Light emitting element and light emitting device

Patent metadata

Field	Value
Publication number	US-12439751-B2
Application number	US-202217592416-A
Country	US
Kind code	B2
Filing date	Feb 3, 2022
Priority date	Feb 4, 2021
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

A light emitting element includes a semiconductor layered body, an insulating film, first and second electrodes, and first and second external connection portions. The semiconductor layered body defines exposed portions in which the first semiconductor layer is exposed from the second semiconductor layer and the light emitting layer. In the plan view, the first external connection portion includes a plurality of first portions located between the exposed portions in a first direction, and arrayed in the first direction, with a number of the first portions disposed between adjacent ones of the exposed portions being two or more, and a plurality of second portions not located between the exposed portions in the first direction, and arrayed in the first direction. Each of the second portions is different in shape or size from each of the first portions.

First claim

What is claimed is:

1. A light emitting element comprising:
a semiconductor layered body having a rectangular planar shape and including a first semiconductor layer, a light emitting layer, and a second semiconductor layer in this order, the semiconductor layered body defining a plurality of exposed portions in which the first semiconductor layer is exposed from the second semiconductor layer and the light emitting layer, each of the exposed portions being surrounded by the second semiconductor layer in a plan view;
an insulating film covering the semiconductor layered body, and defining a plurality of opening portions respectively above the exposed portions;
a first electrode connected to the exposed portions at the opening portions, a portion of the first electrode being disposed on the second semiconductor layer via the insulating film;
a second electrode connected to the second semiconductor layer;
a first external connection portion connected to the first electrode and spaced apart from the exposed portions in the plan view; and
a second external connection portion connected to the second electrode, wherein
in the plan view, the first external connection portion includes
a plurality of first portions located between the exposed portions in a first direction parallel to one side of the semiconductor layered body, and arrayed in the first direction, with a number of the first portions disposed between adjacent ones of the exposed portions being two or more,
a plurality of second portions not located between the exposed portions in the first direction, and arrayed in the first direction, each of the second portions being different in shape or size from each of the first portions, and
a third portion located around a corner portion of the semiconductor layered body, the third portion having a planar area greater than each of a planar area of the first portion and a planar area of the second portion, and

an interval between the first portions adjacent to each other in the first direction, an interval between the second portions adjacent to each other in the first direction, and an interval between the first portion and the second portion in a second direction orthogonal to the first direction are each 16 μm or more.

2. The light emitting element according to claim 1 wherein
the first external connection portion is disposed at a density of 150 units/mm 2 or more.

3. The light emitting element according to claim 1 , wherein
a planar area of one of the first portions of the first external connection portion is from 100 μm 2 to 1000 μm 2 .

4. The light emitting element according to claim 1 , wherein
each of the first portions has a shape having a curved portion on a side facing the exposed portion in the plan view, and
the second portion has a quadrangular shape in the plan view.

5. The light emitting element according to claim 1 , wherein
in the plan view, the first semiconductor layer further includes an outer peripheral exposed portion disposed at an outer periphery of the second semiconductor layer and in which the first semiconductor layer is exposed from the second semiconductor layer and the light emitting layer,
the first electrode is connected to the outer peripheral exposed portion, and
the first external connection portion further includes a plurality of fourth portions each disposed adjacent to the outer peripheral exposed portion, each of the fourth portions having a planar shape having a curved portion on a side facing the outer peripheral exposed portion in the plan view.

6. The light emitting element according to claim 1 , wherein
the exposed portions are disposed in a matrix pattern.

7. The light emitting element according to claim 1 , wherein
the first external connection portion is arranged in a plurality of groups, and
the second external connection portion is disposed between the groups of the first external connection portion in the plan view.

8. The light emitting element according to claim 1 , wherein
the second external connection portion includes a plurality of sixth portions disposed in a matrix pattern, and a plurality of seventh portions disposed on both sides of the plurality of sixth portions in the first direction, each of the seventh portions having a planar area greater than a planar area of each of the sixth portions.

9. The light emitting element according to claim 8 , wherein
in the plan view, the seventh portions disposed on both the sides of the plurality of sixth portions in the first direction have mutually different shapes or sizes.

10. The light emitting element according to claim 1 , wherein,
the first external connection portion is provided adjacent to the second external connection portion near an end portion of the second semiconductor layer in the first direction in the plan view, and
the first external connection portion further includes a fifth portion having a planar shape having an inclined portion inclined with respect to the one side of the semiconductor layered body, on a side facing the second external connection portion.

11. The light emitting element according to claim 1 , wherein
the first external connection portion further includes an eighth portion having a circular planar shape, the eight portion being not located between the exposed portions in the first direction.

12. A light emitting device comprising:
the light emitting element according to claim 1 ;
a substrate including a plurality of wires on an upper surface thereof, the light emitting element being flip-chip mounted on the plurality of wires via the first external connection portion and the second external connection portion; and
a cover member containing a light reflective substance, the cover member covering the light emitting element, the first external connection portion, the second external connection portion, and the substrate.

13. The light emitting device according to claim 12 , wherein
the light emitting element includes a first light emitting portion and a second light emitting portion disposed on the substrate, each of the first light emitting portion and the second light emitting portion includes the first external connection portion and the second external connection portion, and
the plurality of wires include
a first wire portion connected to the first external connection portion of the first light emitting portion,
a second wire portion connected to the second external connection portion of the first light emitting portion and the first external connection portion of the second light emitting portion, and
a third wire portion connected to the second external connection portion of the second light emitting portion.

14. The light emitting device according to claim 13 , wherein
in a second direction orthogonal to the first direction,
a portion of the second wire portion connected to the second external connection portion of the first light emitting portion is located between parts of the first wire portion, and
a portion of the third wire portion connected to the second external connection portion of the second light emitting portion is located between parts of the second wire portion.

15. The light emitting device according to claim 13 , wherein
in the plan view, a distance between the first wire portion and the second wire portion and a distance between the second wire portion and the third wire portion, in a second direction orthogonal to the first direction, are each from 30 μm to 70 μm.

16. A light emitting element comprising:
a semiconductor layered body having a rectangular planar shape and inclu

Assignees

• Nichia Corp

Inventors

• Furuha Naoto
• Fukuta Hiroki

Classifications

• H10H20/8312 Primary

  extending at least partially through the bodies · CPC title

• H10H20/857 Primary

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/8316

  Multi-layer electrodes comprising at least one discontinuous layer · CPC title