Diamond field effect transistor and method for producing same

Patent metadata

Field	Value
Publication number	US-12457760-B2
Application number	US-202117910325-A
Country	US
Kind code	B2
Filing date	Feb 17, 2021
Priority date	Mar 10, 2020
Publication date	Oct 28, 2025
Grant date	Oct 28, 2025

Abstract

Provided are a diamond field effect transistor using a silicon oxide film as a gate insulating film including a silicon-terminated layer containing C—Si bonds in order to reduce an interface state density, and a method for producing the same. A FET 100 A includes a silicon oxide film 3 A formed on a surface of a non-doped diamond layer 2 A, a non-doped diamond layer 4 A formed on a surface of the non-doped diamond layer 2 A using the silicon oxide film 3 A as a mask, a silicon-terminated layer 5 A formed at an interface between the non-doped diamond layer 2 A and the silicon oxide film 3 A and at an interface between the non-doped diamond layer 4 A and the silicon oxide film 3 A, and a gate electrode 12 A formed on the silicon oxide film 3 A. The FET 100 A operates using the silicon oxide film 3 A and an insulating film 10 A formed on the silicon oxide film 3 A as a gate insulating film 11 A and using the non-doped diamond layer 4 A as each of a source region and a drain region.

First claim

The invention claimed is:

1. A diamond field effect transistor comprising:
a first diamond layer;
a gate insulating film including a silicon oxide film provided on a surface of the first diamond layer;
a source region and a drain region provided on the surface of the first diamond layer so as to be separated from each other; and
a gate electrode provided on the gate insulating film, wherein
a silicon-terminated layer containing C—Si bonds formed of bonds between carbon atoms and silicon atoms is provided at an interface between the first diamond layer and the gate insulating film;
wherein the source region and the drain region are second diamond layers formed in regions on the surface of the first diamond layer other than a region where the silicon oxide film is formed; and
wherein the diamond field effect transistor further comprises:
a source electrode and a drain electrode provided on surfaces of the second diamond layers in the source region and the drain region and respectively connected to the source region and the drain region at predetermined intervals from end portions of the source region and the drain region, wherein
a hydrogen-terminated layer containing C—H bonds formed of a bond between a carbon atom and a hydrogen atom is provided on the surface of the second diamond layer at least within the predetermined interval.

2. A method for producing a diamond field effect transistor, the method comprising:
forming a gate insulating film including a silicon oxide film on a surface of a first diamond layer;
forming a source region and a drain region on the surface of the first diamond layer;
forming a gate electrode on the gate insulating film; and
forming a silicon-terminated layer containing C—Si bonds formed of bonds between carbon atoms and silicon atoms at an interface between the first diamond layer and the silicon oxide film, wherein
forming the source region and the drain region on the surface of the first diamond layer includes removing a part of the silicon oxide film to expose a part of the surface of the first diamond layer, and selectively epitaxially growing a second diamond layer on the exposed surface of the first diamond layer, and
wherein the method further comprises:
forming a silicon-terminated layer including C—Si bonds formed of bonds between carbon atoms and silicon atoms at an interface between the second diamond layer and the silicon oxide film, wherein
forming the silicon-terminated layer containing the C—Si bonds at the interface between the first diamond layer and the silicon oxide film, forming the silicon-terminated layer containing the C—Si bonds at the interface between the second diamond layer and the silicon oxide film, and selectively epitaxially growing the second diamond layer on the exposed surface of the first diamond layer, are performed simultaneously by a plasma treatment in the same reducing atmosphere.

3. A method for producing a diamond field effect transistor, the method comprising:
forming a gate insulating film including a silicon oxide film on a surface of a first diamond layer;
forming a source region and a drain region on the surface of the first diamond layer;
forming a gate electrode on the gate insulating film; and
forming a silicon-terminated layer containing C—Si bonds formed of bonds between carbon atoms and silicon atoms at an interface between the first diamond layer and the silicon oxide film, wherein
forming the source region and the drain region on the surface of the first diamond layer includes removing a part of the silicon oxide film to expose a part of the surface of the first diamond layer, and selectively epitaxially growing a second diamond layer on the exposed surface of the first diamond layer, and
wherein the method further comprises:
forming a source electrode and a drain electrode on surfaces of the second diamond layers respectively connected thereto at predetermined intervals from end portions of the silicon oxide film, and forming a hydrogen-terminated layer containing C—H bonds formed of bonds between carbon atoms and hydrogen atoms on the surface of the second diamond layer at least within the predetermined interval.

Assignees

• Univ Waseda

Inventors

• Kawarada Hiroshi
• FEI Wenxi
• Bi Te
• IWATAKI Masayuki

Classifications

• H10P30/2044

  into semiconducting carbon, e.g. diamond or semiconducting diamond-like carbon · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10D64/01364

  the semiconductor being diamond, semiconducting diamond-like carbon or graphene · CPC title

• H10D62/8303

  Diamond · CPC title