RF switch device

Patent metadata

Field	Value
Publication number	US-12433005-B2
Application number	US-202318171657-A
Country	US
Kind code	B2
Filing date	Feb 20, 2023
Priority date	Apr 18, 2022
Publication date	Sep 30, 2025
Grant date	Sep 30, 2025

Abstract

Provided is an RF switch device and a method of manufacturing the same and, more particularly, to an RF switch device that improves the on-resistance (Ron) of the RF switch by including an integral or integrally formed P diode. The RF switch device includes a first active region on a first substrate as a first base, a second active region on the first substrate spaced apart from the first active region as a second base, and a gate electrode on the first active region and on the second active region.

First claim

What is claimed is:

1. An RF switch device, comprising:
a first active region comprising a P well on or in a substrate;
a P diode comprising (i) an N well cathode on or in the substrate and (ii) a first p-type anode and a second p-type anode on opposite sides of the cathode;
a gate electrode on the first active region and the P diode; and
a first conductive region connecting at least a portion of the P well body region and one of the first p-type anode and the second p-type anode,
wherein the gate electrode comprises:
first and second horizontal electrodes spaced apart from each other; and
a plurality of cross-electrodes connecting the first and second horizontal electrodes, and

the first active region comprises:
a source on a first side of each of the cross-electrodes; and
a drain on a second side of each of the cross-electrodes.

2. The RF switch device of claim 1 , wherein:
the first horizontal electrode is on the first active region and the second active region along a first direction;
the second horizontal electrode is spaced apart from the first horizontal electrode and on the first active region and the second active region along the first direction; and
the plurality of cross-electrodes are on the first active region along a second direction perpendicular to the first direction, and each of the plurality of cross-electrodes has ends respectively connected to the first horizontal electrode and the second horizontal electrode.

3. The RF switch device of claim 2 , wherein the one or more cross-electrodes comprise:
a first cross-electrode on the first active region along the second direction;
a second cross-electrode spaced apart from the first cross-electrode, on the first active region along the second direction; and
a third cross-electrode spaced apart from the second cross-electrode, on the first active region along the second direction,
wherein the second cross-electrode is between the first cross-electrode and the third cross-electrode.

4. The RF switch device of claim 3 , wherein:
the cathode is between the first horizontal electrode and the second horizontal electrode;
the first anode is on a side of the first horizontal electrode opposite from the cathode; and
the second anode is on a side of the second horizontal electrode opposite from the cathode.

5. The RF switch device of claim 1 , wherein:
the first conductive region is adjacent to one of the first and second horizontal electrodes; and
the RF switch device further comprises a second conductive region adjacent to a remaining one of the first and second horizontal electrodes, connecting the first active region and the other one of the first p-type anode and the second p-type anode.

6. The RF switch device of claim 1 , further comprising:
a separator electrically separating the first active region and the P diode, and.

7. The RF switch device of claim 1 , wherein the first anode and the second anode comprise p-type impurity-doped regions.

8. The RF switch device of claim 1 , wherein:
the P well comprises a body region under each of the horizontal electrodes in the first active region.

9. The RF switch device of claim 1 , further comprising a buried oxide layer under the first active region and the N well cathode.

10. The RF switch device of claim 9 , wherein the plurality of source and drain terminals comprise:
a first source on a first side of the first cross-electrode;
a first drain between the first cross-electrode and the second cross-electrode;
a second source between the second cross-electrode and the third cross-electrode; and
a second drain on a remaining side of the third cross-electrode.

11. An RF switch device, comprising:
a first active region comprising a P well body region on or in a substrate and a plurality of source and drain terminals spaced apart from each other;
a second active region comprising a N well cathode on or in the substrate and first and second p-type anodes on opposite sides of the cathode; and
a gate electrode on the first active region and the second active region; and
a first conductive region connecting at least a portion of the P well and one of the first and second p-type anodes,
wherein the gate electrode comprises:
first and second horizontal electrodes spaced apart from each other; and
a plurality of cross-electrodes connecting the first and second horizontal electrodes.

12. The RF switch device of claim 11 , wherein:
the first conductive region is adjacent to the first horizontal electrode; and
the RF switch device further comprises a second conductive region adjacent to the second horizontal electrode, configured to connect the first active region and the other one of the first and second p-type anodes.

13. The RF switch device of claim 11 , wherein,
in the first active region, one of the cross-electrodes is between a first one of the source and drain terminals and a second one of the source and drain terminals.

14. The RF switch device of claim 11 , further comprising a separator separating the first active region and the second active region.

15. The RF switch device of claim 11 , wherein the first anode and the second anode comprise p-type impurity-doped regions.

16. The RF switch device of claim 11 , wherein the one or more cross-electrodes comprise:
a first cross-electrode on the first active region;
a second cross-electrode spaced apart from the first cross-electrode, on the first active region; and
a third cross-electrode spaced apart from the second cross-electrode, on the first active region,
wherein the second cross-electrode is between the first cross-electrode and the third cross-electrode.

17. The RF switch device of claim 11 , further comprising a buried oxide layer under the first active region and the N well cathode.

Assignees

• Db Hitek Co Ltd

Inventors

• Koo Ja Geon
• Jung Jin Hyo
• Kim Hae Taek
• Lee Hyun Joong
• Kim Jung Ah

Classifications

• H10D84/811 Primary

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• H10D30/023

  having multiple independently-addressable gate electrodes influencing the same channel (manufacture or treatment of dual gate TFTs H10D30/031) · CPC title

• H03K17/6871

  the output circuit comprising more than one controlled field-effect transistor · CPC title

• H10D30/6744

  Monocrystalline silicon · CPC title