Reconfigurable devices with multi-layer composite phase change materials

Patent metadata

Field	Value
Publication number	US-12446477-B1
Application number	US-202217858948-A
Country	US
Kind code	B1
Filing date	Jul 6, 2022
Priority date	Sep 7, 2021
Publication date	Oct 14, 2025
Grant date	Oct 14, 2025

Abstract

A device having: a multilayer composite phase change material structure with: a bottom PCM layer of a first SbTe PCM material having a first metallic doping; a first composite PCM layer on the bottom PCM layer, wherein the first composite PCM layer comprises at least: a first composite layer, comprising said first PCM material having a second metallic doping; and a second composite layer, comprising said first SbTe PCM material undoped, on the first composite layer; and a top PCM layer, comprising first SbTe PCM material having said first metallic doping, on the composite PCM layer. The first metallic doping can be identical to the second metallic doping. The first PCM material can comprise SbTe and the first and second metallic dopings can comprise one of Ge, In and GeIn.

First claim

What is claimed is:

1. A device having:
a multilayer composite phase change material structure comprising:
a bottom SbTe PCM layer of a first PCM material having a first metallic doping;
a first composite PCM layer on the bottom PCM layer, wherein the first composite PCM layer comprises at least:
a first composite layer, comprising said first PCM material having a second metallic doping; and
a second composite layer, comprising said first SbTe PCM material undoped, on the first composite layer; and

a top PCM layer, comprising first SbTe PCM material having said first metallic doping, on the composite PCM layer.

2. The device of claim 1 , wherein said first PCM material comprises SbTe and wherein said first and second metallic dopings comprise each one of Ge, In, and GeIn.

3. The device of claim 2 wherein:
the bottom PCM layer is a GeInSbTe layer that is 5-15 nm thick;
the top PCM layer is a GeInSbTe layer that is 5-15 nm thick;
the second composite layer is a SbTe layer that is 5-15 nm thick; and
the first composite layer is a GeInSbTe layer that is 5-15 nm thick.

4. The device of claim 1 wherein the first composite PCM layer comprises a superposition of n pairs comprising each said second composite layer on top of said first composite layer with metal-doped SbTe PCM and undoped SbTe PCM, wherein n is greater than one.

5. The device of claim 1 further comprising:
a first ohmic contact on a first end of the multilayer composite phase change material structure;
a second ohmic contact on a second end of the multilayer composite phase change material structure;
a substrate; and
a heater on the substrate and coupled to the multilayer composite phase change material structure.

6. The device of claim 5 wherein the heater comprises TiW.

7. The device of claim 5 further comprising:
a thermal dielectric layer between the heater and the multilayer composite phase change material (PCM);
wherein the thermal dielectric layer comprises SiNx, AlN, diamond, or SiC.

8. The device of claim 5 further comprising:
a thermal barrier coupled between the heater and the substrate;
wherein the thermal barrier comprises SiO 2 .

9. The device of claim 5 :
having a dielectric on the substrate and surrounding the heater; and
wherein the dielectric is configured so that the multilayer composite phase change material structure is planar.

10. The device of claim 5 wherein the substrate comprises:
high-resistance Si, sapphire, borofloat, quartz, or fused silica.

11. The device of claim 5 further comprising:
an encapsulating layer partially covering the first ohmic contact and the second ohmic contact, and covering a top of the top PCM layer between the first ohmic contact and the second ohmic contact;
wherein the encapsulating layer comprises SiNx.

12. A method of providing a phase change material structure, the method comprising:
forming a bottom PCM layer by sputtering a first SbTe PCM material having a first metallic doping in an amorphous phase;
forming a composite phase change material layer on the bottom PCM layer, wherein the first composite phase change material layer comprises at least:
a first composite layer, formed by sputtering said first PCM material having a second metallic doping in an amorphous phase; and
a second composite layer, formed by sputtering said first SbTe PCM material, undoped, in an amorphous phase on the first composite layer; and

forming a top SbTe PCM layer layer on the composite PCM layer by sputtering said first PCM material having said first metallic dopingin an amorphous phase.

13. The method of claim 12 , wherein said first PCM material comprises SbTe and wherein said first and second metallic dopings comprise each one of Ge, In, and GeIn.

14. The method of claim 13 , further comprising:
forming a first ohmic contact on a first end of the multilayer composite phase change material structure; and
forming a second ohmic contact on a second end of the multilayer composite phase change material structure
providing a substrate; and
providing a heater on the substrate, wherein the heater is coupled to the multilayer composite phase change material sructure.

15. The method of claim 12 , wherein the first composite PCM layer comprises a superposition of n pairs of SbTe-based doped and undoped PCM comprising each said second composite layer on top of said first composite layer, wherein n is greater than one.

Assignees

• Hrl Lab Llc

Inventors

• Moon Jeong-Sun
• Seo Hwa Chang
• Son Kyung-Ah

Classifications

• H10N70/8825

  Selenides, e.g. GeSe · CPC title

• H10N70/823

  adapted for essentially horizontal current flow, e.g. bridge type devices · CPC title

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title

• H10N70/231 Primary

  based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect · CPC title

• H10N70/041

  Modification of switching materials after formation, e.g. doping (shaping H10N70/061) · CPC title