Etching compositions

Patent metadata

Field	Value
Publication number	US-12448568-B2
Application number	US-202318109298-A
Country	US
Kind code	B2
Filing date	Feb 14, 2023
Priority date	Mar 10, 2022
Publication date	Oct 21, 2025
Grant date	Oct 21, 2025

Abstract

The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

First claim

What is claimed is:

1. An etching composition, consisting of:
at least one quaternary ammonium hydroxide or a salt thereof;
at least one oxidizing agent;
at least one polyamine; and
water;
wherein the composition has a pH of at least about 13.

2. The composition of claim 1 , wherein the least one quaternary ammonium hydroxide or a salt thereof comprises a tetraalkylammonium hydroxide or a salt thereof.

3. The composition of claim 1 , wherein the least one quaternary ammonium hydroxide or a salt thereof comprises tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, benzyltrimethylammonium hydroxide, methyltriethylammonium hydroxide, ethyltrimethylammonium hydroxide, dimethyldiethylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide, tetraethanolammonium hydroxide, benzyltriethylammonium hydroxide, benzyltributylammonium hydroxide, hexadecyltrimethylammonium hydroxide, or a salt thereof.

4. The composition of claim 1 , wherein the at least one quaternary ammonium hydroxide or a salt thereof is in an amount of from about 0.1 wt % to about 20 wt % of the composition.

5. The composition of claim 1 , wherein the at least one oxidizing agent comprises periodic acid, perchloric acid, or hydrogen peroxide.

6. The composition of claim 1 , wherein the at least one oxidizing agent is in an amount of from about 0.01 wt % to about 5 wt % of the composition.

7. The composition of claim 1 , wherein the at least one polyamine comprises a diamine, a triamine, or an alkanolamine comprising at least two amino groups.

8. The composition of claim 1 , wherein the at least one polyamine comprises N-(3-aminopropyl)-diethanolamine or pentamethyldiethylenetriamine.

9. The composition of claim 1 , wherein the at least one polyamine is in an amount of from about 0.001 wt % to about 1 wt % of the composition.

10. The composition of claim 1 , wherein the water is in an amount of from about 70 wt % to about 99 wt % of the composition.

11. The composition of claim 1 , wherein the composition has a pH of at most about 14.

12. The composition of claim 1 , wherein the composition is substantially free of an organic solvent, a salt other than a quaternary ammonium salt, or a corrosion inhibitor.

13. A method, comprising:
contacting a semiconductor substrate supporting a Si-containing feature with a composition of claim 1 to substantially remove the Si-containing feature.

14. The method of claim 13 , wherein a pattern is formed on a surface of the semiconductor substrate and the Si-containing feature is a part of the pattern.

15. The method of claim 13 , wherein the method does not substantially remove SiN or SiOx.

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Dinega Dmitry
• Dory Thomas

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title

• C09K13/06 Primary

  with organic material · CPC title

• C09K13/00 Primary

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title

• H01L21/30604

  Electricity · mapped topic