Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-12432999-B2
Application number	US-202318168956-A
Country	US
Kind code	B2
Filing date	Feb 14, 2023
Priority date	Sep 7, 2022
Publication date	Sep 30, 2025
Grant date	Sep 30, 2025

Abstract

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode; a fourth electrode, a semiconductor member, a first conductive member, a second conductive member, and an insulating member. The semiconductor member includes first, second and third semiconductor regions. The first semiconductor region includes a first outer edge region, a first partial region, a second partial region, a third partial region, and a fourth partial region. The first, third and fourth partial regions are of a first conductivity type. The second semiconductor region is of a second conductivity type. The third semiconductor region is of the first conductivity type. The second conductive member includes a first conductive portion. The insulating member includes a first insulating region and a second insulating region. An electrical resistivity of the second partial region is higher than an electrical resistivity of the first partial region.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a first electrode;
a second electrode, a direction from the first electrode to the second electrode being along a first direction;
a third electrode;
a fourth electrode;
a semiconductor member, the semiconductor member including a first semiconductor region, a second semiconductor region and a third semiconductor region, the semiconductor member being provided between the first electrode and the second electrode,
the first semiconductor region including a first outer edge region, a first partial region, a second partial region, a third partial region, and a fourth partial region, the second partial region being located between the first partial region and the first outer edge region in a second direction crossing the first direction, the third partial region being located between the first partial region and the second partial region in the second direction, the fourth partial region being located between the third partial region and a part of the second electrode in the first direction, the first partial region, the third partial region, and the fourth partial region being of a first conductivity type, a direction from the first partial region to the third electrode being along the first direction, a direction from the second partial region to the fourth electrode being along the first direction,
the second semiconductor region being of a second conductivity type, the second semiconductor region being provided between the fourth partial region and the part of the second electrode in the first direction, the second semiconductor region being located between the third electrode and the fourth electrode in the second direction, and
the third semiconductor region being of the first conductivity type, the third semiconductor region being provided between the second semiconductor region and the part of the second electrode, the third semiconductor region being electrically connected to the second electrode;

a first conductive member provided between the first partial region and the third electrode in the first direction, the first conductive member being electrically connected to the second electrode;
a second conductive member including a first conductive portion, the first conductive portion being located between the second partial region and the fourth electrode in the first direction, the second conductive member being electrically connected to the second electrode; and
an insulating member including a first insulating region and a second insulating region, the first insulating region being provided between the semiconductor member and the third electrode, between the semiconductor member and the first conductive member, and between the first conductive member and the third electrode, the second insulating region being provided between the semiconductor member and the fourth electrode, between the semiconductor member and the second conductive member, and between the second conductive member and the fourth electrode,
an electrical resistivity of the second partial region being higher than an electrical resistivity of the first partial region.

2. The device according to claim 1 , wherein the electrical resistivity of the second partial region is higher than an electrical resistivity of the first outer edge region.

3. The device according to claim 1 , wherein
the semiconductor member further includes a fourth semiconductor region provided between the first electrode and the first semiconductor region,
the fourth semiconductor region is of the first conductivity type,
a carrier concentration of the first conductivity type in the fourth semiconductor region is higher than a carrier concentration of the first conductivity type in the first partial region,
the fourth semiconductor region includes a first semiconductor portion and a second semiconductor portion,
the first semiconductor portion is located between the first electrode and the first partial region in the first direction,
the second semiconductor portion is located between the first electrode and the first outer edge region in the first direction, and
an electrical resistivity of the second semiconductor portion is higher than an electrical resistivity of the first semiconductor portion.

4. The device according to claim 1 , wherein an electrical resistivity of at least a part of the third partial region is higher than the electrical resistivity of the first partial region.

5. The device according to claim 4 , wherein
the first insulating region includes a first insulating portion,
the first insulating portion is located between the first partial region and the first conductive member in the first direction,
the second insulating region includes a second insulating portion,
the second insulating portion is located between the second partial region and the second conductive member in the first direction, and
at least a part of the third partial region is located between the first insulating portion and the second insulating portion.

6. A semiconductor device, comprising:
a first electrode;
a second electrode, a direction from the first electrode to the second electrode being along a first direction;
a third electrode;
a fourth electrode;
a semiconductor member, the semiconductor member including a first semiconductor region, a second semiconductor region and a third semiconductor region, the semiconductor member being provided between the first electrode and the second electrode,
the first semiconductor region including a first outer edge region, a first partial region, a second partial region, a third partial region, and a fourth partial region, the second partial region being located between the first partial region and the first outer edge region in a second direction crossing the first direction, the third partial region being located between the first partial region and the second partial region in the second direction, the fourth partial region being located between the third partial region and a part of the second electrode in the first direction, the first partial region, the third partial region, and the fourth partial region being of a first conductivity type, a direction from the first partial region to the third electrode being along the first direction, a direction from the second partial region to the fourth electrode being along the first direction,
the second semiconductor region being of a second conductivity type, the second semiconductor region being provided between the fourth partial region and the part of the second electrode in the first direction, the second semiconductor region being located between the third electrode and the fourth electrode in the second direction, and
the third semiconductor region being of the first conductivity type, the third semiconductor region being provided between the second semiconductor region and the part of the second electrode, the third semiconductor region being electrically connected to the second electrode;

a first conductive member provided between the first partial region and the third electrode in the first direction, the first conductive member being electrically connected to the second electrode;
a second conductive member including a first conductive portion, the first conductive portion being located between the second partial region and the fourth electrode in the first direction, the second conductive member being electrically connected to the second electrode; and
an insulating member including a first insulating region and a second insulating region, the first insulating region being provided between the semiconductor member and the third electrode, between the semiconductor member and the first conductive member, and between the first conductive member and the third electrode

Assignees

• Toshiba Kk

Inventors

• Kobayashi Yusuke
• Inokuchi Tomoaki
• Gangi Hiro
• Baba Shotaro

Classifications

• H10D64/514

  characterised by the insulating layers · CPC title

• H10D62/405

  Orientations of crystalline planes · CPC title

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title

• H10D30/668

  having trench gate electrodes, e.g. UMOS transistors · CPC title

• H10D30/665

  having edge termination structures · CPC title