Thin film structure and electronic device including the same

Patent metadata

Field	Value
Publication number	US-12457792-B2
Application number	US-202418635385-A
Country	US
Kind code	B2
Filing date	Apr 15, 2024
Priority date	Sep 30, 2019
Publication date	Oct 28, 2025
Grant date	Oct 28, 2025

Abstract

Disclosed herein is a thin film structure, including a first conductive layer on a dielectric layer including a plurality of layers. Each of the plurality of layers includes a dopant layer containing a dopant A and a HfO2 layer to form a compound of HfxA1-xOz (0<x<1, z is a real number). An uppermost layer of the plurality of layers is thickest among the plurality of layers. The first conductive layer contacts the uppermost layer.

First claim

What is claimed is:

1. A thin film structure, comprising:
a dielectric layer including a plurality of layers to form a compound of Hf x Zr 1-x O z , the plurality of layers including a first layer, a second layer on the first layer, and an uppermost layer over the second layer, and
a first conductive layer on the dielectric layer, the first conductive layer directly contacting the uppermost layer of the plurality of layers in the dielectric layer, wherein
in the compound of Hf x Zr 1-x O z , 0<x<1, z is a real number,
the uppermost layer includes HfO 2 ,
none of the plurality of layers in the dielectric layer are thicker than the uppermost layer of the dielectric layer, the first layer includes HfO 2 and has a thickness of i*t (i is an integer, and t is a real number),
the second layer includes ZrO 2 and has a thickness of j*t (j is an integer and j>i), and
the uppermost layer has a thickness of k*t (k is and integer and k>i, j).

2. The thin film structure of claim 1 , wherein
t is 0.05 nm or more.

3. The thin film structure of claim 1 , wherein
pairs of the first layer and the second layer are repeatedly disposed under the uppermost layer.

4. The thin film structure of claim 3 , wherein
repeated number of the pairs of the first layer and second layer is R, and
k≤R*(j−i).

5. The thin film structure of claim 1 , wherein
the dielectric layer has a thickness of about 0.5 nm to about 20 nm.

6. The thin film structure of claim 1 , wherein
the first conductive layer includes any one of a metal, a conductive oxide, and graphene.

7. The thin film structure of claim 6 , wherein
the first conductive layer includes the metal.

8. The thin film structure of claim 6 , wherein
the first conductive layer includes the conductive oxide.

9. The thin film structure of claim 6 , wherein
the first conductive layer includes the graphene.

10. An electronic device, comprising:
a semiconductor layer; and
the thin film structure of claim 1 , on the semiconductor layer.

11. The electronic device of claim 10 , further comprising:
an insulating layer between the semiconductor layer and the thin film structure.

12. The electronic device of claim 11 , further comprising:
a second conductive layer between the insulating layer and the thin film structure.

13. An electronic device, comprising:
a second conductive layer; and
the thin film structure of claim 1 , on the second conductive layer.

14. The electronic device of claim 13 , further comprising:
an insulating layer between the second conductive layer and the thin film structure.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jo Sanghyun
• Heo Jinseong
• Lee Hyangsook
• Kim Sangwook
• Lee Yunseong

Classifications

• H10P14/69397

  the material containing two or more metal elements · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/6544

  to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer · CPC title

• H10P14/662

  Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title