Ferrite particles, electrophotographic developer carrier core material, electrophotographic developer carrier, and electrophotographic developer
US-2022155701-A1 · May 19, 2022 · US
US12422763B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12422763-B2 |
| Application number | US-202117915348-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 17, 2021 |
| Priority date | Mar 31, 2020 |
| Publication date | Sep 23, 2025 |
| Grant date | Sep 23, 2025 |
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The present invention relates to a ferrite particle containing a crystal phase component containing a perovskite crystal represented by a compositional formula: RZrO 3 (provided that R represents an alkaline earth metal element), having a surface roughness Rz of 2.0 μm or more and 4.5 μm or less, and satisfying the following formulas: 6.5≤log H 1000 ≤8.5 and 0.80≤log H 1000 /log H 100 ≤1.00. The ferrite particle can be used as an electrophotographic developer carrier core material. In addition, an electrophotographic developer carrier and an electrophotographic developer can be obtained.
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The invention claimed is: 1. A ferrite particle, comprising a crystal phase component comprising a perovskite crystal represented by the compositional formula: RZrO 3 (provided that R represents an alkaline earth metal element), having a surface roughness Rz of 2.0 μm or more and 4.5 μm or less, and satisfying the following formulas: 6.5≤log H 1000 ≤8.5, and 0.80≤log H 1000 /log H 100 ≤1.00, where log H 1000 : logarithmic value (log(Ω) of a resistance value H 1000 (Ω) of the ferrite particle when an applied voltage of 1,000 V is applied at a distance between electrodes of 2 mm in a high-temperature and high-humidity environment (30° C., relative humidity 80%), and log H 100 : logarithmic value (log(Ω) of a resistance value H 100 (Ω) of the ferrite particle when an applied voltage of 100 V is applied at a distance between electrodes of 2 mm in the high-temperature and high-humidity environment (30° C., relative humidity 80%). 2. The ferrite particle according to claim 1 , wherein the surface roughness Rz is 2.5 μm or more and 4.2 μm or less. 3. The ferrite particle according to claim 1 , satisfying the following formulas: 6.7≤log H 1000 ≤8.2, and 0.85≤log H 1000 /log H 100 ≤1.00. 4. The ferrite particle according to claim 1 , wherein the R is at least one element selected from the group consisting of Sr, Ca, and Ba. 5. The ferrite particle according to claim 1 , comprising the crystal phase component comprising the perovskite crystal in an amount of 0.05% by mass or more and 4.00% by mass or less when a phase composition analysis of a crystal phase constituting the ferrite particle is performed by a Rietveld analysis of an X-ray diffraction pattern. 6. The ferrite particle according to claim 1 , wherein the ferrite particle is a spinel ferrite particle having a crystal phase component comprising a spinel crystal represented by the compositional formula: (MnO)x(MgO)y(Fe 2 O 3 )z (provided that 15≤x≤50, 2≤y≤35, 45≤z≤60, x+y+z=100 (mol %)) as a main composition. 7. An electrophotographic developer carrier core material, comprising the ferrite particle described in claim 1 . 8. An electrophotographic developer carrier, comprising the ferrite particle described in claim 1 and a resin coating layer provided on a surface of the ferrite particle. 9. An electrophotographic developer, comprising the electrophotographic developer carrier described in claim 8 and a toner. 10. The electrophotographic developer according to claim 9 , used as a replenishment developer.
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