Controlling detection time in photodetectors

Patent metadata

Field	Value
Publication number	US-12453205-B2
Application number	US-202418623707-A
Country	US
Kind code	B2
Filing date	Apr 1, 2024
Priority date	Jan 29, 2018
Publication date	Oct 21, 2025
Grant date	Oct 21, 2025

Abstract

Example embodiments relate to controlling detection time in photodetectors. An example embodiment includes a device. The device includes a substrate. The device also includes a photodetector coupled to the substrate. The photodetector is arranged to detect light emitted from a light source that irradiates a top surface of the device. A depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

First claim

What is claimed is:

1. A device comprising:
a substrate; and
a photodetector coupled to the substrate,
wherein the photodetector is arranged to detect light emitted from a light source, and
wherein a structure of a surface of the substrate mitigates dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

2. The device of claim 1 , wherein the structure of the surface of the substrate comprises a modification to a portion of the substrate applied during fabrication of the device.

3. The device of claim 1 , further comprising an additional photodetector coupled to the substrate,
wherein the additional photodetector is arranged to detect light emitted from the light source and is electrically connected in series with the photodetector.

4. The device of claim 1 , wherein the structure of the surface of the substrate comprises surface defects, and wherein the surface defects allow for recombination of electrons and holes so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

5. The device of claim 4 , wherein at least one of the surface defects comprises a topological defect, a defect where a translation symmetry of the surface is broken, an adsorbate, an interface with another material, an inconsistent grain boundary, a stacking fault, an antiphase boundary, or a dangling bond.

6. The device of claim 1 , further comprising a layer coupled to the surface of the substrate, wherein the layer mitigates dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source, and wherein the layer comprises a graded-index anti-reflective coating, a quarter-wave optical layer, a Bragg grating, a diffraction grating, or an index-matched, passive substrate.

7. The device of claim 1 , wherein a depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate.

8. The device of claim 1 , wherein the structure of the surface comprises surface roughness.

9. The device of claim 1 , wherein the surface is a top or a bottom surface of the substrate.

10. The device of claim 1 , wherein the surface is a side surface of the substrate.

11. A system comprising:
an emitter subsystem comprising a light source configured to emit light into an external environment; and
a receiver subsystem comprising:
a substrate; and
a photodetector coupled to the substrate,
wherein the photodetector is arranged to detect light emitted from the light source, and
wherein a structure of a surface of the substrate mitigates dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

12. The system of claim 11 , wherein the structure of the surface of the substrate comprises a modification to a portion of the substrate applied during fabrication of the receiver subsystem.

13. The system of claim 11 , further comprising an additional photodetector coupled to the substrate,
wherein the additional photodetector is arranged to detect light emitted from the light source and is electrically connected in series with the photodetector.

14. The system of claim 11 , wherein the structure of the surface of the substrate comprises surface defects, and wherein the surface defects allow for recombination of electrons and holes so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

15. The system of claim 14 , wherein at least one of the surface defects comprises a topological defect, a defect where a translation symmetry of the surface is broken, an adsorbate, an interface with another material, an inconsistent grain boundary, a stacking fault, an antiphase boundary, or a dangling bond.

16. The system of claim 11 , further comprising a layer coupled to the surface of the substrate, wherein the layer mitigates dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source, and wherein the layer comprises a graded-index anti-reflective coating, a quarter-wave optical layer, a Bragg grating, a diffraction grating, or an index-matched, passive substrate.

17. The system of claim 11 , wherein a depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate.

18. The system of claim 11 , wherein the structure of the surface comprises surface roughness.

19. The system of claim 11 , wherein the surface is a top or a bottom surface of the substrate.

20. A method comprising:
providing a device comprising:
a substrate; and
a photodetector coupled to the substrate,
wherein the photodetector is arranged to detect light emitted from a light source;

providing light from the light source; and
mitigating, by a structure of a surface of the substrate, dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

Assignees

• Waymo Llc

Inventors

• Onal Caner
• Verghese Simon
• Droz Pierre-Yves

Classifications

• H10F71/131

  Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors · CPC title

• H10F77/147

  Shapes of bodies · CPC title

• H10F39/103

  the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title

• H10F30/225 Primary

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title

• G01S17/89

  for mapping or imaging · CPC title