Hole-transport layer material, electron-blocking layer material, electron-transport layer material, hole-blocking layer material, light-emitting device, light-emitting apparatus, electronic device, and lighting device

Patent metadata

Field	Value
Publication number	US-12419155-B2
Application number	US-202217739260-A
Country	US
Kind code	B2
Filing date	May 9, 2022
Priority date	May 13, 2021
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

An organic semiconductor device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-transport layer and alight-emitting layer. The hole-transport layer is positioned between the anode and the light-emitting layer. The hole-transport layer is not in contact with the anode. The hole-transport layer includes a transport layer material for a light-emitting device and the GSP_slope that is a potential gradient of a surface potential of an evaporated film of the material is higher than or equal to 20 (mV/nm).

First claim

What is claimed is:

1. A hole transport layer material for a light-emitting device,
wherein a GSP_slope that is a potential gradient of a surface potential of an evaporated film of the hole transport layer material is higher than or equal to 20 mV/nm.

2. The hole transport layer material for a light-emitting device, according to claim 1 ,
wherein the GSP_slope is lower than or equal to 100 mV/nm.

3. The hole transport layer material for a light-emitting device, according to claim 1 ,
wherein an ordinary ray refractive index of the hole transport layer material with respect to light with a wavelength of 450 nm is higher than or equal to 1.50 and lower than or equal to 1.75.

4. The hole transport layer material for a light-emitting device, according to claim 1 ,
wherein an ordinary ray refractive index of the hole transport layer material with respect to light with a wavelength of 633 nm is higher than or equal to 1.45 and lower than or equal to 1.70.

5. The hole transport layer material for a light-emitting device, according to claim 1 ,
wherein a glass transition temperature (Tg) of the hole transport layer material is higher than or equal to 100° C.

6. The hole transport layer material for a light-emitting device, according to claim 1 , wherein the hole transport layer material comprises at least three substituents selected from a chain alkyl group having 2 to 5 carbon atoms and a cycloalkyl group having 6 to 12 carbon atoms.

7. The hole transport layer material for a light-emitting device, according to claim 6 ,
wherein the chain alkyl group is a chain alkyl group having a branch formed of 3 to 5 carbon atoms.

8. The hole transport layer material for a light-emitting device, according to claim 6 ,
wherein the chain alkyl group is a t-butyl group.

9. The hole transport layer material for a light-emitting device, according to claim 1 ,
wherein a percentage of carbon atoms forming bonds by sp 3 hybrid orbitals in a total number of carbon atoms in a molecule is higher than or equal to 23% and lower than or equal to 55%.

10. The hole transport layer material for a light-emitting device, according to claim 1 ,
wherein an integral value of signals lower than 4 ppm exceeds an integral value of signals at 4 ppm or higher in a 1H-NMR measurement of the hole transport layer material.

11. The hole transport layer material for a light-emitting device, according to claim 1 ,
wherein the hole transport layer material has a hole-transport property.

12. The hole transport layer material for a light-emitting device, according to claim 11 ,
wherein the hole transport layer material is arylamine.

13. The hole transport layer material for a light-emitting device, according to claim 11 ,
wherein, when the hole transport layer material comprises a condensed aromatic hydrocarbon ring, the condensed aromatic hydrocarbon ring is a bicyclic condensed aromatic ring or a tricyclic condensed aromatic ring and a total number of condensed aromatic hydrocarbon rings in a molecule of the hole transport layer material is one or two.

14. The hole transport layer material for a light-emitting device, according to claim 11 ,
wherein the hole transport layer material comprises two or less fluorene skeletons in a molecule.

15. An electron blocking layer material comprising the hole transport layer material according to claim 11 .

16. A light-emitting device comprising:
an anode;
a cathode; and
an EL layer between the anode and the cathode,
wherein the EL layer comprises a hole-transport layer and a light-emitting layer,
wherein the hole-transport layer is positioned between the anode and the light-emitting layer,
wherein the hole-transport layer is not in contact with the anode,
wherein the hole-transport layer comprises a hole transport layer material, and
wherein a GSP_slope that is a potential gradient of a surface potential of an evaporated film of the hole transport layer material is higher than or equal to 20 mV/nm.

17. The light-emitting device according to claim 16 ,
wherein the hole-transport layer is in contact with the light-emitting layer.

18. An electronic device comprising:
the light-emitting device according to claim 16 ; and
at least one of a sensor, an operation button, a speaker, and a microphone.

19. A light-emitting apparatus comprising:
the light-emitting device according to claim 16 ; and
at least one of a transistor and a substrate.

20. A lighting device comprising:
the light-emitting device according to claim 16 ; and
a housing.

21. A light-emitting device comprising:
an anode;
a cathode; and
an EL layer between the anode and the cathode,
wherein the EL layer comprises a hole-injection layer, a hole-transport layer, an electron-blocking layer, and a light-emitting layer,
wherein the hole-injection layer, the hole-transport layer, and the electron-blocking layer are positioned between the anode and the light-emitting layer,
wherein the electron-blocking layer is in contact with the light-emitting layer,
wherein the hole-injection layer is in contact with the anode,
wherein the hole-transport layer comprises a hole transport layer material,
wherein the electron-blocking layer comprises an electron blocking layer material, and
wherein a GSP_slope of an evaporated film of the hole transport layer material is lower than a GSP slope of an evaporated film of the electron blocking layer material.

Assignees

• Semiconductor Energy Lab

Inventors

• Watabe Takeyoshi
• Seo Hiromi
• Ueda Airi
• Kawano Yuta
• Kubota Tomohiro
• Kitano Yasushi
• Tosu Takao
• Ohsawa Nobuharu
• Seo Satoshi

Classifications

• H10K50/181

  Electron blocking layers · CPC title

• H10K50/18

  Carrier blocking layers · CPC title

• H10K39/30

  Devices controlled by radiation · CPC title

• H10K2101/00

  Properties of the organic materials covered by group H10K85/00 · CPC title

• H10K30/353

  comprising blocking layers, e.g. exciton blocking layers · CPC title