Method for fabricating a microfluidic device

Patent metadata

Field	Value
Publication number	US-12434962-B2
Application number	US-202117203026-A
Country	US
Kind code	B2
Filing date	Mar 16, 2021
Priority date	Mar 24, 2020
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

A method for fabricating a microfluidic device includes providing an assembly that includes a first silicon substrate having a hydrophilic silicon oxide top surface that includes a microfluidic channel and a second silicon substrate having a hydrophilic silicon oxide bottom surface directly bonded on the top surface of the first silicon substrate, the second silicon substrate including fluidic access holes giving fluidic access to the microfluidic channel. The method also includes exposing the assembly to oxidative species including one or more oxygen atoms and to heat so as to form silicon oxide at a surface of the access holes and of the microfluidic channel.

First claim

What is claimed is:

1. A method comprising:
forming a first hydrophilic silicon oxide surface on a first silicon substrate that includes a microfluidic channel;
forming a second hydrophilic silicon oxide surface on a second silicon substrate;
bonding the first hydrophilic silicon oxide surface to the second hydrophilic silicon oxide surface such that the microfluidic channel is partially closed by the second hydrophilic silicon oxide surface; and
removing a portion of the second silicon substrate, thereby forming a fluidic access hole that passes through the second silicon substrate to provide access to the microfluidic channel.

2. The method of claim 1 , wherein the microfluidic channel includes surface levels at multiple depths.

3. The method of claim 1 , wherein bonding the first hydrophilic silicon oxide surface to the second hydrophilic silicon oxide surface comprises heating the first silicon substrate and the second silicon substrate to a temperature of 110° C. to 250° C.

4. The method of claim 1 , further comprising thinning the second silicon substrate to a thickness of 1 μm to 200 μm prior to forming the fluidic access hole.

5. The method of claim 1 , wherein forming the fluidic access hole comprises forming the fluidic access hole via i-line lithography.

6. The method of claim 1 , wherein forming the first hydrophilic silicon oxide surface comprises annealing the first hydrophilic silicon oxide surface at a temperature of 500° C. to 1200° C.

7. The method of claim 1 , further comprising exposing the microfluidic channel and the fluidic access hole to an oxidative material and to heat ranging from 500° C. to 1200° C.

8. The method of claim 1 , further comprising:
forming and patterning a first mask on the first silicon substrate;
forming and patterning a second mask on the first mask or the first silicon substrate, thereby forming first regions of the first silicon substrate covered by both the first mask and the second mask, second regions of the first silicon substrate covered by the second mask but not the first mask, and third regions of the first silicon substrate covered by neither the first mask nor the second mask;
etching the second regions to a first depth into the first silicon substrate; and
etching the third regions to a second depth into the first silicon substrate that is deeper than the first depth,
wherein forming the first hydrophilic silicon oxide surface comprises forming the first hydrophilic silicon oxide surface on the first regions, the second regions, and the third regions after etching the second regions and etching the third regions.

9. The method of claim 1 , wherein bonding the first hydrophilic silicon oxide surface to the second hydrophilic silicon oxide surface comprises pressing the second silicon substrate against the first silicon substrate while exposing the first hydrophilic silicon oxide surface and the second hydrophilic silicon oxide surface to an oxidative material.

10. The method of claim 1 , wherein bonding the first hydrophilic silicon oxide surface to the second hydrophilic silicon oxide surface comprises exposing the first hydrophilic silicon oxide surface and the second hydrophilic silicon oxide surface to an oxidative material.

11. The method of claim 1 , wherein forming the second hydrophilic silicon oxide surface comprises:
exposing the microfluidic channel in the second silicon substrate to an oxygen-based plasma;
exposing the microfluidic channel in the second silicon substrate to a wet cleaning solution; and
exposing the microfluidic channel in the second silicon substrate to an oxidative species comprising one or more oxygen atoms and heating the microfluidic channel in the second silicon substrate.

12. The method of claim 11 , wherein the first silicon substrate and the second silicon substrate both comprise alignment fiducials, and wherein bonding the first hydrophilic silicon oxide surface to the second hydrophilic silicon oxide surface comprises bonding the first hydrophilic silicon oxide surface to the second hydrophilic silicon oxide surface such that the alignment fiducials are aligned.

13. The method of claim 1 , wherein bonding the first hydrophilic silicon oxide surface to the second hydrophilic silicon oxide surface comprises pressing the second silicon substrate against the first silicon substrate.

14. The method of claim 13 , wherein pressing the second silicon substrate against the first silicon substrate comprises pressing the second silicon substrate against the first silicon substrate with a force of at least 20 kN.

15. The method of claim 1 , further comprising:
etching the microfluidic channel in the first silicon substrate prior to forming the first hydrophilic silicon oxide surface, wherein forming the first hydrophilic silicon oxide surface comprises:
exposing the microfluidic channel in the first silicon substrate to an oxygen-based plasma;
exposing the microfluidic channel in the first silicon substrate to a wet cleaning solution; and
exposing the microfluidic channel in the first silicon substrate to an oxidative species comprising one or more oxygen atoms and heating the microfluidic channel in the first silicon substrate.

16. The method of claim 15 , wherein etching the microfluidic channel in the first silicon substrate comprises:
providing a hard mask over the first silicon substrate, the hard mask presenting a feature pattern corresponding to the microfluidic channel in the first silicon substrate; and
etching the first silicon substrate through the hard mask.

17. The method of claim 16 , wherein etching the first silicon substrate comprises:
performing, via a plasma, an anisotropic etch of the first silicon substrate using a reactive etching gas, thereby removing material from the first silicon substrate and providing exposed surfaces; and
polymerizing a polymer former contained in the plasma onto the first silicon substrate.

Assignees

• Imec Vzw

Inventors

• Fiorentino Giuseppe
• Humbert Aurelie
• Severi Simone
• Jones Benjamin

Classifications

• B81C2201/0198

  for making a masking layer · CPC title

• B81C2201/0183

  Selective deposition · CPC title

• B81C2201/0169

  by post-annealing · CPC title

• B81C2201/0159

  Lithographic techniques not provided for in B81C2201/0157 · CPC title

• B81C2201/0132

  Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling · CPC title