Light-emitting device and lighting apparatus

Patent metadata

Field	Value
Publication number	US-12426405-B2
Application number	US-202217885952-A
Country	US
Kind code	B2
Filing date	Aug 11, 2022
Priority date	Aug 16, 2021
Publication date	Sep 23, 2025
Grant date	Sep 23, 2025

Abstract

A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h 2 ) between the first area and the second area is no greater than 1 μm. A display apparatus and a lighting apparatus are also disclosed.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a substrate having a first surface and a second surface opposite to said first surface, said substrate being formed on said first surface with a plurality of protrusions and a plurality of recesses, said protrusions being spaced apart from one another by said recesses; and
an epitaxial unit including a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on said first surface of said substrate in such order;
wherein said first surface of said substrate has a first area not covered by said epitaxial unit, and a second area covered by said epitaxial unit, said first area being lower than said second area, a height difference (h 2 ) between said first area and said second area being no greater than 1 μm.

2. The light-emitting device according to claim 1 , wherein each of said protrusions formed on said second area has a height (h 3 ), each of said protrusions formed on said first area having a height (h 1 ), h 3 being greater than h 1 .

3. The light-emitting device according to claim 2 , wherein the height (h 1 ) of one or more of said protrusions on said first area is no greater than 1 μm.

4. The light-emitting device according to claim 2 , wherein the height (h 3 ) of each of said protrusions formed on said second area ranges from 1 μm to 3 μm.

5. The light-emitting device according to claim 2 , wherein the height (h 3 ) of each of said protrusions formed on said second area is no less than 1.5 μm.

6. The light-emitting device according to claim 2 , wherein, a ratio of the height (h 1 ) of one or more of said protrusions to the height (h 3 ) of each of said protrusions formed on said second area is no less than 0.20.

7. The light-emitting device according to claim 2 , wherein, a ratio of the height (h 1 ) of one or more of said protrusions to the height (h 3 ) of each of said protrusions formed on said second area is no greater than 0.50.

8. The light-emitting device according to claim 1 , wherein the height difference (h 2 ) between said first area and said second area is no less than 0.2 μm.

9. The light-emitting device according to claim 1 , wherein a distance between geometric centers of two adjacent ones of said protrusions formed on said first area is no less than 1 μm.

10. The light-emitting device according to claim 1 , wherein a distance between geometric centers of two adjacent ones of said protrusions formed on said second area is no greater than a distance between geometric centers of two adjacent ones of said protrusions formed on said first area.

11. The light-emitting device according to claim 1 , wherein said first area has a width that is no greater than 25 μm.

12. The light-emitting device according to claim 1 , further comprising an insulating layer that covers said first area, wherein said insulating layer that covers said first area has a thickness no less than 50 nm.

13. The light-emitting device according to claim 12 , wherein said insulating layer that covers said first area has a thickness no less than 1000 nm, and said insulating layer that covers said first area includes first sublayers and second sublayers that are alternately arranged to form a laminated structure, said first sublayers and said second sublayers being made from different materials.

14. The light-emitting device according to claim 1 , comprising two of said epitaxial units that are spaced apart from each other by said first area.

15. The light-emitting device according to claim 1 , wherein said first area surrounds said epitaxial unit.

16. The light-emitting device according to claim 1 , wherein said light-emitting device is a flip-chip light-emitting device.

17. The light-emitting device according to claim 1 , wherein said substrate and said protrusions are made of the same material.

18. The light-emitting device according to claim 1 , wherein each of said protrusions is in a cone shape.

19. The light-emitting device according to claim 1 , wherein a height difference between said recesses on said first area and said recesses on said second area is no greater than 1 μm.

20. A lighting apparatus, comprising a light-emitting device as claimed in claim 1 .

Assignees

• Quanzhou Sanan Semiconductor Tech Co Ltd

Inventors

• Shi Baojun
• Xu Jin
• Liu Shiwei
• Chen Dazhong
• Wang Shuijie
• Liu Ke
• Chang Chung-Ying
• Huang Wen-Chia
• Teng Yu-Tsai

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/932

  Plan-view shape, i.e. in top view · CPC title

• H10W72/252

  comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title