Method of manufacturing a display apparatus

US12446435B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12446435-B2
Application numberUS-202318342091-A
CountryUS
Kind codeB2
Filing dateJun 27, 2023
Priority dateSep 27, 2019
Publication dateOct 14, 2025
Grant dateOct 14, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A display apparatus includes a buffer layer on a substrate, a first hole penetrating the buffer layer and exposing a portion of the substrate, a display layer with display elements and bypass lines on the buffer layer, a second hole penetrating the display layer and connected to the first hole, and an encapsulation member covering the display elements and the bypass lines. The bypass lines are configured to extend along a portion of a perimeter of the second hole and are disposed between the second hole and the display elements. At least a portion of an upper surface of the buffer layer is exposed by the second hole.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of manufacturing a display apparatus, the method comprising: forming a buffer layer on a substrate; forming a first hole penetrating the buffer layer and exposing a portion of the substrate; forming a display layer on the buffer layer, the display layer comprising display elements and bypass lines; forming a second hole penetrating the display layer, wherein the second hole is connected to the first hole and concentric thereto; and forming an encapsulation member to cover the display layer, wherein at least a portion of an upper surface of the buffer layer is exposed by the second hole, and wherein the first hole is formed after the second hole is formed. 2. The method of claim 1 , wherein a first width of the first hole is less than a second width of the second hole. 3. The method of claim 1 , wherein the display layer comprises a first inorganic insulating layer and a first organic insulating layer, wherein the forming of the second hole comprises: forming a third hole penetrating the first inorganic insulating layer; and forming a fourth hole penetrating the first organic insulating layer, wherein each of the third hole and the fourth hole is concentric to the first hole, and wherein at least a portion of an upper surface of the first inorganic insulating layer is exposed by the fourth hole. 4. The method of claim 3 , wherein the first hole is formed after the third hole is formed. 5. The method of claim 3 , wherein the fourth hole is formed after the third hole is formed. 6. The method of claim 3 , wherein the forming of the display layer comprises: forming a semiconductor layer on the buffer layer; forming the first inorganic insulating layer on the semiconductor layer; forming a first contact hole in the first inorganic insulating layer to expose the semiconductor layer, wherein the forming of the first contact hole and the forming of the third hole are simultaneously performed. 7. The method of claim 6 , wherein the forming of the display layer comprises: forming a source electrode or a drain electrode connected to the semiconductor layer through the first contact hole; forming the first organic insulating layer on the source electrode or the drain electrode; and forming a second contact hole in the first organic insulating layer to expose the source electrode or the drain electrode, wherein the forming of the second contact hole and the forming of the fourth hole are simultaneously performed. 8. The method of claim 1 , further comprising: forming a metal layer and an input sensing section on the encapsulation member to overlap the bypass lines, wherein the input sensing section comprising a sensing electrode and an insulating layer; forming a metal hole penetrating the metal layer, wherein the sensing electrode is on a first surface of the insulating layer, and wherein the metal layer is on a second surface, opposite to the first surface, of the insulating layer and electrically insulated from the sensing electrode, a width of the first hole is less than a width of the metal hole. 9. The method of claim 1 , further comprising: forming a filler between the substrate and the encapsulation member and filling the first hole and the second hole. 10. The method of claim 9 , forming a spacer with an opening between the display layer and the encapsulation member, wherein the forming of the filler further includes filling the opening of the spacer. 11. The method of claim 1 , wherein the forming of the first hole is performed such that the first hole is closed off at a bottom thereof by the portion of the substrate. 12. A method of manufacturing an electronic device, the method comprising: forming a buffer layer on a substrate; forming a first hole penetrating the buffer layer and exposing a portion of the substrate; forming a display layer on the buffer layer, the display layer comprising display elements and bypass lines; forming a second hole penetrating the display layer, wherein the second hole is connected to the first hole and concentric thereto; and forming an encapsulation member to cover the display layer, wherein at least a portion of an upper surface of the buffer layer is exposed by the second hole, and wherein the first hole is formed after the second hole is formed. 13. The method of claim 12 , wherein a first width of the first hole is less than a second width of the second hole. 14. The method of claim 12 , wherein the display layer comprises a first inorganic insulating layer and a first organic insulating layer, wherein the forming of the second hole comprises: forming a third hole penetrating the first inorganic insulating layer; and forming a fourth hole penetrating the first organic insulating layer, wherein each of the third hole and the fourth hole is concentric to the first hole, and wherein at least a portion of an upper surface of the first inorganic insulating layer is exposed by the fourth hole. 15. The method of claim 14 , wherein the first hole is formed after the third hole is formed. 16. The method of claim 14 , wherein the fourth hole is formed after the third hole is formed. 17. The method of claim 14 , wherein the forming of the display layer comprises: forming a semiconductor layer on the buffer layer; forming the first inorganic insulating layer on the semiconductor layer; forming a first contact hole in the first inorganic insulating layer to expose the semiconductor layer, wherein the forming of the first contact hole and the forming of the third hole are simultaneously performed. 18. The method of claim 17 , wherein the forming of the display layer comprises: forming a source electrode or a drain electrode connected to the semiconductor layer through the first contact hole; forming the first organic insulating layer on the source electrode or the drain electrode; and forming a second contact hole in the first organic insulating layer to expose the source electrode or the drain electrode, wherein the forming of the second contact hole and the forming of the fourth hole are simultaneously performed. 19. The method of claim 12 , further comprising: forming a metal layer and an input sensing section on the encapsulation member to overlap the bypass lines, wherein the input sensing section comprising a sensing electrode and an insulating layer; forming a metal hole penetrating the metal layer, wherein the sensing electrode is on a first surface of the insulating layer, and wherein the metal layer is on a second surface, opposite to the first surface, of the insulating layer and electrically insulated from the sensing electrode, a width of the first hole is less than a width of the metal hole. 20. The method of claim 12 , further comprising: forming a filler between the substrate and the encapsulation member and filling the first hole and the second hole.

Assignees

Inventors

Classifications

  • Substrates, e.g. flexible substrates · CPC title

  • Encapsulations · CPC title

  • Vertical spacers, e.g. arranged between the sealing arrangement and the OLED · CPC title

  • Peripheral sealing arrangements, e.g. adhesives, sealants · CPC title

  • characterised by the geometry or disposition of pixel elements · CPC title

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What does patent US12446435B2 cover?
A display apparatus includes a buffer layer on a substrate, a first hole penetrating the buffer layer and exposing a portion of the substrate, a display layer with display elements and bypass lines on the buffer layer, a second hole penetrating the display layer and connected to the first hole, and an encapsulation member covering the display elements and the bypass lines. The bypass lines are …
Who is the assignee on this patent?
Samsung Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10K59/40. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 14 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).