Dielectric, capacitor, electrical circuit, circuit board, and apparatus

Patent metadata

Field	Value
Publication number	US-12431289-B2
Application number	US-202318487722-A
Country	US
Kind code	B2
Filing date	Oct 16, 2023
Priority date	Apr 28, 2021
Publication date	Sep 30, 2025
Grant date	Sep 30, 2025

Abstract

A dielectric of the present disclosure includes a composite oxide including at least two selected from the group consisting of Nb, Bi, and Ta, wherein the following requirement (I), (II), or (III) is satisfied: (I) the composite oxide includes Nb, Bi, and Ta; (II) the composite oxide includes Nb and Bi and is amorphous; and (III) the composite oxide includes Bi and Ta and is amorphous.

First claim

What is claimed is:

1. A dielectric comprising a composite oxide including at least two selected from the group consisting of Nb, Bi, and Ta, wherein;
the following requirement (I), (II), or (III) is satisfied:
(I) the composite oxide includes Nb, Bi, and Ta;
(II) the composite oxide includes Nb and Bi and is amorphous; and
(III) the composite oxide includes Bi and Ta and is amorphous,
the composite oxide has composition represented by Nb x Bi y Ta (1-x-y) O k ,
in the composition, k is a value for maintaining electroneutrality of the composite oxide, and

the composition satisfies the following requirement (i) or (ii):
(i) x≥0.70, 0<y≤0.3, and 0<x+y<1; and
(ii) x<0.70, 0.10≤y≤0.90, and 0<x+y<1.

2. The dielectric according to claim 1 , wherein the dielectric is amorphous.

3. The dielectric according to claim 1 , wherein the dielectric includes a sputtered film.

4. The dielectric according to claim 1 , wherein the dielectric is for a capacitor.

5. A capacitor comprising:
a first electrode;
a second electrode; and
a dielectric disposed between the first electrode and the second electrode, wherein the dielectric is the dielectric according to claim 1 .

6. The capacitor according to claim 5 , wherein at least a portion of the first electrode is a porous portion.

7. The capacitor according to claim 5 , wherein the first electrode includes a valve metal.

8. The capacitor according to claim 7 , wherein the valve metal is at least one selected from the group consisting of Ta, Nb, and Bi.

9. The capacitor according to claim 5 , wherein the second electrode includes at least one selected from the group consisting of Al, Ta, Nb, Bi, gold, silver, platinum, and nickel.

10. The capacitor according to claim 6 , further comprising an electrolyte in contact with the second electrode, wherein
the electrolyte fills the porous portion and includes at least one selected from the group consisting of an electrolyte solution, an electrically conductive polymer, and manganese oxide.

11. An electrical circuit comprising the capacitor according to claim 5 .

12. A circuit board comprising the capacitor according to claim 5 .

13. An apparatus comprising the capacitor according to claim 5 .

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Kikuchi Ryosuke
• MASHIKO Hisanori

Classifications

• H01G9/032

  Inorganic semiconducting electrolytes, e.g. MnO2 · CPC title

• H01G4/306

  made by thin film techniques · CPC title

• H01G4/1254 Primary

  based on niobium or tungsteen, tantalum oxides or niobates, tantalates · CPC title

• H01G4/10

  Metal-oxide dielectrics {(H01G4/085 takes precedence)} · CPC title

• H01G4/12

  Ceramic dielectrics {(H01G4/085 takes precedence)} · CPC title