Method for producing an electronic component which includes a self-assembled monolayer
US-2021257569-A1 · Aug 19, 2021 · US
US12424277B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12424277-B2 |
| Application number | US-202017770311-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 20, 2020 |
| Priority date | Oct 21, 2019 |
| Publication date | Sep 23, 2025 |
| Grant date | Sep 23, 2025 |
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The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.
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The invention claimed is: 1. An electronic switching device ( 100 ) comprising, in this sequence, a first electrode ( 102 ), a molecular layer ( 103 ) bonded to the first electrode, and a second electrode ( 104 ), where the first and second electrodes comprise a metal nitride, and where the molecular layer is formed from one or more compounds selected from formulae IA, IB and IC: R 1A -(A 1 -Z 1 ) r —B 1 —(Z 2 -A 2 ) s -Sp A -G (IA) D 1 -Z D -(A 1 -Z 1 ) r —B 1 —(Z 2 -A 2 ) s -Sp-G (IB) R 1C -(A 1 -Z 1 ) r —B 1 —Z L -A 2C -(Z 3 -A 3 ) s -G (IC) in which R 1A , R 1C denote straight chain or branched alkyl or alkoxy each having 1 to 20 C atoms, where one or more CH 2 groups in these radicals may each be replaced, independently of one another, by —C≡C—, —CH═CH—, —O—, —S—, —CF 2 O—, —OCF 2 —, —CO—O—, —O—CO—, —SiR 0 R 00 —, —NH—, —NR 0 — or —SO 2 — in such a way that O atoms are not linked directly to one another, and in which one or more H atoms may be replaced by halogen, CN, SCN or SF 5 , where R 1C alternatively denotes a group D 1 -Z D , Z D has one of the meanings of Z 1 , Z 2 and Z 3 or denotes a spacer group, Z 1 , Z 2 , Z 3 on each occurrence, identically or differently, denote a single bond, —CF 2 O—, —OCF 2 —, —CF 2 S—, —SCF 2 —, —CH 2 O—, —OCH 2 —, —C(O)O—, —OC(O)—, —C(O)S—, —SC(O)—, —(CH 2 ) n1 —, —(CF 2 ) n2 —, —CF 2 —CH 2 —, —CH 2 —CF 2 —, —CH═CH—, —CF═CF—, —CF═CH—, —CH═CF—, —(CH 2 ) n3 O—, —O(CH 2 ) n4 —, —C≡C—, —O—, —S—, —CH═N—, —N═CH—, —N═N—, —N═N(O)—, —N(O)═N— or —N═C—C═N—, n1, n2, n3, n4 identically or differently, are 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, Z L denotes —O—, —S—, —CH 2 —, —C(O)—, —CF 2 —, —CHF—, —C(R x ) 2 —, —S(O)— or —SO 2 —, R 0 , R 00 , identically or differently, denote an alkyl or alkoxy radical having 1 to 15 C atoms, in which, in addition, one or more H atoms may be replaced by halogen, D 1 denotes a diamondoid radical, A 1 , A 2 , A 3 on each occurrence, identically or differently, denote an aromatic, heteroaromatic, alicyclic or heteroaliphatic ring having 4 to 25 ring atoms, which may also contain condensed rings and which may be mono- or polysubstituted by Y, A 2C denotes an aromatic or heteroaromatic ring having 5 to 25 ring atoms, which may also contain condensed rings and which may be mono- or polysubstituted by Y C , Y on each occurrence, identically or differently, denotes F, Cl, CN, SCN, SF 5 or straight-chain or branched, in each case optionally fluorinated alkyl, alkoxy, alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy or alkoxycarbonyloxy having 1 to 12 C atoms, Y C on each occurrence, identically or differently, denotes F, Cl, CN, SCN, SF 5 or straight-chain or branched, in each case optionally fluorinated alkyl, alkoxy, alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy or alkoxycarbonyloxy having 1 to 12 C atoms, or cycloalkyl or alkylcycloalkyl each having 3 to 12 C atoms, B 1 denotes in which R 0 and R 00 denote F or alkyl having 1 to 6 C atoms, where the groups may be oriented in both directions, L 1 to L 3 , independently of one another, denote F, Cl, Br, I, CN, SF 5 , CF 3 or OCF 3 , where L 3 may alternatively also denote H, Sp A denotes a spacer group or a single bond, Sp denotes a spacer group, G denotes —OH, —CH(CH 2 OH) 2 , —C(CH 2 OH) 3 , —SH, —SO 2 OH, —OP(O)(OH) 2 , —PO(OH) 2 , —C(OH)(PO(OH) 2 ) 2 , —COOH, —Si(OR x ) 3 , —SiCl 3 , SO 2 OR V , —OP(O)(OR V ) 2 , —PO(OR V ) 2 , —C(OH)(PO(OR V ) 2 ) 2 , —COOR V or —Si(OR V ) 3 , R V denotes secondary or tertiary alkyl having 1 to 20 C atoms, R x denotes straight-chain or branched alkyl having 1 to 6 C atoms, and r, s on each occurrence, identically or differently, are 0, 1 or 2, wherein at least one of the groups Sp A and R 1A of the compounds of formula IA, or at least one of the groups Z D and Sp of the compounds of formula IB, or the group R 1C of the compounds of formula IC, respectively, is chiral. 2. The electronic switching device ( 100 ) according to claim 1 , wherein the first electrode ( 102 ) and the second electrode ( 104 ), identically or differently, comprise a metal nitride selected from the group consisting of CrN, HfN, MoN, NbN, TiN, TaN, WN, WCN, VN and ZrN. 3. The electronic switching device ( 100 ) according to claim 1 , wherein the second electrode ( 104 ) consists of TiN. 4. The electronic switching device ( 100 ) according to claim 1 , wherein an interlayer ( 105 ) is arranged between the first electrode ( 102 ) and the molecular layer ( 103 ), where the interlayer ( 105 ) comprises an oxidic material and where the molecular layer ( 103 ) is bonded to said oxidic material, and where the first electrode ( 102 ) and the interlayer ( 105 ) are operable as a first electrode ( 102 ′). 5. The electronic switching device ( 100 ) according to claim 4 , wherein the oxidic interlayer comprises TiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , or SiO 2 . 6. The electronic switching device ( 100 ) according to claim 1 , wherein the group G in formula IA, IB or IC denotes —PO(OH) 2 or —C(OH)(PO(OH) 2 ) 2 . 7. The electronic switching device ( 100 ) according to claim 1 , wherein the group G of the compounds of the formulae IA, IB or IC is bonded to the first electrode ( 102 ) by chemisorption or covalently. 8. The electronic switching device ( 100 ) according to claim 1 , wherein the molecular layer ( 103 ) is a molecular monolayer. 9. An electronic component comprising one or more switching devices ( 100 ) according to claim 1 . 10. The electronic component according to claim 9 , wherein the component has a multitude of switching devices ( 100 ), where the first electrodes ( 102 ) and second electrodes ( 104 ) of the switching devices ( 100 ) form a crossbar array. 11. The electronic component according to claim 9 , wherein the switching devices ( 100 ) are configured to change between a state having high electrical resistance and a state having low electrical resistance, where the quotient between high electrical resistance and low electrical resistance is between 10 and 100,000. 12. The electronic component according to claim 9 , wherein the component is a resistive memory device, a sensor, a field-effect transistor or a Josephson junction. 13. A method for operating an electronic component according to claim 9 , wherein one or more of the switching devices ( 100 ) of the electronic component is switched into a state of high electrical resistance by setting a corresponding first electrode ( 102 ) to a first electrical potential and setting a corresponding second electrode ( 104 ) to a second electrical potential, where the value of the voltage between the two electrodes ( 102 , 104 ) is greater than a first switching voltage and the first potential is greater than the second potential, a switching device ( 100 ) of the electronic component is switched into a state of low electrical resistance by setting a corresponding first electrode ( 102 ) to a third electrica
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