Tools and systems for processing semiconductor devices, and methods of processing semiconductor devices
US-12142594-B2 · Nov 12, 2024 · US
US12438121B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12438121-B2 |
| Application number | US-201615017975-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 8, 2016 |
| Priority date | Nov 3, 2010 |
| Publication date | Oct 7, 2025 |
| Grant date | Oct 7, 2025 |
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Methods for die attachment of multichip and single components may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.
Opening claim text (preview).
What is claimed is: 1. A method for attachment, comprising: applying a film of metal particles to a polymeric, glass, metal, paper, or ceramic substrate, wherein applying the film comprises casting the film; drying the film on the polymeric, glass, metal, paper, or ceramic substrate; transferring the dried film by a lamination process at a temperature of from about 50 to about 175° C. and a pressure of from about 0.05 to about 3 MPa directly from the polymeric, glass, metal, paper, or ceramic substrate to a substrate which will subsequently receive one or more components comprising a die, wherein the dried film is in contact with the polymeric, glass, metal, paper, or ceramic substrate during lamination to the substrate which will subsequently receive said one or more components; placing said one or more components on the transferred film to form an assembly; applying a pressure of from about 0.5 MPa to about 20 MPa to the assembly; and sintering the assembly at a temperature of about 175 to about 400° C. for about 0.25 seconds to about 30 minutes; wherein the film comprises a composition comprising: a metal powder having a d 50 range of 0.001 to 10 micrometers, the metal powder comprising 30 to 95 wt. % of the composition; and a binder having a softening point between about 90° C. and 170° C., the binder comprising 0.1 to 0.8 wt. % of the composition; wherein the composition has a viscosity of from about 10 to about 200,000 cP. 2. The method of claim 1 wherein the binder comprises a resin or a rosin. 3. The method of claim 1 , wherein the applied pressure is from about 2.0 to about 10 MPa. 4. The method of claim 1 , wherein the metal particles comprise coated or capped metal particles. 5. The method of claim 1 , wherein the metal particles are selected from the group consisting of gold, palladium, silver, copper, aluminum, silver palladium alloy, and gold palladium alloy. 6. The method of claim 1 , wherein the metal particles comprise silver particles. 7. The method according to claim 1 , wherein the composition further comprises one or more functional additives, the functional additives comprising 0.1 to 2 wt. % of the paste. 8. The method according to claim 7 , wherein the functional additives are selected from the group consisting of organic acids, amines, chlorinated diols, brominated diols, and metalorganic compounds. 9. The method of claim 1 wherein the polymeric, glass, metal, paper, or ceramic substrate comprises a release layer or coating. 10. The method of claim 1 wherein the polymeric, glass, metal, paper, or ceramic substrate comprises silicone. 11. The method of claim 1 wherein the transferred film is released from the polymeric, glass, metal, paper, or ceramic substrate as a result of the lamination process. 12. The method of claim 1 wherein the substrate which will subsequently receive one or more components is a direct bonded copper (DBC) substrate, silicon wafer substrate, heat spreader, or piezoelectric substrate. 13. The method of claim 1 wherein the polymeric, glass, metal, paper, or ceramic substrate is a flexible polyester substrate. 14. The method of claim 1 wherein the substrate which will subsequently receive one or more components is a lead frame. 15. The method of claim 1 wherein the substrate which will subsequently receive one or more components is a wafer.
batch processes · CPC title
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Applying EM radiation, e.g. induction heating or using a laser · CPC title
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