Quantum dot light-emitting device and manufacturing method therefor, and display panel

Patent metadata

Field	Value
Publication number	US-12435271-B2
Application number	US-202117777405-A
Country	US
Kind code	B2
Filing date	Jan 13, 2021
Priority date	Jan 20, 2020
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

A quantum dot light-emitting device and a manufacturing method therefor, and a display panel. The quantum dot light-emitting device comprises: a quantum dot layer and an electron transport layer adjacent to the quantum dot layer; the electron transport layer comprises a first group, and the quantum dot layer comprises a second group; the first group and the second group each comprise a hydrophilic group. The first group and the second group are combined by means of a hydrogen bond on contact surfaces of the quantum dot layer and the electron transport layer, to enhance an interface interaction force between the quantum dot layer and the electron transport layer, thereby reducing interface defects of the quantum dot layer and the electron transport layer, and improving the electroluminescence performance and stability of the quantum dot device.

First claim

What is claimed is:

1. A quantum dot light-emitting device, comprising:
an electron transport layer, wherein a material of the electron transport layer comprises a host material and a first group connected with the host material, and the first group is a hydrophilic group; and
a quantum dot layer, wherein the quantum dot layer and the electron transport layer are laminated in film layers and adjacent to each other, a material of the quantum dot layer comprises a quantum dot material and a second group connected with the quantum dot material, the second group is a hydrophilic group, and the first group and the second group are bonded by means of a hydrogen bond on a contact surface of the quantum dot layer and the electron transport layer;
wherein the host material comprises zinc oxide nanoparticles, and the first group comprises a short-chain alcohol amine.

2. The quantum dot light-emitting device according to claim 1 , wherein the second group is generated by illumination decomposition of a third group connected with the quantum dot material, the third group is a lipophilic group, and the third group comprises a photosensitive group.

3. The quantum dot light-emitting device according to claim 2 , wherein the third group comprises at least one of a long chain carboxylic acid, an amine, thiol, an organic phosphine oxide group, o-diazoquinones, a benzoin derivative, an azobisnitrile derivative or a group with a disulfide bond.

4. The quantum dot light-emitting device according to claim 1 , wherein the second group comprises at least one of hydroxyl, carboxyl or amino.

5. The quantum dot light-emitting device according to claim 1 , wherein the material of the quantum dot layer further comprises a fourth group connected with the quantum dot material.

6. The quantum dot light-emitting device according to claim 5 , wherein the fourth group comprises at least one of carboxylic acid, amine, thiol or organic phosphine oxide.

7. The quantum dot light-emitting device according to claim 1 , wherein the first group comprises ethanolamine, the second group comprises indene 1-formate, and the ethanolamine and the indene 1-formate are bonded by means of a hydrogen bond on the contact surface of the quantum dot layer and the electron transport layer.

8. The quantum dot light-emitting device according to claim 1 , further comprising a substrate, and a cathode, the electron transport layer, the quantum dot layer, a hole transport layer, a hole injection layer and an anode which are sequentially stacked on the substrate.

9. A display panel, comprising the quantum dot light-emitting device according to claim 1 .

10. A manufacturing method for a quantum dot light-emitting device, comprising:
forming an electron transport layer and a quantum dot layer which are laminated in film layers and adjacent to each other on a substrate, wherein a material of the electron transport layer comprises a host material and a first group connected with the host material, the first group is a hydrophilic group, a material of the quantum dot layer comprises a quantum dot material and a third group connected with the quantum dot material, and the third group is a lipophilic group; and
illuminating the quantum dot layer to decompose the third group into a second group, wherein the second group is a hydrophilic group, and the first group and the second group are bonded by means of a hydrogen bond on a contact surface of the quantum dot layer and the electron transport layer.

11. The method according to claim 10 , wherein the forming the quantum dot layer comprises:
providing a quantum dot solution, and providing a first ligand comprising the third group;
mixing and uniformly stirring the quantum dot solution and the first ligand to obtain a mixed solution;
centrifuging the mixed solution, removing supernatant liquid, and adding the mixed solution without the supernatant liquid into a solvent to obtain a quantum dot dispersion solution; and
depositing the quantum dot dispersion solution on the substrate by adopting a spin coating or printing process, and drying to form the quantum dot layer.

12. The method according to claim 11 , wherein while providing the quantum dot solution, and providing the first ligand comprising the third group, the method further comprises:
providing a second ligand comprising a fourth group; and
while mixing and uniformly stirring the quantum dot solution and the first ligand, the method further comprises:
mixing and uniformly stirring the quantum dot solution, the first ligand and the second ligand.

13. The method according to claim 11 , wherein a mass percentage of the first ligand in the mixed solution is 1-50%.

14. The method according to claim 10 , wherein the illuminating the quantum dot layer to decompose the third group into the second group comprises:
performing ultraviolet irradiation from one side of the electron transport layer to decompose the third group into the second group.

15. The method according to claim 10 , wherein before forming an electron transport layer and a quantum dot layer which are laminated in film layers and adjacent to each other on the substrate, the method further comprises:
forming a cathode on the substrate;
the forming the electron transport layer and the quantum dot layer which are laminated in film layers and adjacent to each other on the substrate comprises:
forming the electron transport layer on the cathode; and
forming the quantum dot layer on the electron transport layer.

16. The method according to claim 10 , wherein after illuminating the quantum dot layer to decompose the third group into the second group, the method further comprises:
forming a hole transport layer on the quantum dot layer;
forming a hole injection layer on the hole transport layer; and
forming an anode on the hole injection layer.

Assignees

• Beijing Boe Technology Dev Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Yu Gang
• Wang Tieshi

Classifications

• H10K85/00

  Organic materials used in the body or electrodes of devices covered by this subclass · CPC title

• H10K71/40

  Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

• H10K50/16

  Electron transporting layers · CPC title

• H10K50/115 Primary

  comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title

• C09K11/54 Primary

  containing zinc or cadmium · CPC title