Memory management method, memory storage apparatus and memory control circuit unit

Patent metadata

Field	Value
Publication number	US-12461817-B2
Application number	US-202418625174-A
Country	US
Kind code	B2
Filing date	Apr 2, 2024
Priority date	Mar 13, 2024
Publication date	Nov 4, 2025
Grant date	Nov 4, 2025

Abstract

The present disclosure provides a memory management method, a memory storage apparatus and a memory control circuit unit. The method includes: performing a first operation on a plurality of physical units to obtain a quality estimation parameter corresponding to the physical units; establishing a check list according to the quality estimation parameter, wherein the check list records index information of a first physical unit among the physical units, and a number of the first physical unit is less than a total number of the physical units; and in response to a default condition being satisfied, performing a status scanning on the first physical unit according to the index information in the check list.

First claim

What is claimed is:

1 . A memory management method, which is adaptable for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, and the memory management method comprising:
performing a first operation, comprising at least one of a scan operation, a data read operation, and data decoding operation, on the physical units to obtain a quality estimation parameter corresponding to the physical units; obtaining index information of a first physical unit among the physical units and establishing a check list according to the quality estimation parameter, wherein the check list records the index information of the first physical unit and a number of the first physical unit is less than a total number of the physical units; and performing a status scanning on the first physical unit according to the index information in the check list, wherein a result of the status scanning reflects a current data storage quality of the first physical unit.

2 . The memory management method according to claim 1 , wherein the quality estimation parameter at least reflects at least one of a bit error rate and a wear degree of the first physical unit.

3 . The memory management method according to claim 1 , wherein the first physical unit comprises at least one physical unit with relatively poor data storage quality among the physical units.

4 . The memory management method according to claim 1 , further comprising:
recording, according to the quality estimation parameter, index information of at least one physical unit with data storage quality being lower than a quality threshold among the physical units into the check list.

5 . The memory management method according to claim 1 , wherein the step of establishing the check list according to the quality estimation parameter comprises:
sorting the physical units according to the quality estimation parameter; selecting the first physical unit from the physical unit according to a sorting result of the physical units; and recording the index information of the first physical unit into the check list.

6 . The memory management method according to claim 1 , further comprising:
in response to the quality estimation parameter being updated, updating the check list to add index information of a second physical unit among the physical units into the check list and remove index information of a third physical unit among the physical units from the check list.

7 . The memory management method according to claim 1 , further comprising:
in response to a memory storage apparatus comprising the rewritable non-volatile memory module being powered on or waked up, determining the default condition being satisfied.

8 . The memory management method according to claim 1 , further comprising:
performing a second operation according to the result of the status scanning, wherein the second operation comprises at least one of the following operations: adjusting a read voltage level corresponding to the first physical unit; adjusting a maintenance strategy for the physical units; and adjusting a quality threshold, wherein the quality threshold is configured to manage whether to record index information of a specific physical unit among the physical units into the check list.

9 . The memory management method according to claim 8 , wherein the step of adjusting the maintenance strategy for the physical units comprises:
adjusting a frequency of performing a full-disc scanning on the physical units according to the result of the status scanning.

10 . The memory management method according to claim 8 , wherein the step of performing the second operation according to the result of the status scanning comprises:
obtaining a representative information, wherein the representative information reflects an overall data storage quality of the physical units; and performing the second operation according to the representative information.

11 . A memory storage apparatus, comprising:
a connection interface unit coupled to a host system; a rewritable non-volatile memory module comprising a plurality of physical units; and a memory control circuit unit coupled to the connection interface unit and the rewritable non-volatile memory module, wherein the memory control circuit unit is configured to: perform a first operation, comprising at least one of a scan operation, a data read operation, and data decoding operation, on the physical units to obtain a quality estimation parameter corresponding to the physical units; obtain index information of a first physical unit among the physical units and establish a check list according to the quality estimation parameter, wherein the check list records the index information of the first physical unit, and a number of the first physical unit is less than a total number of the physical units; and perform a status scanning on the first physical unit according to the index information in the check list, wherein a result of the status scanning reflects a current data storage quality of the first physical unit.

12 . The memory storage apparatus according to claim 11 , wherein the quality estimation parameter at least reflects at least one of a bit error rate and a wear degree of the first physical unit.

13 . The memory storage apparatus according to claim 11 , wherein the first physical unit comprises at least one physical unit with relatively poor data storage quality among the physical units.

14 . The memory storage apparatus according to claim 11 , wherein the memory control circuit unit is further configured to:
record, according to the quality estimation parameter, index information of at least one physical unit with data storage quality being lower than a quality threshold among the physical units into the check list.

15 . The memory storage apparatus according to claim 11 , wherein the operation of establishing the check list according to the quality estimation parameter by the memory control circuit unit comprises:
sorting the physical units according to the quality estimation parameter; selecting the first physical unit from the physical unit according to a sorting result of the physical units; and recording the index information of the first physical unit into the check list.

16 . The memory storage apparatus according to claim 11 , wherein the memory control circuit unit is further configured to:
in response to the quality estimation parameter being updated, update the check list to add index information of a second physical unit among the physical units into the check list and remove index information of a third physical unit among the physical units from the check list.

17 . The memory storage apparatus according to claim 11 , wherein the memory control circuit unit is further configured to:
in response to the memory storage apparatus being powered on or waked up, determine the default condition being satisfied.

18 . The memory storage apparatus according to claim 11 , wherein the memory control circuit unit is further configured to:
perform a second operation according to the result of the status scanning, wherein the second operation comprises at least one of the following operations: adjusting a read voltage level corresponding to the first physical unit; adjusting a maintenance strategy for the physical units; and adjusting a quality threshold, wherein the quality threshold is configured to manage whether to record index information of a specific physical unit among

Assignees

• Phison Electronics Corp

Inventors

• Zeng Shih-Jia
• Tang chen yang
• Hsu Chen-An
• Wang Chih-Wei
• Lin Wei

Classifications

• G06F11/106 Primary

  Correcting systematically all correctable errors, i.e. scrubbing · CPC title

• G06F11/1068 Primary

  in sector programmable memories, e.g. flash disk (G06F11/1072 takes precedence) · CPC title