Acoustic resonator device

Patent metadata

Field	Value
Publication number	US-12458969-B2
Application number	US-202418612611-A
Country	US
Kind code	B2
Filing date	Mar 21, 2024
Priority date	May 6, 2019
Publication date	Nov 4, 2025
Grant date	Nov 4, 2025

Abstract

Methods of fabricating a bulk acoustic wave resonator structure for a fluidic device. The methods can include a first step of disposing a first conductive material over a portion of a first surface of a substrate to form at least a portion of a first electrode, the substrate having a second surface opposite the first surface. Then, a piezoelectric material may be disposed over the first electrode. Next, a second conductive material can be disposed over the piezoelectric material to form at least a portion of a second electrode. The second conductive material extends substantially parallel to the first surface of the substrate and the second conductive material at least partially extends over the first conductive material. The overlapping region of the first conductive material, the piezoelectric material, and the second conductive material form a bulk acoustic wave resonator, the bulk acoustic wave resonator having a first side and an opposing second side. An acoustic energy management structure is then disposed over a first side of the bulk acoustic wave resonator. Next a third conductive material is disposed over a portion of the second conductive material that extends beyond the bulk acoustic wave resonator, wherein the third conductive material forms an interconnect extending above the acoustic energy management structure in a direction substantially perpendicular to the first surface of the substrate. Finally a portion of the second surface of the substrate is removed to expose a chemical mechanical connection at the first electrode at a second side of the bulk wave acoustic resonator. Devices formed thereby are also included.

First claim

What is claimed is:

1 . A bulk acoustic wave resonator structure comprising:
a bulk acoustic wave resonator, wherein the bulk acoustic wave resonator comprises a first electrode disposed over a portion of a first surface of a substrate, a piezoelectric material disposed over the first electrode, and a second electrode disposed over the piezoelectric material, wherein an overlapping region of the first electrode, the piezoelectric material, and the second electrode forms the bulk acoustic wave resonator; an acoustic energy management structure disposed over a first side of the bulk acoustic wave resonator; and an interconnect disposed over a portion of the second electrode extending beyond the bulk acoustic wave resonator, wherein the interconnect extends above a height of the acoustic energy management structure in a direction substantially perpendicular to the first surface of the substrate.

2 . The bulk acoustic wave resonator structure of claim 1 , wherein the acoustic energy management structure comprises an air cavity comprising at least one wall and a roof comprising a photo imageable material.

3 . The bulk acoustic wave resonator structure of claim 2 , wherein the roof has an area in the range of 100 micrometers2 to 500,000 micrometers2.

4 . The bulk acoustic wave resonator structure of claim 2 , wherein the at least one wall and roof has a thickness in the range of 3 micrometers to 80 micrometers.

5 . The bulk acoustic wave resonator structure of claim 1 , wherein the acoustic energy management structure comprises an acoustic reflector.

6 . The bulk acoustic wave resonator structure of claim 5 , wherein the acoustic reflector comprises alternating layers of materials selected from: silicon oxicarbide [SiOC], silicon nitride [Si3N4], silicon dioxide [SiO2], aluminum nitride [AlN], tungsten [W], and molybdenum [Mo].

7 . The bulk acoustic wave resonator structure of claim 1 , further comprising a base electrically coupled to the interconnect, wherein the bulk acoustic wave resonator is arranged between the substrate and the base.

8 . The bulk acoustic wave resonator structure of claim 7 , wherein the bulk acoustic wave resonator structure comprises a plurality of bulk acoustic wave resonators, each of the plurality of bulk acoustic wave resonators comprising an associated acoustic energy management structure and an interconnect for independently electrically coupling each of the plurality of bulk acoustic wave resonators to the base.

9 . The bulk acoustic wave resonator structure of claim 8 , wherein the plurality of bulk acoustic wave resonators are arranged in a pattern of rows and columns along the substrate.

10 . The bulk acoustic wave resonator structure of claim 1 , wherein the piezoelectric material comprises a hexagonal crystal structure piezoelectric material that comprises a c-axis having an orientation distribution that is predominantly non-parallel to normal of a face of the substrate.

Assignees

• Qorvo Us Inc

Inventors

• Rivas Rio
• Mccarron Kevin
• Wasilik Matthew
• Doerr David

Classifications

• G01N29/2462

  Probes with waveguides, e.g. SAW devices · CPC title

• G01N2291/0426

  Bulk waves, e.g. quartz crystal microbalance, torsional waves · CPC title

• B01L2400/0436

  acoustic forces, e.g. surface acoustic waves [SAW] · CPC title

• G01N29/022

  Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices (microdevices per se B81B) · CPC title

• H03H3/02

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title