Silicon carbide semiconductor device including a side silicide layer and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-12426329-B2
Application number	US-202217981049-A
Country	US
Kind code	B2
Filing date	Nov 4, 2022
Priority date	Nov 12, 2021
Publication date	Sep 23, 2025
Grant date	Sep 23, 2025

Abstract

A silicon carbide semiconductor device includes a silicon carbide semiconductor layer and a side silicide layer. The silicon carbide semiconductor layer includes a silicon carbide single crystal and has a main surface, a rear surface opposite to the main surface, and a side surface connecting the main surface and the rear surface and formed by a cleavage plane. The silicon carbide semiconductor layer further includes a modified layer. The modified layer forms a part of the side surface located close to the rear surface and has an atomic arrangement structure of silicon carbide different from an atomic arrangement structure of the silicon carbide single crystal. The side silicide layer includes a metal silicide that is a compound of a metal element and silicon. The side silicide layer is disposed on the side surface of the silicon carbide semiconductor layer and is adjacent to the modified layer.

First claim

What is claimed is:

1. A silicon carbide semiconductor device comprising:
a silicon carbide semiconductor layer including a silicon carbide single crystal and having a main surface, a rear surface opposite to the main surface, and a side surface connecting the main surface and the rear surface and formed by a cleavage plane, the silicon carbide semiconductor layer further including a modified layer, the modified layer forming a part of the side surface located close to the rear surface and having an atomic arrangement structure of silicon carbide different from an atomic arrangement structure of the silicon carbide single crystal; and
a side silicide layer including a metal silicide that is a compound of a metal element and silicon, the side silicide layer disposed on the side surface of the silicon carbide semiconductor layer and covering the modified layer.

2. The silicon carbide semiconductor device according to claim 1 , further comprising
a rear silicide layer disposed on the rear surface of the silicon carbide semiconductor layer and including a metal silicide that is a compound of a metal element and silicon, wherein
the side silicide layer continues to the rear silicide layer.

3. The silicon carbide semiconductor device according to claim 1 , wherein
the metal silicide includes at least one element selected from a group consisting of Ni, Ti, Mo, Ta, Pt and Co as the metal element.

4. The silicon carbide semiconductor device according to claim 1 , wherein
the side surface of the silicon carbide semiconductor layer includes a plurality of side surfaces,
the modified layer forms a part of each of the plurality of side surfaces close to the rear surface, and
the side silicide layer is arranged continuously over all of the plurality of side surfaces.

5. A silicon carbide semiconductor device comprising:
a silicon carbide semiconductor layer including a portion made of a silicon carbide single crystal and having a main surface, a rear surface opposite to the main surface, and a side surface connecting the main surface and the rear surface and formed by a cleavage plane, the silicon carbide semiconductor layer further including a modified layer, the modified layer forming a part of the side surface located close to the rear surface and having an atomic arrangement structure of silicon carbide different from an atomic arrangement structure of the silicon carbide single crystal; and
a side silicide layer including a metal silicide that is a compound of a metal element and silicon, the side silicide layer disposed on the side surface of the silicon carbide semiconductor layer, being adjacent to a side of the modified layer that is close to the rear surface, and facing and being in contact with the portion of the silicon carbide semiconductor layer made of the silicon carbide single crystal in a direction parallel to the main surface.

6. The silicon carbide semiconductor device according to claim 5 , further comprising
a rear silicide layer disposed on the rear surface of the silicon carbide semiconductor layer and including a metal silicide that is a compound of a metal element and silicon, wherein
the side silicide layer continues to the rear silicide layer.

7. The silicon carbide semiconductor device according to claim 5 , wherein
the metal silicide includes at least one element selected from a group consisting of Ni, Ti, Mo, Ta, Pt and Co as the metal element.

8. The silicon carbide semiconductor device according to claim 5 , wherein
the side surface of the silicon carbide semiconductor layer includes a plurality of side surfaces,
the modified layer forms a part of each of the plurality of side surfaces close to the rear surface, and
the side silicide layer is arranged continuously over all of the plurality of side surfaces.

9. A manufacturing method of a silicon carbide semiconductor device, comprising:
preparing a silicon carbide wafer including a silicon carbide semiconductor layer, the silicon carbide semiconductor layer including a silicon carbide single crystal and having a main surface and a rear surface opposite to the main surface;
forming a groove on the rear surface of the silicon carbide semiconductor layer along a line to be cut to generate a crack;
forming a metal film on a wall surface that forms the groove;
forming a silicide layer including a metal silicide on a portion of the silicon carbide semiconductor layer close to the wall surface by reacting silicon contained in the silicon carbide semiconductor layer with a metal element contained in the metal film by heat treatment; and
applying stress to the silicon carbide wafer to propagate the crack along a direction orthogonal to the main surface, and cutting the silicon carbide wafer into a plurality of chips.

10. The manufacturing method according to claim 9 , wherein
the forming the metal film includes forming the metal film over the rear surface of the silicon carbide semiconductor layer and the wall surface, and
the forming the silicide layer includes forming the silicide layer over the rear surface of the silicon carbide semiconductor layer and the wall surface.

Assignees

• Denso Corp
• Toyota Motor Co Ltd
• MIRISE Technologies Corporation

Inventors

• Tsuma Hiroki
• Nagumo Yuji
• Uecha Masashi
• Kumazawa Teruaki

Classifications

• H10D64/0115

  to silicon carbide · CPC title

• H10P90/12

  Preparing bulk and homogeneous wafers · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P14/3458

  Monocrystalline · CPC title

• H10P14/3408

  Silicon carbide · CPC title