Perovskite solar cell and method of making the same

US12419190B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12419190-B2
Application numberUS-202117904578-A
CountryUS
Kind codeB2
Filing dateFeb 22, 2021
Priority dateFeb 20, 2020
Publication dateSep 16, 2025
Grant dateSep 16, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of forming a photovoltaic device comprising a perovskite photovoltaic cell, particularly a method of forming a perovskite solar cell (PSC), is disclosed having a hole transport layer comprising an additive that may result in one or more of reduced formation of crystalline domains in the hole transport layer; reduced size of pinholes in the hole transport layer; improved dopant homogeneity and increased hydrophobicity of the hole transport layer. Also disclosed are PSCs so formed, showing one or more improved properties.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of forming a photovoltaic device, comprising: providing a substrate; forming a perovskite photovoltaic cell on the substrate comprising forming a hole transport layer, the hole transport layer comprising a hole transport material selected from the group consisting of a spirobifluorene and a polymeric amine, and the hole transport layer having an additive which is an alkylthiol and/or disulphide that results in one or more of the following: reduced formation of crystalline domains in the hole transport layer; reduced size of pinholes in the hole transport layer; and increased hydrophobicity of the hole transport layer. 2. The method according to claim 1 , wherein the additive prevents the formation of crystalline domains in the hole transport layer, reduces a pinhole size in the hole transport layer, and increases a hydrophobicity of the hole transport layer. 3. The method according to claim 1 , wherein the hole transport layer has a lower HOMO energy level compared to a hole transport layer in absence of the additive. 4. The method according to claim 1 , wherein forming the hole transport layer comprises applying a hole transport layer precursor solution comprising the additive onto the perovskite photovoltaic cell. 5. The method according to claim 1 , wherein the alkylthiol is 1-dodecanethiol. 6. The method according to claim 1 , wherein the disulfide is didodecyl disulphide. 7. The method according to claim 1 , wherein the hole transport layer comprises a dopant. 8. The method according to claim 1 , wherein the hole transport layer comprises 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine) 9,9′-spirobifluorene (Spiro-MeOTAD), poly-triarylamine (PTAA), 4-tert-butylpyridine (tBP) and/or a (bis(trifluoromethane)sulfonimidelithium salt (TFSI). 9. A photovoltaic device comprising: a substrate; a perovskite photovoltaic cell comprising a hole transport layer, the hole transport layer comprising a hole transport material selected from the group consisting of a spirobifluorene and a polymeric amine, and the hole transport layer having an additive which is an alkylthiol and/or disulphide that that results in one or more of the following: reduced formation of crystalline domains in the hole transport layer; reduced size of pinholes in the hole transport layer; and increased hydrophobicity of the hole transport layer. 10. The device according to claim 9 , wherein the hole transport layer has a lower HOMO energy level compared to the hole transport layer in the absence of the additive. 11. The device according to claim 9 , wherein the spirobifluorene is 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine) 9,9′-spirobifluorene (Spiro-MeOTAD). 12. The device according to claim 9 , wherein the hole transport layer comprises 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine) 9,9′-spirobifluorene (Spiro-MeOTAD), poly-triarylamine (PTAA), 4-tert-butylpyridine (tBP) and/or a (bis(trifluoromethane)sulfonimidelithium salt (TFSI).

Assignees

Inventors

Classifications

  • comprising heterojunctions between organic semiconductors and inorganic semiconductors · CPC title

  • comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers · CPC title

  • Photovoltaic [PV] devices · CPC title

  • Constructional details relating to the organic devices covered by this subclass · CPC title

  • comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom · CPC title

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What does patent US12419190B2 cover?
A method of forming a photovoltaic device comprising a perovskite photovoltaic cell, particularly a method of forming a perovskite solar cell (PSC), is disclosed having a hole transport layer comprising an additive that may result in one or more of reduced formation of crystalline domains in the hole transport layer; reduced size of pinholes in the hole transport layer; improved dopant homogene…
Who is the assignee on this patent?
Newsouth Innovations Pty Ltd
What technology area does this patent fall under?
Primary CPC classification H10K85/50. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 16 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).