Data writing method and storage device

Patent metadata

Field	Value
Publication number	US-12443371-B2
Application number	US-202318529831-A
Country	US
Kind code	B2
Filing date	Dec 5, 2023
Priority date	Oct 25, 2017
Publication date	Oct 14, 2025
Grant date	Oct 14, 2025

Abstract

A data writing method includes: receiving a write command, where the write command carries a type of to-be-written data; determining, based on the type of to-be-written data, a type of storage area that is in an SSD and into which the to-be-written data is written, where the SSD includes a plurality of types of storage areas; determining, based on the type of storage area, a target storage area into which the to-be-written data is written; and writing the to-be-written data into the target storage area. In embodiments of this application, data processing efficiency can be improved.

First claim

What is claimed is:

1. A method implemented by a solid-state device (SSD) and comprising:
receiving data to be written into the SSD, wherein the SSD comprises storage areas of different storage types, wherein the different storage types correspond to different performances, and wherein the storage areas comprise a first storage area of a first storage type, a single-level cell (SLC) area, and a quad-level cell (QLC) area; and
writing the data into the first storage area based on a data type of the data, a storage type corresponding to the data type, and a correspondence between the data type and the first storage type.

2. The method of claim 1 , wherein the performances are related to a reading speed, a writing speed, an erasing speed, a quantity of program cycles, a quantity of erase cycles, a cost, a density, or an operating current.

3. The method of claim 1 , wherein the storage areas further comprise storage blocks of different block types, and wherein the correspondence is further between the data type and a first block type of the first storage area.

4. The method of claim 3 , wherein the storage areas further comprise a multi-level cell (MLC) area and a triple-level cell (TLC) area, wherein first performances of the SLC areas are greater than a second performance of the MLC area, wherein the second performance is greater than a third performance of the TLC area, and wherein the third performance is greater than a fourth performance of the QLC area.

5. The method of claim 3 , further comprising converting, when there is no idle storage page in the first storage area, at least one block comprising an idle storage page in a second storage area of a second storage type to the first storage type, wherein a second performance of the second storage area is lower than a first performance of the first storage area.

6. The method of claim 1 , wherein the SSD further comprises storage blocks, wherein the storage blocks comprise storage pages of different storage page types, and wherein the correspondence is further between the data type and a first storage page type of the storage page types.

7. The method of claim 6 , further comprising:
when there is an available storage page in the first storage area, determining the available storage page as a target storage area; or
when there is no available storage page in the first storage area, obtaining an idle storage block in the SSD and determining a first storage page in the idle storage block as the target storage area.

8. The method of claim 6 , wherein the storage pages comprise least significant bit (LSB) pages, a central significant bit (CSB) page, and a most significant bit (MSB) page, wherein a first performance of the LSB pages is greater than a second performance of the CSB page, wherein the second performance is greater than a third performance of the MSB page, and wherein the method further comprises determining, when a storage area of the first storage type is the MSB page or the CSB page and when there is no available storage page in the storage area, as a target storage area at least one available storage page having a higher performance than the storage area in the first storage type.

9. The method of claim 1 , further comprising receiving a write request or a write command defined by a Non-Volatile Memory Express (NVMe) control protocol.

10. A solid-state device (SSD) comprising:
a storage medium comprising storage areas of different storage types, wherein the different storage types correspond to different performances, and wherein the storage areas comprise a first storage area of a first storage type, a single-level cell (SLC) area, and a quad-level cell (QLC) area; and
a controller coupled to the storage medium and configured to:
receive data to be written into the SSD; and
write the data into the first storage area based on a data type of the data, a storage type corresponding to the data type, and a correspondence between the data type and the first storage type.

11. The SSD of claim 10 , wherein the performances are related to a reading speed, a writing speed, an erasing speed, a quantity of program cycles, a quantity of erase cycles, a cost, a density, or an operating current.

12. The SSD of claim 10 , wherein the storage areas further comprise storage blocks of different block types, and wherein the correspondence is further between the data type and a first block type of the first storage area.

13. The SSD of claim 12 , wherein the storage areas further comprise a multi-level cell (MLC) area and a triple-level cell (TLC) area, wherein first performances of the SLC areas are greater than a second performance of the MLC area, wherein the second performance is greater than a third performance of the TLC area, and wherein the third performance is greater than a fourth performance of the QLC area.

14. The SSD of claim 12 , wherein the controller is further configured to convert, when there is no idle storage page in the first storage area, at least one block comprising an idle storage page in a second storage area of a second storage type to the first storage type, and wherein a second performance of the second storage area is lower than a first performance of the first storage area.

15. The SSD of claim 10 , wherein the storage medium further comprises storage blocks, wherein the storage blocks comprise storage pages of different storage page types, and wherein the correspondence is further between the data type and a first storage page type of the storage page types.

16. A storage system comprising:
a host configured to send data to be written; and
a solid-state device (SSD) coupled to the host and comprising storage areas of different storage types, wherein the different storage types correspond to different performances, and wherein the storage areas comprise a first storage area of a first storage type, a single-level cell (SLC) area, and a quad-level cell (QLC) area, and wherein the SSD is configured to:
receive the data from the host; and
write the data into the first storage area based on a data type of the data, a storage type corresponding to the data type, and a correspondence between the data type and the first storage type.

17. The storage system of claim 16 , wherein the performances are related to a reading speed, a writing speed, an erasing speed, a quantity of program cycles, a quantity of erase cycles, a cost, a density, or an operating current.

18. The storage system of claim 16 , wherein the storage areas further comprise storage blocks of different block types, and wherein the correspondence is further between the data type and a first block type of the first storage area.

19. The storage system of claim 18 , wherein the SSD is further configured to convert, when there is no idle storage page in the first storage area, at least one block comprising an idle storage page in a second storage area of a second storage type to the first storage type, and wherein a second performance of the second storage area is lower than a first performance of the first storage area.

20. The storage system of claim 16 , wherein the SSD further comprises storage blocks, wherein the storage blocks comprise storage pages of different storage page types, and wherein the correspondence is further between the data type and a first storage page type of the storage page types.

21. The method of claim 4 , wherein the first storage area is the SLC area, the QLC area, the MLC area, or the TLC area.

22. The storage system o

Assignees

• Huawei Tech Co Ltd

Inventors

• Zhou Meng
• Zhou Jianhua

Classifications

• H10D30/68

  Floating-gate IGFETs · CPC title

• G11C16/10

  Programming or data input circuits · CPC title

• G11C16/0483

  comprising cells having several storage transistors connected in series · CPC title

• G11C11/5628

  Programming or writing circuits; Data input circuits · CPC title

• G06F3/0673

  Single storage device · CPC title