Doherty amplifier

Patent metadata

Field	Value
Publication number	US-12463607-B2
Application number	US-202318183766-A
Country	US
Kind code	B2
Filing date	Mar 14, 2023
Priority date	Mar 15, 2022
Publication date	Nov 4, 2025
Grant date	Nov 4, 2025

Abstract

Example embodiments relate to Doherty amplifiers. One example includes a radiofrequency (RF) power amplifier. The RF power amplifier includes an input lead. The RF power amplifier also includes a first output lead. Additionally, the RF power amplifier includes a first semiconductor die arranged in between the input lead and the first output lead. The first semiconductor die includes a first edge arranged adjacent to the input lead and an opposing second edge arranged adjacent to the first output lead. Further, the RF power amplifier includes a field-effect transistor integrated on the first semiconductor die. The field-effect transistor includes a gate bondpad assembly and a drain bondpad assembly. The field-effect transistor also includes a plurality of gate bondwires and a plurality of drain bondwires. In addition, the field-effect transistor includes a plurality of gate fingers extending in a first direction and a plurality of drain fingers extending in a second direction.

First claim

What is claimed is:

1 . A radiofrequency (RF) power amplifier, comprising:
an input lead; a first output lead; a first semiconductor die arranged in between the input lead and the first output lead and having:
a first edge arranged adjacent to the input lead; and
an opposing second edge arranged adjacent to the first output lead; and
a field-effect transistor integrated on the first semiconductor die and comprising:
a gate bondpad assembly;
a plurality of gate bondwires that directly or indirectly electrically connect the input lead to the gate bondpad assembly;
a drain bondpad assembly;
a plurality of drain bondwires that directly or indirectly electrically connect the first output lead to the drain bondpad assembly;
a plurality of gate fingers extending in a first direction from the gate bondpad assembly towards the drain bondpad assembly; and
a plurality of drain fingers extending in a second direction opposite to the first direction from the drain bondpad assembly towards the gate bondpad assembly,
wherein the gate bondpad assembly is arranged in between the first edge and the drain bondpad assembly, wherein the drain bondpad assembly is arranged in between the second edge and the gate bondpad assembly, wherein the field-effect transistor further comprises at least one auxiliary gate bondpad assembly, each auxiliary gate bondpad assembly being arranged spaced apart from the plurality of gate fingers in a respective direction perpendicular to the first direction, wherein each auxiliary gate bondpad assembly is arranged closer to the drain bondpad assembly than to the gate bondpad assembly when seen in the first direction, wherein each auxiliary gate bondpad assembly is electrically connected to the gate bondpad assembly, wherein the power amplifier further comprises, for each of the at least one auxiliary gate bondpad assembly, one or more bondwires that each have:
a first end that is physically and electrically connected to that auxiliary gate bondpad assembly; and
a second end that is configured to be RF grounded during operation.

2 . The RF power amplifier according to claim 1 ,
wherein the first semiconductor die comprises an upper surface at or near which the field-effect transistor is integrated, and wherein, for each of the at least one auxiliary gate bondpad assembly, an average direction in which the plurality of drain bondwires extend from the drain bondpad assembly taken in a plane parallel to the upper surface is at an angle with an average direction in which the one or more bondwires extend from that auxiliary bondpad assembly in said plane, said angle being in a range from −120 to +120 degrees.

3 . The RF power amplifier according to claim 2 , wherein said angle is in a range from −90 to +90 degrees.

4 . The RF power amplifier according to claim 1 ,
wherein each of the at least one auxiliary gate bondpad assembly is electrically connected to the gate bondpad assembly via the plurality of gate fingers, wherein the field-effect transistor comprises, for each of the at least one auxiliary gate bondpad assembly, a respective conductive track that physically connects that auxiliary gate bondpad assembly to the plurality of gate fingers, and wherein the position at which the conductive track connects to a gate finger corresponds to a position along that gate finger that falls within the last 50 percent of that gate finger, taking the gate bondpad assembly as a starting point of that gate finger.

5 . The RF power amplifier according to claim 1 , wherein at least one auxiliary gate bondpad assembly is arranged adjacent the drain bondpad assembly.

6 . The RF power amplifier according to claim 1 , further comprising a heat-conducting or electrically conductive substrate on which the first semiconductor die is mounted.

7 . The RF power amplifier according to claim 6 , further comprising a package body made of a solidified molding compound that fixes the input lead and the first output lead relative to the substrate.

8 . The RF power amplifier according to claim 6 , further comprising at least one DC blocking capacitor, each DC blocking capacitor having a first terminal that is configured to be electrically grounded during operation and a second terminal, wherein the second ends of the one or more bondwires for at least one auxiliary gate bondpad assembly are physically connected to the second terminal of a respective DC blocking capacitor among the at least one DC blocking capacitor.

9 . The RF power amplifier according to claim 8 , further comprising:
at least one second semiconductor die on which the at least one DC blocking capacitor is integrated; a third semiconductor die on which a matching capacitor is arranged that has a grounded first terminal and a second terminal, wherein the plurality of drain bondwires physically and electrically connect the drain bondpad assembly to the second terminal of the matching capacitor; and further drain bondwires that physically and electrically connect the second terminal to the first output lead.

10 . The RF power amplifier according to claim 9 , wherein the at least one further semiconductor die is at least partially arranged in between the third semiconductor die and the first semiconductor die.

11 . The RF power amplifier according to claim 9 , wherein at least one of the second semiconductor dies is the same die as the third semiconductor die.

12 . The RF power amplifier according to claim 8 , wherein the at least one DC blocking capacitor is electrically connected in between the gate bondpad assembly and the at least one auxiliary gate bondpad assembly.

13 . The RF power amplifier according to claim 1 , further comprising at least one second output lead, wherein, for at least one auxiliary gate bondpad assembly, the second ends of the one or more bondwires for that auxiliary gate bondpad assembly are physically connected to a second output lead of the at least one second output lead.

14 . A power amplifier system, comprising:
a printed circuit board; the RF power amplifier according to claim 13 mounted on the printed circuit board; and at least one DC blocking capacitor mounted on the printed circuit board and having a grounded terminal and a non-grounded terminal, wherein the non-grounded terminal of each DC blocking capacitor is electrically connected to a respective second output lead.

15 . The RF power amplifier according to claim 1 , wherein the at least one auxiliary gate bondpad assembly comprises a pair of auxiliary gate bondpad assemblies arranged on opposite sides of the plurality of gate bondwires.

16 . The RF power amplifier according to claim 1 , wherein the gate bondpad assembly, the drain bondpad assembly, or the at least one auxiliary gate bondpad assembly comprises at least one bondpad or a bondbar.

17 . The RF power amplifier according to claim 1 , wherein the field-effect transistor comprises a silicon-based laterally diffused metal-oxide semiconductor (LDMOS) or a Gallium Nitride-based field-effect transistor.

18 . A Doherty amplifier, comprising:
a Doherty splitter arranged for splitting an input RF signal into a main RF signal and a peak RF signal; a main amplifier for amplifying the main RF signal; a peak amplifier for amplifying the peak RF signal; and a Doherty combiner for combining the amplified main RF signal and the amplified peak RF signal into an output RF signal, wherein the main amplifier and the peak amplifier each comprises the RF power amplifier according to claim 1 .

Assignees

• Ampleon Netherlands Bv

Inventors

• Zhao Junlei
• Zhu Yi
• Gajadharsing Radjindrepersad

Classifications

• H10W44/234

  Arrangements for impedance matching · CPC title

• H10W44/231

  Arrangements for applying bias · CPC title

• H10W44/206

  Wires · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title