Method of assembling drift tube assemblies in ion implantors

Patent metadata

Field	Value
Publication number	US-12431329-B2
Application number	US-202318210524-A
Country	US
Kind code	B2
Filing date	Jun 15, 2023
Priority date	Jun 15, 2023
Publication date	Sep 30, 2025
Grant date	Sep 30, 2025

Abstract

An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator comprising at least one acceleration stage including a resonator coil coupled to a drift tube assembly, the drift tube assembly including a first drift tube coupled to a first end of a first insulting rod via interference fit, a second drift tube coupled to a first end of a second insulting rod via interference fit, and a mounting bracket coupled to a second end of the first insulting rod and to a second end of the second insulting rod via interference fit.

First claim

What is claimed is:

1. An ion implantation system comprising:
an ion source for generating an ion beam;
an end station for holding a substrate to be implanted by the ion beam; and
a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator comprising at least one acceleration stage including a resonator coil coupled to a drift tube assembly, the drift tube assembly comprising:
a first drift tube coupled to a first end of a first insulting rod via interference fit;
a second drift tube coupled to a first end of a second insulting rod via interference fit; and
a mounting bracket coupled to a second end of the first insulting rod and to a second end of the second insulting rod via interference fit.

2. The ion implantation system of claim 1 , wherein the first drift tube, the second drift tube, and the mounting bracket are formed of one of aluminum and titanium.

3. The ion implantation system of claim 1 , wherein the first insulating rod and the second insulating rod are formed of one of alumina and quartz.

4. The ion implantation system of claim 1 , wherein the first end of first insulating rod extends into a mounting hole in the first drift tube, the mounting hole having a diameter equal to or smaller than a diameter of the first insulating rod at room temperature.

5. The ion implantation system of claim 4 , wherein a diametric interference between the mounting hole in the first drift tube and the first insulating rod is in a range of 0.00010 inches to 0.0030 inches.

6. The ion implantation system of claim 1 , wherein the second end of first insulating rod extends into a mounting hole in the mounting bracket, the mounting hole having a diameter equal to or smaller than a diameter of the first insulating rod at room temperature.

7. The ion implantation system of claim 6 , wherein a diametric interference between the mounting hole in the mounting bracket and the first insulating rod is in a range of 0.00010 inches to 0.0030 inches.

8. A drift tube assembly for an ion implantation system, the drift tube assembly comprising:
a first drift tube coupled to a first end of a first insulting rod via interference fit;
a second drift tube coupled to a first end of a second insulting rod via interference fit; and
a mounting bracket coupled to a second end of the first insulting rod and to a second end of the second insulting rod via interference fit.

9. The drift tube assembly of claim 8 , wherein the first drift tube, the second drift tube, and the mounting bracket are formed of one of aluminum and titanium.

10. The drift tube assembly of claim 8 , wherein the first insulating rod and the second insulating rod are formed of one of alumina and quartz.

11. The drift tube assembly of claim 8 , wherein the first end of first insulating rod extends into a mounting hole in the first drift tube, the mounting hole having a diameter equal to or smaller than a diameter of the first insulating rod at room temperature.

12. The drift tube assembly of claim 11 , wherein a diametric interference between the mounting hole in the first drift tube and the first insulating rod is in a range of 0.00010 inches to 0.0030 inches.

13. The drift tube assembly of claim 8 , wherein the second end of first insulating rod extends into a mounting hole in the mounting bracket, the mounting hole having a diameter equal to or smaller than a diameter of the first insulating rod at room temperature.

14. The drift tube assembly of claim 13 , wherein a diametric interference between the mounting hole in the mounting bracket and the first insulating rod is in a range of 0.00010 inches to 0.0030 inches.

15. A method of assembling a drift tube assembly, the method comprising:
providing a first drift tube, a second drift tube, and a mounting bracket formed of electrically and thermally conductive materials;
providing a first insulating rod and a second insulating rod formed of an electrically and thermally insulating material;
heating the first drift tube and the second drift tube;
inserting a first end of the first insulating rod into a mounting hole of the first drift tube and inserting a first end of the second insulating rod into a mounting hole of the second drift tube;
cooling the first drift tube and the second drift tube to produce an interference fit between the first drift tube and the first insulating rod and between the second drift tube and the second insulating rod;
heating the mounting bracket;
inserting a second end of the first insulating rod into a first mounting hole of the mounting bracket and inserting a second end of the second insulating rod into a second mounting hole of the mounting bracket; and
cooling the mounting bracket to produce an interference fit between the mounting bracket and the first insulating rod and between the mounting bracket and the second insulating rod.

16. The method of claim 15 , wherein the first drift tube, the second drift tube, and the mounting bracket are formed of one of aluminum and titanium.

17. The method of claim 15 , wherein the first insulating rod and the second insulating rod are formed of one of alumina and quartz.

18. The method of claim 15 , wherein the first insulating rod and the second insulating rod are heated to a temperature in a range of 150 degrees Celsius to 350 degrees Celsius.

19. The method of claim 15 , wherein the mounting bracket is heated to a temperature in a range of 150 degrees Celsius to 350 degrees Celsius.

20. The method of claim 15 , wherein a diametric interference between the mounting hole in the first drift tube and the first insulating rod is in a range of 0.00010 inches to 0.0030 inches.

21. The method of claim 15 , wherein a diametric interference between the first mounting hole in the mounting bracket and the first insulating rod is in a range of 0.00010 inches to 0.0030 inches.

Assignees

• Applied Materials Inc

Inventors

• Webb Aaron P
• Senior Krag R
• Czajka Chris
• Carlson Charles T
• Schaller Jason M

Classifications

• H05H9/042

  Drift tube LINACS · CPC title

• H05H2277/12

  Ion implantation · CPC title

• H01J2237/08

  Ion sources · CPC title

• H01J37/3171 Primary

  for ion implantation · CPC title

• H01J37/3007 Primary

  Electron or ion-optical systems · CPC title