Switching device and memory device including the same

Patent metadata

Field	Value
Publication number	US-12426275-B2
Application number	US-202117522197-A
Country	US
Kind code	B2
Filing date	Nov 9, 2021
Priority date	Aug 4, 2021
Publication date	Sep 23, 2025
Grant date	Sep 23, 2025

Abstract

Provided are a switching device and a memory device including the switching device. The switching device includes first and second electrodes, and a switching material layer provided between the first and second electrodes and including a chalcogenide. The switching material layer includes a core portion and a shell portion covering a side surface of the core portion. The switching layer includes a material having an electrical resistance greater than an electrical resistance of the core portion, for example in at least one of the core portion or the shell portion.

First claim

What is claimed is:

1. A switching device comprising:
first and second electrodes vertically apart from each other;
wherein the first electrode is a top electrode and the second electrode is a bottom electrode; and
a switching material layer between the first and second electrodes,
wherein the switching material layer comprises a core portion and a shell portion, the shell portion covering a side surface of the core portion and comprising a material having an electrical resistance greater than an electrical resistance of the core portion, the core portion comprising a body having a shape of a filled-in cylinder, wherein
the filled-in cylindrical body of the core portion includes a chalcogenide, and
the shell portion includes a chalcogenide, and
wherein in a cross-sectional view, the shell portion further covers a lower surface of the core portion with respect to the first and second electrode.

2. The switching device of claim 1 ,
wherein the switching material layer comprises a chalcogen element and at least one of Ge, As, or Sb.

3. The switching device of claim 2 ,
wherein the chalcogen element comprises at least one of Se or Te.

4. The switching device of claim 2 ,
wherein the switching material layer further comprises a dopant.

5. The switching device of claim 4 ,
wherein the dopant comprises at least one of In, Al, C, B, Sr, Ga, O, N, Si, Ga, or P.

6. The switching device of claim 1 ,
wherein at least one of the core portion and the shell portion have different material compositions or comprise different materials.

7. A switching device comprising:
first and second electrodes vertically apart from each other;
wherein the first electrode is a top electrode and the second electrode is a bottom electrode; and
a switching material layer between the first and second electrodes,
wherein the switching material layer comprises a core portion and a shell portion, the shell portion covering a side surface of the core portion and comprising a material having an electrical resistance greater than an electrical resistance of the core portion, the core portion comprising a body having a shape of a filled-in cylinder, wherein
the filled-in cylindrical body of the core portion includes a chalcogenide, and
the shell portion includes a chalcogenide, and
wherein in a cross-sectional view, the shell portion covers an upper surface of the core portion with respect to the first and second electrode.

8. The switching device of claim 1 ,
wherein the switching material layer further comprises an interface layer on an upper surface of the core portion and having at least one of one of a p-n junction with the core portion or a Schottky junction with the core portion.

9. The switching device of claim 1 ,
wherein the core portion comprises a plurality of core portions and the shell portion comprises a plurality of shell portions.

10. The switching device of claim 1 ,
wherein the core portion comprises a material having an energy bandgap less than an energy bandgap of the shell portion.

11. The switching device of claim 1 ,
wherein the core portion comprises a material having a trap concentration greater than a trap concentration of the shell portion.

12. The switching device of claim 1 ,
wherein a cross-sectional size of the core portion is 50% or more of a cross-sectional size of the switching material layer.

13. A two-terminal device comprising:
a first terminal which is a top terminal,
a second terminal which is a bottom terminal,
a switching material layer between the first terminal and the second terminal, wherein the switching material layer comprises a core portion and a shielding portion, the shielding portion coaxial with a filled-in cylindrical body of the core portion and comprising a material having an electrical resistance greater than an electrical resistance of the core portion,
the filled-in cylindrical body of the core portion comprises a chalcogenide,
the shielding portion comprises a chalcogenide, and
in a cross-sectional view, the shielding portion surrounds a bottom surface of the core portion with respect to the first and second terminals.

14. The two-terminal device of claim 13 , wherein the shielding portion surrounds a sidewall of the core portion.

15. The two-terminal device of claim 13 , wherein at least one of the two terminals directly contact at least one of the shielding portion and the core portion.

16. A memory cell comprising:
the two-terminal device of claim 13 , and
a memory material layer directly connected to one of the two terminals of the two-terminal device.

17. The memory cell of claim 16 , further comprising:
a third terminal connected to the memory material layer.

18. An electronic device comprising:
the memory cell of claim 17 ; and
at least one active or passive device.

19. The switching device of claim 1 , wherein the shell portion surrounds a bottom of the core portion.

20. The switching device of claim 1 , wherein both the shell portion and the core portion include Ge, As, Se, and a dopant.

21. The switching device of claim 20 , wherein the dopants included in the shell portion and the core portion include at least one of In, Al, C, B, Sr, Ga, O, N, Si, Ga, or P.

22. The switching device of claim 1 , wherein the shell portion contacts a bottom surface of the second electrode.

23. The switching device of claim 22 , wherein the shell portion directly contacts the bottom surface of the second electrode.

24. The switching device of claim 1 , wherein
the core portion includes a first core portion and a second core portion,
the shell portion includes a first shell portion and a second shell portion, and
the second core portion is between the first shell portion and the second shell portion.

25. The switching device of claim 24 , wherein a bottom surface of the second shell portion contacts a top surface of the second electrode.

26. The switching device of claim 25 , wherein the bottom surface of the second shell portion directly contacts the top surface of the second electrode.

27. The two-terminal device of claim 13 , wherein both the shielding portion and the core portion include Ge, As, Se, and a dopant.

28. The two-terminal device of claim 27 , wherein the dopants included in the shielding portion and the core portion include at least one of In, Al, C, B, Sr, Ga, O, N, Si, Ga, or P.

29. The two-terminal device of claim 13 , wherein the shielding portion contacts a bottom surface of one of the two terminals.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choi Minwoo
• Koo Bonwon
• Park Yongyoung
• Sung Hajun
• Ahn Dongho
• Yang Kiyeon
• Yang Wooyoung
• Lee Changseung

Classifications

• G11C13/0004

  comprising amorphous/crystalline phase transition cells · CPC title

• H10N70/882

  Compounds of sulfur, selenium or tellurium, e.g. chalcogenides · CPC title

• H10N70/021

  Formation of switching materials, e.g. deposition of layers · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title