer ( 130 ) away from the passivating contact layer ( 120 ) and on the second region (B) of the first surface (S 1 ).

First claim

What is claimed is:

1 . A solar cell comprising:
a substrate, comprising a first surface and a second surface being opposite to each other; wherein the first surface has a first region and a second region adjacent to each other in a first direction; a passivating contact layer, located on the first region of the first surface; the passivating contact layer comprising a first tunneling layer and a first doped layer, wherein the first tunneling layer and the first doped layer are sequentially stacked on the first region of the first surface of the substrate in a direction away from the second surface, and the first doped layer is made of doped polysilicon; a polysilicon layer, located on at least a part of a surface of the passivating contact layer away from the substrate, the polysilicon layer being made of intrinsic polysilicon; a first passivation layer, located on a surface of the polysilicon layer away from the passivating contact layer and on the second region of the first surface; a second doped layer, located on a surface of the first passivation layer away from the polysilicon layer; a transparent conducting layer, located on a surface of the second doped layer away from the first doped layer; a first electrode located on the first region, extending from and passing through the transparent conducting layer to at least the polysilicon layer, wherein at least a part of the first electrode is in contact with at least one of the first doped layer and the polysilicon layer, and another part of the first electrode is in contact with the transparent conducting layer; and a second electrode located on the second region, wherein the second electrode is in contact with the transparent conducting layer.

2 . The solar cell according to claim 1 , wherein the first doped layer comprises an intrinsic portion and a doped diffusion portion, wherein the doped diffusion portion is located on a part of a surface of the first doped layer away from the first tunneling layer, and extends through the polysilicon layer along a direction from the substrate toward the first passivation layer; and the doped diffusion portion is in contact with the first electrode.

3 . The solar cell according to claim 1 , wherein the solar cell includes a partition groove, wherein the partition groove extends through at least the transparent conducting layer, and the partition groove is positioned between the first electrode and the second electrode in the first direction.

4 . The solar cell according to claim 3 , wherein a position of the partition groove is one of the following three situations:
the partition groove is positioned on the first region, the partition groove is positioned on the second region, and the partition groove extends across a boundary between the first region and the second region.

5 . The solar cell according to claim 1 , further comprising:
a second tunneling layer, located on a surface of the first doped layer away from the first tunneling layer and located between the first doped layer and the polysilicon layer.

6 . The solar cell according to claim 5 , wherein a region of the polysilicon layer adjacent to the second tunneling layer is a lightly doped region, wherein the lightly doped region and the first doped layer have a same doping type.

7 . The solar cell according to claim 6 , wherein a doping concentration in the doped region in the polysilicon layer decreases along a direction from the first tunneling layer toward the first passivation layer until the doping concentration is zero.

8 . The solar cell according to claim 1 , wherein the first doped layer comprises a doping element comprising at least one element of oxygen, carbon, or nitrogen.

9 . The solar cell according to claim 1 , wherein the second doped layer comprises a doping element comprising at least one element of oxygen, carbon, or nitrogen.

10 . The solar cell according to claim 1 , further comprising:
a first diffusion layer, located on the first region of the first surface and located between the substrate and the first tunneling layer.

11 . The solar cell according to claim 10 , wherein the first diffusion layer comprises a crystalline silicon base, wherein doping elements in the crystalline silicon base have the same doping conductivity type as doping elements in the first doped layer, and a doping concentration of the doping elements in the crystalline silicon base is less than or equal to a doping concentration of the doping elements in the first doped layer.

12 . The solar cell according to claim 1 , further comprising:
an insulating layer, located on a surface of the polysilicon layer away from the passivating contact layer and located between the polysilicon layer and the first passivation layer.

13 . The solar cell according to claim 1 , wherein the polysilicon layer comprises a doping element comprising at least one element of oxygen, carbon, or nitrogen.

14 . The solar cell according to claim 1 , wherein the polysilicon layer has a thickness ranging from 3 to 150 nanometers.

15 . The solar cell according to claim 10 , further comprising:
a second diffusion region located on the second surface of the substrate, wherein the second diffusion region comprises a crystalline silicon base.

16 . The solar cell according to claim 15 , wherein a doping concentration of the second diffusion region is greater than a doping concentration of doping elements in the substrate.

17 . The solar cell according to claim 1 , further comprising:
a passivation and anti-reflection layer located on the second surface of the substrate.

18 . The solar cell according to claim 17 , wherein the passivation and anti-reflection layer comprises a second passivation layer stacked on the second surface of the substrate, or comprises a second passivation layer and an anti-reflection layer stacked on the second surface of the substrate; wherein
the second passivation layer is made of a material comprising intrinsic amorphous silicon, doped amorphous silicon, silicon oxide, or aluminum oxide; the anti-reflection layer is made of a material comprising at least one of silicon nitride and silicon oxynitride.

19 . The solar cell according to claim 1 , wherein the first passivation layer is made of a material comprising intrinsic amorphous silicon, or the first passivation layer is made of a material doped with at least one element of oxygen, carbon, or nitrogen.

20 . A photovoltaic module, comprising at least one cell group, wherein the cell group comprises at least two solar cells according to claim 1 .

21 . A photovoltaic system comprising the photovoltaic module according to claim 20 .

Assignees

• Trina Solar Co Ltd

Inventors

• Yang Guangtao
• Chen Yifeng
• Chen Daming
• Hu Yunyun

Classifications

• H10F77/311 Primary

  for photovoltaic cells · CPC title

• H10F71/121

  The active layers comprising only Group IV materials · CPC title

• H10F77/219 Primary

  Arrangements for electrodes of back-contact photovoltaic cells · CPC title

• H10F10/165 Primary

  the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells · CPC title

• H10F10/174

  comprising monocrystalline or polycrystalline materials · CPC title