High-frequency amplifier, radio communication device, and radar device

Patent metadata

Field	Value
Publication number	US-12456954-B2
Application number	US-202217882105-A
Country	US
Kind code	B2
Filing date	Aug 5, 2022
Priority date	Apr 3, 2020
Publication date	Oct 28, 2025
Grant date	Oct 28, 2025

Abstract

A high-frequency amplifier includes: a common-source transistor that has gate fingers, drain fingers, and source fingers, amplifies a signal applied to each of the gate fingers as a signal to be amplified, and outputs an amplified signal from each of the drain fingers; a common-gate transistor that has source fingers connected to the drain fingers of the common-source transistor, drain fingers, and gate fingers, and amplifies the amplified signal output from each of the drain fingers of the common-source transistor; a gate bus bar connected to the gate fingers of the common-gate transistor; and capacitors each having a first end connected to the gate bus bar and a second end grounded: wherein the capacitors are arranged at respective positions where impedances obtained by looking toward the respective capacitors from the respective gate fingers of the common-gate transistor are equal to each other.

First claim

The invention claimed is:

1. A high-frequency amplifier comprising:
a common-source transistor that has a plurality of gate fingers, a plurality of drain fingers, and a plurality of source fingers, amplifies a signal applied to each of the gate fingers as a signal to be amplified, and outputs an amplified signal from each of the drain fingers;
a common-gate transistor that has a plurality of source fingers connected to the drain fingers of the common-source transistor, a plurality of drain fingers, and a plurality of gate fingers, and amplifies the amplified signal output from each of the drain fingers of the common-source transistor;
a gate bus bar to be connected to the gate fingers of the common-gate transistor; and
a plurality of capacitors each having a first end connected to the gate bus bar and a second end grounded, wherein
the capacitors are arranged at respective positions where distances from the respective gate fingers of the common-gate transistor to the respective capacitors related to the respective gate fingers of the common-gate transistor are equal to each other, wherein impedances of the respective capacitors obtained at the respective gate fingers of the common-gate transistor are equal to each other,

each of the plurality of source fingers of the common-source transistor includes a source electrode with an individual source via (ISV) structure having a via hole,
each of the plurality of capacitors are provided on the source electrode of the respective source finger.

2. The high-frequency amplifier according to claim 1 , wherein the capacitors have respective capacitances in which amplification operations of the gate fingers of the common gate transistor are in phase with each other.

3. The high-frequency amplifier according to claim 1 , wherein the gate fingers of the common-source transistor, the drain fingers of the common-source transistor, and the source fingers of the common-source transistor are arranged in parallel with the source fingers of the common-gate transistor, the drain fingers of the common-gate transistor, and the gate fingers of the common-gate transistor.

4. A high-frequency amplifier comprising:
a common-source transistor that has a plurality of gate fingers, a plurality of drain fingers, and a plurality of source fingers, amplifies a signal applied to each of the gate fingers as a signal to be amplified, and outputs an amplified signal from each of the drain fingers;
a common-gate transistor that has a plurality of source fingers connected to the drain fingers of the common-source transistor, a plurality of drain fingers, and a plurality of gate fingers, and amplifies the amplified signal output from each of the drain fingers of the common-source transistor;
a gate bus bar to be connected to the gate fingers of the common-gate transistor; and
a plurality of capacitors each having a first end and a second end, the second end being grounded, wherein
the capacitors are arranged at respective positions where distances from the respective gate fingers of the common-gate transistor to the respective capacitors related to the respective gate fingers of the common-gate transistor are equal to each other, wherein impedances of the respective capacitors obtained at the respective gate fingers of the common-gate transistor are equal to each other,
each of the capacitors is disposed between a respective one of the gate fingers of the common-gate transistor and a respective one of the source fingers of the common-source transistor,
each of the source fingers of the common-source transistor is a source electrode with an individual source via (ISV) structure having a via hole,
each of the capacitors are provided on the respective source electrode,
the high-frequency amplifier further includes drain source fingers, which are fingers in which the drain fingers of the common-source transistor and the source fingers of the common-gate transistor are integrated, and
the gate fingers of the common-source transistor, the source fingers of the common-source transistor, the drain source fingers, the drain fingers of the common-gate transistor, and the gate fingers of the common-gate transistor are arranged in parallel with each other.

5. The high-frequency amplifier according to claim 1 , further comprising a plurality of shunt feedback capacitors having first ends connected to the respective drain fingers of the common-gate transistor and second ends connected to the respective drain fingers of the common source transistor.

6. A radio communication device comprising the high-frequency amplifier according to claim 1 .

7. A radar device comprising the high-frequency amplifier according to claim 1 .

Assignees

• Mitsubishi Electric Corp

Inventors

• Kamioka Jun
• Shinjo Shintaro

Classifications

• H10D84/813

  Combinations of field-effect devices and capacitor only · CPC title

• H10W20/2125

  Top-view shapes · CPC title

• H10W20/212

  Top-view shapes or dispositions, e.g. top-view layouts of the vias · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W20/496

  Capacitor integral with wiring layers · CPC title