Growth inhibitor for forming thin film, method for forming thin film and semiconductor substrate prepared therefrom

Patent metadata

Field	Value
Publication number	US-12448685-B2
Application number	US-202117512724-A
Country	US
Kind code	B2
Filing date	Oct 28, 2021
Priority date	Aug 29, 2019
Publication date	Oct 21, 2025
Grant date	Oct 21, 2025

Abstract

Disclosed are a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom. The growth inhibitor for forming a thin film is represented by Chemical Formula 1: AnBmXo [Chemical Formula 1]. A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. It is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

First claim

What is claimed is:

1. A method for forming a thin film comprising:
i) vaporizing a growth inhibitor for forming a thin film, injecting the growth inhibitor into an atomic layer deposition (ALD) chamber, and adsorbing the growth inhibitor on a surface of a substrate loaded in the atomic layer deposition (ALD) chamber;
ii) primary purging of an inside of the ALD chamber with a purge gas;
iii) vaporizing a thin film precursor compound and adsorbing the thin film precursor compound on the surface of the substrate loaded in the ALD chamber;
iv) secondary purging of the inside of the ALD chamber with a purge gas;
v) supplying a reaction gas into the ALD chamber; and
vi) tertiary purging of the inside of the ALD chamber with a purge gas, wherein a unit cycle comprises steps i) to vi) and is repeated to form the thin film,
wherein a ratio of the feeding amount (mg/cycle) between the growth inhibitor for forming a thin film and the precursor compound in the ALD chamber is 1:1.5 to 1:20,
wherein the growth inhibitor for forming a thin film is one or more selected from the group consisting of 1,1-dichloroethane, 1,2-dichloroethane, dichloromethane, 2-chloropropane, 1-chloropropane, 1,2-dichloropropane, 1,3-dichloropropane, 2,2-dichloropropane, 1 -chloropentane, 2-chloropentane, 3-chloropentane, chlorocyclopentane, n-butylchloride, tert-butyl chloride, sec-butyl chloride, isobutyl chloride, 1,2-dichlorobenzene, 1,4-dichlorobenzene, trimethylchlorosilane, trichloropropane, 2-chloro-2-methylbutane, and 2-methyl-1-pentane, and
wherein the feeding amount of the growth inhibitor is 0.5-50 mg/cycle.

2. The method for forming a thin film of claim 1 , wherein the growth inhibitor for forming a thin film and the thin film precursor compound are transferred into the ALD chamber by a vapor flow control (VFC) method.

3. The method for forming a thin film of claim 1 , wherein a reduction rate of a thin film growth rate per cycle (A/cycle) calculated by the following Equation 1 is-5% or less:
Reduction rate of thin film growth rate per cycle (%)=[(thin film growth rate per cycle when growth inhibitor for forming thin film is used-thin film growth rate per cycle when growth inhibitor for forming thin film is not used)/thin film growth rate per cycle when growth inhibitor for forming thin film is not usedπ×100.  [Equation 1]

4. The method for forming a thin film of claim 1 , wherein a residual halogen intensity (c/s) in the thin film formed after 200 cycles, which is measured based on Secondary Ion Mass Spectrometry, is 10,000 or less.

5. The method for forming a thin film of claim 1 , wherein the reaction gas is a reducing agent, a nitriding agent, or an oxidizing agent.

6. The method for forming a thin film of claim 1 , wherein a deposition temperature is in the range of 300 to 700° C., and a deposition pressure is in the range of 0.5 to 5 Torr.

Assignees

• Soulbrain Co Ltd

Inventors

• Yeon Changbong
• Jung Jaesun
• Byun Hyeran
• Song Taeho
• Kim Sojung
• Lee Seokjong

Classifications

• C07C201/00

  Preparation of esters of nitric or nitrous acid or of compounds containing nitro or nitroso groups bound to a carbon skeleton · CPC title

• C07C27/00

  Processes involving the simultaneous production of more than one class of oxygen-containing compounds · CPC title

• C07C17/00

  Preparation of halogenated hydrocarbons · CPC title

• C23C16/45595

  Atmospheric CVD gas inlets with no enclosed reaction chamber · CPC title

• C23C16/4408

  by purging residual gases from the reaction chamber or gas lines · CPC title