We claim:
1. An anode material, comprising a silicon composite substrate, wherein in an X-ray diffraction pattern of the anode material, the highest intensity at 2θ within the range of 28.0° to 29.0° is I 2 , and the highest intensity at 2θ within the range of 20.5° to 21.5° is I 1 , wherein 0<I 2 /I 1 ≤1, wherein the Dv50 of the silicon composite substrate is from 2.5 μm to 10 μm, and a particle size distribution of the silicon composite substrate meets: 0.3≤Dn10/Dv50≤0.6.
2. The anode material according to claim 1 , wherein the silicon composite substrate comprises SiO x , wherein 0.6≤x≤1.5.
3. The anode material according to claim 1 , wherein the silicon composite substrate comprises nano-Si crystalline grains, SiO, SiO 2 , or any combination thereof.
4. The anode material according to claim 1 , wherein the silicon composite substrate comprises nano-Si crystalline grains and the nano-Si crystalline grains have a size of less than 100 nm.
5. The anode material according to claim 1 , further comprising an oxide MeO y layer, wherein the oxide MeO y layer is coated on at least a portion of the silicon composite substrate, wherein Me comprises at least one of Al, Si, Ti, Mn, V, Cr, Co or Zr, and y is 0.5 to 3; wherein the oxide MeO y layer comprises a carbon material.
6. The anode material according to claim 5 , wherein a thickness of the oxide MeO y layer is 0.5 nm to 100 nm.
7. The anode material according to claim 5 , wherein based on the total weight of the anode material, a weight percentage of the Me element is 0.005 wt % to 1 wt %.
8. The anode material according to claim 5 , wherein a weight percentage of the carbon material of the oxide MeO y layer is 0.01 wt % to 1 wt % based on the total weight of the anode material.
9. The anode material according to claim 5 , further comprising a polymer layer, wherein the polymer layer is coated on at least a portion of the oxide MeO y layer, wherein the polymer layer comprises a carbon material.
10. The anode material according to claim 9 , wherein the polymer layer comprises polyvinylidene fluoride and its derivatives, carboxymethyl cellulose and its derivatives, sodium carboxymethyl cellulose and its derivatives, polyvinylpyrrolidone and its derivatives, polyacrylic acid and its derivatives, polystyrene-butadiene rubber, polyacrylamide, polyimide, polyamideimide or any combination thereof.
11. The anode material according to claim 5 , wherein the carbon material comprises carbon nanotubes, carbon nanoparticles, carbon fibers, graphene, or any combination thereof.
12. The anode material according to claim 9 , wherein based on the total weight of the anode material, a weight percentage of the polymer layer is 0.05 wt % to 5 wt %.
13. The anode material according to claim 9 , wherein a thickness of the polymer layer is 1 nm to 500 nm.
14. The anode material according to claim 1 , wherein the anode material has a specific surface area of about 10 to 30 m 2 /g.
15. A method for preparing the anode material according to claim 1 , comprising:
mixing silicon dioxide and a metal silicon powder at a molar ratio of 1:5 to 5:1 to obtain a mixed material;
heating the mixed material at a temperature range of 1100 to 1550° C. under 10 −4 to 10 −1 kPa for 0.5 to 24 hr to obtain a gas;
condensing the obtained gas to obtain a solid;
crushing and screening the solid; and
heat-treating the solid at a temperature range from 400° C. to 1200° C. for 1 to 24 hr, and cooling the heat-treated solid to obtain an anode active material.
16. An anode, comprising an anode material, the anode material comprises a silicon composite substrate, wherein in an X-ray diffraction pattern of the anode material, the highest intensity at 2θ within the range of 28.0° to 29.0° is I 2 , and the highest intensity at 2θ within the range of 20.5° to 21.5° is I 1 , wherein 0<I 2 /I 1 ≤1, wherein the Dv50 of the silicon composite substrate is from 2.5 μm to 10 μm, and a particle size distribution of the silicon composite substrate meets: 0.3≤Dn10/Dv50≤0.6.
17. An electrochemical device, comprising the anode according to claim 16 .
18. An electronic device, comprising the electrochemical device according to claim 17 .