Atomic layer deposition reactor comprising a top-loading reaction chamber configured to carry a batch of vertically oriented substrates

Patent metadata

Field	Value
Publication number	US-12454754-B2
Application number	US-201816009799-A
Country	US
Kind code	B2
Filing date	Jun 15, 2018
Priority date	May 27, 2008
Publication date	Oct 28, 2025
Grant date	Oct 28, 2025

Abstract

The invention relates to methods and apparatus in which precursor vapor is guided along at least one in-feed line into a reaction chamber of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates by establishing a vertical flow of precursor vapor in the reaction chamber and having it enter in a vertical direction in between said vertically placed substrates.

First claim

The invention claimed is:

1. An atomic layer deposition reactor, comprising:
a reaction chamber lid;
a top-load reaction chamber with a reaction space configured to receive a substrate holder, configured to carry a batch of vertical substrates placed next to each other in a parallel manner; and
at least one in-feed line, configured for feeding precursor vapor into the reaction space,
wherein the atomic layer deposition reactor is configured for depositing material simultaneously on all substrate surfaces by establishing a vertical top-to-bottom flow of precursor vapor through the entire reaction space such that the precursor vapor flows between said vertical substrates along each surface of each vertical substrate in essentially the same vertical, top-to-bottom direction,
wherein the reaction chamber lid comprises attachment parts configured to releasably suspend the substrate holder from the reaction chamber lid.

2. The atomic layer deposition reactor of claim 1 , wherein the batch of vertical substrates comprises at least two wafers.

3. The atomic layer deposition reactor of claim 1 , wherein the reaction chamber lid is configured to be separable from the top-load reaction chamber.

4. The atomic layer deposition reactor of claim 1 , wherein the precursor vapor is guided into the top-load reaction chamber through the reaction chamber lid.

5. The atomic layer deposition reactor of claim 1 , configured to receive the precursor vapor arriving from a horizontal direction, and to further guide the precursor vapor into the top-load reaction chamber in a vertical top-to-bottom direction.

6. The atomic layer deposition reactor of claim 1 further comprising an expansion volume configured to receive the precursor vapor entering thereinto and a distribution part configured to distribute the precursor vapor from the expansion volume into the top-load reaction chamber.

7. The atomic layer deposition reactor of claim 6 , configured to receive the precursor vapor, arriving from a horizontal direction, into the expansion volume, and to further guide the precursor vapor into the top-load reaction chamber, through the distribution part, in a vertical top-to-bottom direction.

8. The atomic layer deposition reactor of claim 1 , configured for depositing a thin film on the substrate surfaces by sequential self-saturating surface reactions.

9. The atomic layer deposition reactor of claim 1 , wherein the precursor vapor is guided into the top-load reaction chamber through a reactor chamber top flange.

10. The atomic layer deposition reactor of claim 1 , further comprising a vacuum chamber configured to accommodate the top-load reaction chamber and comprising a vacuum chamber lid integrated with the reaction chamber lid, thereby forming a lid system.

11. The atomic layer deposition reactor of claim 1 , wherein a bottom surface of the top-load reaction chamber is curved.

12. The atomic layer deposition reactor of claim 1 , further comprising the substrate holder.

13. A method, comprising:
obtaining the atomic layer deposition reactor according to claim 1 ;
obtaining the batch of vertical substrates placed next to each other in a parallel manner within the substrate holder;
loading the batch of vertical substrates into the reaction space by releasably suspending the substrate holder from the reaction chamber lid via the attachment parts;
feeding precursor vapor into the reaction space containing the batch of vertical substrates via the at least one in-feed line,
establishing vertical top-to-bottom flow of the precursor vapor through the entire reaction space such that precursor vapor flows between the vertical substrates along each surface of each vertical substrate in essentially the same vertical, top-to-bottom direction, thereby material is deposited on each surface of each vertical substrate.

14. The method of claim 13 , in which the precursor vapor is guided into the atomic layer deposition reactor such that the precursor vapor enters the atomic layer deposition reactor in a horizontal direction, and further enters the reaction space in a vertical top-to-bottom direction.

15. The method of claim 13 , in which the material is deposited simultaneously on all surfaces of each vertical substrate.

16. The method of claim 13 , in which the material is deposited on each vertical substrate by sequential self-saturating surface reactions.

Assignees

• Picosun Oy

Inventors

• Lindfors Sven

Classifications

• C30B29/20

  Aluminium oxides · CPC title

• C30B25/165

  the flow of the reactive gases · CPC title

• C23C16/45546

  specially adapted for a substrate stack in the ALD reactor · CPC title

• C23C16/45504

  Laminar flow · CPC title

• C23C16/403 Primary

  of aluminium, magnesium or beryllium · CPC title