Surface acoustic wave wafer level packages with organic solderability preservative coating layers and manufacturing methods thereof

Patent metadata

Field	Value
Publication number	US-12451862-B2
Application number	US-202117348154-A
Country	US
Kind code	B2
Filing date	Jun 15, 2021
Priority date	Jul 6, 2020
Publication date	Oct 21, 2025
Grant date	Oct 21, 2025

Abstract

A surface acoustic wave wafer level package includes a substrate, an interdigital transducer (IDT) formed on the substrate, a sidewall formed on the substrate along a periphery of the IDT, a cover formed above the sidewall and the IDT to form a hollow above the IDT with the sidewall, a connection electrode formed on the substrate and extending outward from a periphery of the sidewall, a connection terminal electrically connected to a part of the connection electrode which extends outward from the periphery of the sidewall, and an organic solderability preservative coating layer formed on at least a top surface of the connection terminal.

First claim

What is claimed is:

1. A surface acoustic wave (SAW) wafer level package comprising:
a substrate;
an interdigital transducer (IDT) formed on the substrate;
a sidewall formed on the substrate along a periphery of the IDT;
a cover formed above the sidewall and the IDT to form a hollow above the IDT with the sidewall;
a connection electrode formed on the substrate, electrically connected to the IDT, and extending outward from a periphery of the sidewall;
a connection terminal electrically connected to a part of the connection electrode which extends outward from the periphery of the sidewall, formed throughout one outer side surface of the sidewall and one outer side surface of the cover and a part of a top surface of the cover, and having a top surface formed to be higher than the top surface of the cover; and
an organic solderability preservative (OSP) coating layer formed on the top surface and a side surface of the connection terminal,
wherein the OSP coating layer is formed along to the side surface of the connection terminal and the OSP coating layer directly contacts a part of the connection electrode extending outward from the periphery of the sidewall.

Assignees

• Wisol Co Ltd

Inventors

• Jang Suk Hwan
• Kim Byung Hak
• Lee Chang Yup

Classifications

• H03H3/08

  for the manufacture of resonators or networks using surface acoustic waves · CPC title

• H03H9/059

  consisting of mounting pads or bumps · CPC title

• H03H9/25

  Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)} · CPC title

• H03H9/1092 Primary

  the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's · CPC title

• H03H9/02535 Primary

  of surface acoustic wave devices · CPC title