Boron-doped carbon nanotubes synthesized by arc discharge and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-12434972-B2
Application number	US-202217847150-A
Country	US
Kind code	B2
Filing date	Jun 22, 2022
Priority date	Jun 28, 2021
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

Disclosed are a multi-wall carbon nanotube (MWCNT) formed using arc discharge and a method for manufacturing the same. The carbon source of the anode and boron that is the doping source, are evaporated through arc discharge and then deposited on the surface of the cathode to form MWCNTs, and boron is evenly distributed in the multi-walls of the MWCNTs. Therefore, the outer diameter of the MWCNT is reduced, high thermal stability is secured, and the effect of improving the field emission characteristics can be obtained.

First claim

The invention claimed is:

1. A multi-walled carbon nanotube (MWCNT) doped with boron and having a reduced outer diameter compared to an undoped carbon nanotube, wherein the outer diameter of the doped MWCNT has a value of 4 nm to 20 nm, wherein the MWCNT has 10.4 or less as average crystallinity evaluation index on a Raman spectrum.

2. The MWCNT of claim 1 , wherein an inner diameter of the MWCNT is increased compared to the undoped carbon nanotube.

3. The MWCNT of claim 1 , wherein a concentration of the boron in the MWCNT is 431 ppm to 630 ppm.

4. The MWCNT of claim 1 , wherein an average value of oxidation peak temperature of the MWCNT is 834° C. or more.

5. The MWCNT of claim 1 , wherein an average value of the outer diameter is 9.5 nm to 10 nm.

6. The MWCNT of claim 1 , wherein an interval between walls of the MWCNT is 0.348 nm to 0.349 nm.

7. The MWCNT of claim 1 , wherein the MWCNT is synthesized by arc discharge.

8. The MWCNT of claim 1 , wherein the boron is doped in a substitutional type, and the MWCNT has p-type conductivity.

9. A method of manufacturing a MWCNT comprising:
generating an arc discharge by applying a voltage between anode and cathode spaced apart from each other;
evaporating graphite powder to make carbon vapor and boron powder to make boron vapor at the anode close to the cathode by the arc discharge; and
forming boron-doped carbon nanotube by depositing the carbon vapor and the boron vapor on surface of the cathode,
wherein the anode and the cathode are made of graphite, and
wherein the anode comprises:
a filled region having a hole that is formed from a surface facing the cathode and is filled with a mixed powder of the graphite powder and the boron powder; and
a bulk region extending from the filled region,
wherein the boron powder has a content of 0.02 wt % to 0.04 wt % based on the sum of the mixed powder and the graphite surrounding the hole.

10. The method of claim 9 , wherein the carbon vapor and the boron vapor are generated by the arc discharge at the end of the filled region.

11. The method of claim 9 , wherein the graphite defining periphery of the hole of the filling region is evaporated to form the carbon vapor, and the mixed powder is evaporated to form the carbon vapor and the boron vapor.

12. The method of claim 9 , wherein the carbon nanotube has multi-walls, and the boron is doped in the multi-walls at concentration of 431 ppm to 630 ppm.

Assignees

• Industry Academia Cooperation Group Of Sejong Univ

Inventors

• Lee Nae Sung
• Zain Mehdi Syed Muhammad

Classifications

• B01J2219/0845

  Details relating to the type of discharge · CPC title

• C01P2006/80

  Compositional purity · CPC title

• C01P2002/04

  Compounds with a limited amount of crystallinty, e.g. as indicated by a crystallinity index · CPC title

• C01P2002/54

  one element only · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title