Treatment liquid and substrate washing method

Patent metadata

Field	Value
Publication number	US-12441965-B2
Application number	US-202318158544-A
Country	US
Kind code	B2
Filing date	Jan 24, 2023
Priority date	Jul 30, 2020
Publication date	Oct 14, 2025
Grant date	Oct 14, 2025

Abstract

An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid.
The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

First claim

What is claimed is:

1. A treatment liquid for a semiconductor device, comprising:
water;
a basic compound;
hexylene glycol; and
a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

2. The treatment liquid according to claim 1 ,
wherein in a case where the treatment liquid comprises one kind of the compound A, a content of the compound A with respect to a total mass of the treatment liquid is 1,000 ppm by mass or less, and
in a case where the treatment liquid comprises two or more kinds of the compounds A, a content of each of the compounds A with respect to the total mass of the treatment liquid is 1,000 ppm by mass or less.

3. The treatment liquid according to claim 1 ,
wherein the treatment liquid comprises two or more kinds of the compounds A, and
in the treatment liquid, in a case where a content of a compound having a highest content among the compounds A is denoted by α and a content of a compound having a second highest content among the compounds A is denoted by β, a ratio α/β of the content α to the content β is less than 10 in terms of mass ratio.

4. The treatment liquid according to claim 1 ,
wherein the treatment liquid comprises three or more kinds of the compounds A, and
in the treatment liquid, in a case where a content of a compound having a second highest content among the compounds A is denoted by β and a content of a compound having a third highest content among the compounds A is denoted by γ, a ratio β/γ of the content β to the content γ is less than 10 in terms of mass ratio.

5. The treatment liquid according to claim 1 ,
wherein the treatment liquid comprises at least one kind selected from the group consisting of isobutene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, and 4-methyl-3-penten-2-ol.

6. The treatment liquid according to claim 1 ,
wherein a content of the hexylene glycol in the treatment liquid is 60% by mass or more with respect to a total mass of the treatment liquid.

7. The treatment liquid according to claim 1 ,
wherein the basic compound comprises at least one selected from the group consisting of tetramethylammonium hydroxide, monoethanolamine, and hydroxylamine.

8. The treatment liquid according to claim 1 ,
wherein the basic compound comprises a compound B represented by Formula (1),
NH 2 —CH 2 CH 2 —X—CH 2 CH 2 —Y  (1)

in Formula (1), X represents —NR— or —O—, R represents a hydrogen atom or a substituent, and Y represents a hydroxy group or a primary amino group.

9. The treatment liquid according to claim 8 ,
wherein the compound B comprises at least one selected from the group consisting of 2-(2-aminoethylamino)ethanol, 2,2′-oxybis(ethylamine), and 2-(2-aminoethoxy)ethanol.

10. The treatment liquid according to claim 8 ,
wherein a content of the compound B with respect to a total mass of the treatment liquid is 0.1% to 1.15% by mass.

11. The treatment liquid according to claim 1 ,
wherein the basic compound comprises two or more kinds of amine compounds.

12. The treatment liquid according to claim 11 ,
wherein in the treatment liquid, a ratio of a content of a compound having a highest content among the amine compounds to a content of an amine compound having a lowest content among the amine compounds is 9 to 100 in terms of mass ratio.

13. The treatment liquid according to claim 1 ,
wherein the treatment liquid is used as a washing solution for removing etching residues from a substrate including a metal-containing layer or as a washing solution for removing residues from a substrate after chemical mechanical polishing.

14. A substrate washing method comprising a washing step of washing a substrate comprises a metal-containing layer, by contacting the substrate with the treatment liquid according to claim 1 .

15. The treatment liquid according to claim 2 ,
wherein the treatment liquid comprises two or more kinds of the compounds A, and
in the treatment liquid, in a case where a content of a compound having a highest content among the compounds A is denoted by α and a content of a compound having a second highest content among the compounds A is denoted by β, a ratio α/β of the content α to the content β is less than 10 in terms of mass ratio.

16. The treatment liquid according to claim 2 ,
wherein the treatment liquid comprises three or more kinds of the compounds A, and
in the treatment liquid, in a case where a content of a compound having a second highest content among the compounds A is denoted by β and a content of a compound having a third highest content among the compounds A is denoted by γ, a ratio β/γ of the content β to the content γ is less than 10 in terms of mass ratio.

17. The treatment liquid according to claim 2 ,
wherein the treatment liquid comprises at least one kind selected from the group consisting of isobutene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, and 4-methyl-3-penten-2-ol.

18. The treatment liquid according to claim 2 ,
wherein a content of the hexylene glycol in the treatment liquid is 60% by mass or more with respect to a total mass of the treatment liquid.

19. The treatment liquid according to claim 2 ,
wherein the basic compound comprises at least one selected from the group consisting of tetramethylammonium hydroxide, monoethanolamine, and hydroxylamine.

20. The treatment liquid according to claim 2 ,
wherein the basic compound comprises a compound B represented by Formula (1),
NH 2 —CH 2 CH 2 —X—CH 2 CH 2 —Y  (1)

in Formula (1), X represents —NR— or —O—, R represents a hydrogen atom or a substituent, and Y represents a hydroxy group or a primary amino group.

Assignees

• Fujifilm Corp

Inventors

• Sugishima Yasuo
• Mizutani Atsushi

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P70/234 Primary

  the processing being the formation of vias or contact holes · CPC title

• C11D3/2044

  linear · CPC title

• C11D3/184

  unsaturated · CPC title

• C11D7/50

  Solvents · CPC title