Threshold compensated detector for memory sense

Patent metadata

Field	Value
Publication number	US-12437787-B2
Application number	US-202318518126-A
Country	US
Kind code	B2
Filing date	Nov 22, 2023
Priority date	Dec 27, 2022
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

A detection circuit may be configured to receive an input signal indicative of a data state and to detect the data state using charge sharing between two capacitors to achieve detection with threshold compensation. The detection circuit may include semi-latch circuitry and boosting circuitry to expedite the detection, thereby achieving high speed at low power consumption and low circuit size.

First claim

What is claimed is:

1. An electronic device, comprising:
a detection circuit configured to receive an input signal indicative of a data state and to detect the data state, the detection circuit including:
a power supply voltage node to receive a power supply voltage;
a reference node to provide a power supply reference level; and
charge sharing circuitry including:
a first capacitor having a first terminal and a second terminal;
a first switch coupled between the power supply voltage node and the first terminal of the first capacitor, the first switch configured to receive a first switch signal and to be driven by first switch signal to charge the first capacitor;
a second capacitor having a first terminal and a second terminal, the second terminal of the second capacitor coupled to the reference node;
a second switch coupled between the first terminal of the second capacitor and the reference node, the second switch configured to receive a second switch signal and to be driven by the second switch signal to discharge the second capacitor; and
a third switch coupled between the first terminal of the first capacitor and the first terminal of the second capacitor, the third switch configured to be driven by the input signal to detect the data state using charge sharing between the first capacitor and the second capacitor,

wherein a voltage at the first terminal of the second capacitor is indicative of the data state.

2. The electronic device of claim 1 , wherein the detection circuit further comprises:
semi-latch circuitry including a switching circuit coupled between the power supply voltage node and the first terminal of the second capacitor, the switching circuit configured to be driven by the voltage at the first terminal of the second capacitor to reduce a time for charging the second capacitor when the third switch is closed and to latch the voltage on the second capacitor when the third switch is open; and
boosting circuitry including a buffer having a buffer input coupled to the first terminal of the second capacitor and a buffer output coupled to the second terminal of the first capacitor to stabilize a voltage at the buffer output.

3. The electronic device of claim 2 , wherein the detection circuit further comprises output circuitry coupled to the buffer output and configured to produce an output signal representing the detected data state based on the voltage at the buffer output.

4. The electronic device of claim 3 , comprising a memory device including:
memory cells each configured to store a data bit; and
sensing circuitry configured to read the data bits from the memory cells, the sensing circuitry including the detection circuit coupled to one or more memory cells to detect the data state of the data bit stored in each memory cell of the one or more memory cells.

5. The electronic device of claim 4 , wherein the memory device comprises a holographic random access memory device.

6. The electronic device of claim 4 , wherein the memory device comprises a stacked array of multiple memory dies each including multiple memory cells.

7. The electronic device of claim 3 , wherein:
the first switch comprises a first transistor being a p-channel metal-oxide-semiconductor field-effect transistor having a first drain coupled to the first terminal of the first capacitor, a first source coupled to the power supply voltage node, and a first gate to receive the first switching signal;
the second switch comprises a second transistor being an n-channel metal-oxide-semiconductor field-effect transistor having a second drain coupled to the first terminal of the second capacitor, a second source coupled to the reference node, and a second gate to receive the second switching signal; and
the third switch comprises a third transistor being a p-channel metal-oxide-semiconductor field-effect transistor having a third drain coupled to the first terminal of the second capacitor, a third source coupled to the first terminal of the first capacitor, and a third gate to receive the input signal.

8. The electronic device of claim 7 , wherein the detection circuit further comprises an input capacitor coupled between the third gate and the reference node.

9. The electronic device of claim 7 , wherein the second capacitor comprises a parasitic capacitance of the second switch.

10. The electronic device of claim 7 , wherein the semi-latch circuitry comprises:
a switch driver coupled to the first terminal of the second capacitor and configured to produce a driving signal; and
a fourth switch coupled between the power supply voltage node and the first terminal of the second capacitor, the fourth switch configured to be driven by the driving signal produced by the switch driver.

11. The electronic device of claim 10 , wherein:
the switch driver comprises a first inverter having a first inverter input and a first inverter output, the first inverter input coupled to the first terminal of the second capacitor, the first inverter output to provide the driving signal; and
the fourth switch comprises a fourth transistor being a p-channel metal-oxide-semiconductor field-effect transistor having a fourth drain coupled to the first terminal of the second capacitor, a fourth source coupled to the power supply voltage node, and a fourth gate coupled to the first inverter output to receive the driving signal.

12. The electronic device of claim 11 , wherein the buffer of the boosting circuitry comprises:
a second inverter having a second inverter input and a second inverter output, the second inverter input being the buffer input; and
a third inverter having a third inverter input and a third inverter output, the third inverter input coupled to the second inverter output, the third inverter output being the buffer output.

13. An electronic circuit, comprising:
an input node to receive an input signal indicative of a data state;
a power supply voltage node to receive a power supply voltage;
a first switch node to receive a first switching signal;
a second switch node to receive a second switching signal;
a ground node to provide a power supply ground level; and
charge sharing circuitry including:
a first transistor being a p-channel metal-oxide-semiconductor field-effect transistor having a first drain, a first source coupled to the power supply voltage node, and a first gate coupled to the first switch node;
a first capacitor having a first terminal and a second terminal, the first terminal coupled to the first drain;
a second transistor being an n-channel metal-oxide-semiconductor field-effect transistor having a second drain, a second source coupled to the ground node, and a second gate coupled to the second switch node;
a second capacitor formed by a parasitic capacitance at the second drain; and
a third transistor being a p-channel metal-oxide-semiconductor field-effect transistor having a third drain coupled to the second drain, a third source coupled to the first drain, and a third gate coupled to the input node.

14. The circuit of claim 13 , further comprising:
semi-latch circuitry including:
a first inverter having a first inverter input and a first inverter output, the first inverter input coupled to the second drain; and
a fourth transistor being a p-channel metal-oxide-semiconductor field-effect transistor having a fourth drain connected to the first inverter input, a fourth source coupled to the power supply voltage node, and a fourth gate coupled to the first inverter output;

boosting circuitry including:
a second inverter having a second inverter input and a second inverter output, the second inverter inp

Assignees

• Micron Technology Inc

Inventors

• Bedeschi Ferdinando
• Di Vincenzo Umberto
• Venturini Michele Maria

Classifications

• G11C13/042

  using information stored in the form of interference pattern · CPC title

• G11C7/067 Primary

  Single-ended amplifiers · CPC title

• H03K17/687 Primary

  the devices being field-effect transistors · CPC title