Piezoelectric coating and deposition process

Patent metadata

Field	Value
Publication number	US-12426506-B2
Application number	US-202017628255-A
Country	US
Kind code	B2
Filing date	Jul 15, 2020
Priority date	Jul 19, 2019
Publication date	Sep 23, 2025
Grant date	Sep 23, 2025

Abstract

A substrate having a surface coated with a piezoelectric coating I, the coating including A-xMexN, wherein A is at least one of B, Al, Ga, In, Tl, and Me is at least one metallic element Me from the transition metal groups 3b, 4b, 5b 6b the lanthanides, and Mg the coating I having a thickness d, and further including a transition layer wherein the ratio of atomic percentage of Me to atomic percentage of Al steadily rises along a thickness extent δ3 of said coating for which there is valid:

δ3≤ d.

First claim

What is claimed is:

1. A substrate having a surface coated with a piezoelectric coating, the coating comprising A 1-x Me x N, wherein A is at least one of B, Al, Ga, In, TI, and Me is at least one metallic element from transition metal groups 3b, 4b, 5b, 6b, lanthanides, and Mg, the coating having a thickness d, and further comprising a transition layer wherein a ratio of an atomic percentage of Me to an atomic percentage of A steadily rises along a thickness extent δ3 of said coating for which there is valid:
δ3 <d

wherein the coating further comprises a seed-layer ending at a start of said steadily rising of the transition layer, and
wherein said ratio is constant along a thickness extent δ2 of the seed-layer.

2. A substrate having a surface coated with a piezoelectric coating, the coating comprising A 1-x Me x N, wherein A is at least one of B, Al, Ga, In, Tl, and Me is at least one metallic element from transition metal groups 3b, 4b, 5b, 6b, lanthanides, and Mg, the coating having a thickness d, and further comprising a transition layer wherein a ratio of an atomic percentage of Me to an atomic percentage of A steadily rises along a thickness extent δ3 of said coating for which there is valid:
δ3 ≤d

wherein said ratio at an end of its steady rise is at least 26%.

3. The substrate according to claim 2 , wherein Me is at least one of Sc, Mg, Hf, and Y.

4. The substrate according to claim 2 , wherein Me is Sc.

5. The substrate according to claim 2 , wherein the coating further comprises a seed-layer ending at a start of said steadily rising of the transition layer, wherein said ratio is constant along a thickness extent δ2 of the seed-layer.

6. The substrate according to claim 2 , wherein the coating further comprises a top-layer starting at the end of said steadily rising of the transition layer, wherein said ratio is constant along a thickness extent δ4 of a top layer.

7. The substrate according to claim 2 , wherein said transition layer starts and/or ends at one of limiting surfaces of said coating.

8. The substrate of claim 2 , wherein
δ3 =d.

9. The substrate according to claim 2 , wherein said steadily rising of transition layer starts with said ratio being zero.

10. The substrate according to claim 2 , said steadily rising being at least approximately linear.

11. The substrate according to claim 2 , wherein the coating further comprises an adhesion layer deposited directly on the substrate surface.

12. The substrate according to claim 11 , wherein said transition layer is deposited directly on said adhesion layer.

13. The substrate according to claim 11 , wherein the adhesion layer (1) consists of at least following materials: Si, Mo, W, Pt, Ru, Ti.

14. The substrate according to claim 1 , wherein seed layer is deposited directly on one of the substrate surfaces.

15. The substrate according to claim 2 , wherein the transition layer is deposited directly on one of the substrate surfaces.

16. The substrate according to claim 2 , comprising a seed layer and an adhesion layer, said adhesion layer being deposited directly on one surface of said substrate and said seed layer being deposited directly on said adhesion layer.

17. The substrate according to claim 2 , comprising an adhesion layer being deposited directly on one surface of said substrate, said transition layer being deposited directly on said adhesion layer.

18. The substrate according to claim 2 , wherein at least the substrate surface to be coated consists of Si, SiOx or GaAs.

19. The substrate according to claim 2 , wherein the substrate comprises a precoating and the piezoelectric coating is deposited directly on the precoating.

20. A substrate having a surface coated with a piezoelectric coating, the coating comprising A 1-x Me x N, wherein A is at least one of B, Al, Ga, In, Tl, and Me is at least one metallic element from transition metal groups 3b, 4b, 5b, 6b, lanthanides, and Mg, the coating having a thickness d, and further comprising a transition layer wherein a ratio of an atomic percentage of Me to an atomic percentage of A steadily rises along a thickness extent δ3 of said coating for which there is valid:
δ3 ≤d

wherein the coating further comprises a top layer, and
wherein the surface of at least one of the transition layer and the top layer has a uniform surface quality of less than 50 spikes in any 5 μm×5 μm surface area.

21. An AMeN multichamber process system (III) comprising
a multisource-sputter (MSS)-chamber ( 24 ) comprising at least one first target ( 10 ) made from at least one element of A, and at least one second target ( 11 ) made from at least one element of Me, or at least one element of Me and at least one element of A, a gasfeed line ( 19 ), and a substrate support ( 13 , 13 ′) comprising means to fix at least one planar substrate to be coated;
at least one sputter-chamber ( 25 ) comprising an AMe-target made from at least one element of A and at least one element of Me, and a further gasfeed line;
a time and sputter-rate control unit ( 32 ) operatively connected to said process chambers ( 24 , 25 ) and constructed to time and rate-controle said targets to deposit AMeN coatings with an increasing deposition ratio of Me to A during a predetermined deposition time according to claim 1 .

22. The process system according to claim 21 , wherein the second target ( 11 ) is made from one of Sc or Sc and Al, and the AMe-target from the sputter chamber ( 25 ) is made from an AlSc-alloy or an AlSc-mixture having a Scandium ratio between 26 and 60 at %.

23. The process system according to claim 21 , wherein the first target ( 10 ) and the second target ( 11 ) are angled in an angle α from a plane in parallel to a substrate plane ( 14 ) toward the middle axis Z of a central substrate support ( 13 ), so that the deposition areas of the targets overlap on a substrate surface to be coated.

24. The process system according to claim 23 , wherein
10°≤α≤30°.

25. The process system according to claim 21 , wherein the substrate support 13 comprises means to rotate a disc-shaped substrate stationary centered with axis Z.

26. The process system according to claim 21 , wherein the first target ( 10 ) and the second target ( 11 ) are in a plane in parallel to a substrate plane 14 and substrate support 13 ′ is of a carousel type and operatively connected to a drive M′ to turn substrates circularly round axis Z′.

27. The process system according to claim 25 , wherein the control unit ( 32 ) is designed to control the speed of the drive in dependence of a higher sputter power of the first or the second target.

28. The substrate according to claim 2 , wherein said ratio at the end of its steady rise is at least 30%.

Assignees

• Evatec Ag

Inventors

• Mazzalai Andrea
• Röbisch Volker
• Heinz Bernd

Classifications

• H10N30/708 Primary

  Intermediate layers, e.g. barrier, adhesion or growth control buffer layers · CPC title

• H10N30/853

  Ceramic compositions · CPC title

• H10N30/079

  using intermediate layers, e.g. for growth control · CPC title

• C23C14/3464

  using more than one target (C23C14/56 takes precedence) · CPC title

• C23C14/0617 Primary

  AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi · CPC title