Polypeptide, photoresist composition including the same, and method of forming pattern using the same

Patent metadata

Field	Value
Publication number	US-12441769-B2
Application number	US-202217741590-A
Country	US
Kind code	B2
Filing date	May 11, 2022
Priority date	Dec 9, 2021
Publication date	Oct 14, 2025
Grant date	Oct 14, 2025

Abstract

A polypeptide including a region A, a region B, and a region C, a photoresist composition including the polypeptide, and a method of forming patterns by using the photoresist composition.

First claim

What is claimed is:

1. A polypeptide consisting of a region A, a region B, a region C, and a region H, wherein the region A is disposed between the region H and the region B, wherein the region A, the region B, and the region C, are consecutively arranged, wherein
the region A has an alanine content of 20% or more and consists of a first repeat unit having 4 to 10 consecutive amino acid residues,
the region B has a tyrosine content of 10% or more and consists of a second repeat unit having 4 to 10 consecutive amino acid residues, and
the region C has a content of 50-70% or more of at least one of aspartic acid or glutamic acid, and consists of a third repeat unit having 2 to 8 consecutive amino acid residues,
the polypeptide has a weight average molecular weight of about 3,000 g/mol to about 10,000 g/mol, and

wherein
the first repeat unit is represented by Formula 1,
the second repeat unit is represented by Formula 2,
the third repeat unit repeat unit is represented by Formula 3, and
the region H is represented by Formula 4:
X 11 -(Ala-X 12 )n11-X 13 ,  Formula 1

X 21 -(X 22 -X 23 )n21-Tyr,  Formula 2

X 31 -(X 32 -X 33 )n31-X 34 ,  Formula 3

X 41 -(Ala-X 42 )n41-X 43 -Gly-Ala-Ala-Ser,  Formula 4

wherein in Formulae 1, 2, 3, and 4
X 11 and X 12 are each independently Gly or Ala, X 13 is Ser or Ala, and n11 is an integer of 1 to 4;
X 21 and X 23 are each independently Gly or Ala, X 22 is Gly, Ala, or Val, and n21 is an integer of 1 to 4;
X 31 to X 34 are each independently Asp or Glu, and n31 is an integer of 0 to 3; and
X 41 and X 42 are each independently Gly or Ala, X 43 is Ser or Ala, and n41 is 1 or 2.

2. The polypeptide of claim 1 , wherein the third repeat unit consists of aspartic acid or glutamic acid.

3. The polypeptide of claim 1 , wherein,
in Formula 1, X 11 and X 12 are each Gly, X 13 is Ser, and n11 is 1 or 2, and
in Formula 2, X 21 and X 23 are each Gly, X 22 is Ala or Val, and n21 is 1, 2, or 3.

4. The polypeptide of claim 1 , wherein
the first repeat unit is Gly-Ala-Gly-Ala-Gly-Ser (SEQ ID: 1) or Gly-Ala-Ala-Ser (SEQ ID: 2),
the second repeat unit is Gly-Ala-Gly-Tyr (SEQ ID: 3), Gly-Ala-Gly-Ala-Gly-Tyr (SEQ ID: 4), Gly-Ala-Gly-Val-Gly-Ala-Gly-Tyr (SEQ ID: 5), or Gly-Ala-Gly-Ala-Gly-Ala-Gly-Tyr (SEQ ID: 6), and
the third repeat unit is Glu-Glu, Asp-Asp, Asp-Glu-Asp-Glu-Asp-Glu (SEQ ID: 7), or Asp-Asp-Asp-Asp-Asp-Asp (SEQ ID: 8).

5. The polypeptide of claim 1 , wherein
the region A has 2 to 12 of the first repeat units,
the region B has 2 to 6 of the second repeat units, and
the region C has 2 to 5 of the third repeat units.

6. The polypeptide of claim 1 , wherein
the region H is-Gly-Ala-Gly-Ala-Gly-Ser-Gly-Ala-Ala-Ser (SEQ ID: 10).

7. The polypeptide of claim 1 , wherein the polypeptide has a viscosity of less than 70 milliPascals second at 25° C.

8. The polypeptide of claim 4 , wherein
the region H is-Gly-Ala-Gly-Ala-Gly-Ser-Gly-Ala-Ala-Ser (SEQ ID: 10).

9. The polypeptide of claim 4 , wherein
the polypeptide has a crystallinity of 40% or more.

10. The polypeptide of claim 4 , wherein
the polypeptide has a water solubility of 0.7 g/ml to 0.9 g/ml at 25° C.

11. A photoresist composition comprising the polypeptide of claim 1 , and water.

12. The composition of claim 11 , wherein the photoresist composition has a polypeptide concentration of about 0.1 w/v % to about 20 w/v %.

13. A method of forming patterns, the method comprising:
applying the photoresist composition of claim 11 onto a substrate;
heating the applied composition to form a photoresist film;
exposing at least a portion of the photoresist film to high-energy light; and
developing the exposed photoresist film with a developer,
wherein the high-energy light has a wavelength of 200 nanometers or less.

14. The method of claim 13 , wherein the heating is performed at about 50° C. to about 95° C.

15. The method of claim 13 , wherein the high-energy light is sourced from an ArF excimer laser having a wavelength of 193 nanometers.

16. The method of claim 13 , wherein the developer consists of water.

17. The method of claim 13 , wherein the portion of the photoresist film exposed to the high-energy light is washed off by water as a developer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Jieun
• Chung Soonchun
• Kim Jinha
• Park Joonsong

Classifications

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F7/039

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

• G03F7/004

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title