Photodiode and photosensitive device
US-2020052142-A1 · Feb 13, 2020 · US
Mg2Si single crystal, Mg2Si single crystal substrate, infrared light receiving element and method for producing Mg2Si single crystal
US12448704B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12448704-B2 |
| Application number | US-202117420593-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 25, 2021 |
| Priority date | Sep 25, 2020 |
| Publication date | Oct 21, 2025 |
| Grant date | Oct 21, 2025 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Provided is a Mg 2 Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg 2 Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°.
First claim
Opening claim text (preview).
The invention claimed is: 1. A Mg 2 Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°, and the single crystal comprises at least one of B, Li, Al, P, and As as a dopant. 2. The Mg 2 Si single crystal according to claim 1 , wherein the variation in crystal orientation as measured by XRD is in a range of ±0.016°. 3. A Mg 2 Si single crystal substrate, comprising the Mg 2 Si single crys…
Assignees
Inventors
Classifications
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US12448704B2 cover?
- Provided is a Mg 2 Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg 2 Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°.
- Who is the assignee on this patent?
- Univ Ibaraki, Jx Nippon Mining & Metals Corp, Jx Advanced Metals Corp
- What technology area does this patent fall under?
- Primary CPC classification C30B29/52. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Oct 21 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).