Photodetector

Patent metadata

Field	Value
Publication number	US-12419126-B2
Application number	US-202318378504-A
Country	US
Kind code	B2
Filing date	Oct 10, 2023
Priority date	Oct 18, 2016
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

First claim

What is claimed is:

1. A light detecting device, comprising:
a first semiconductor layer, including:
a first avalanche photodiode, including:
a first semiconductor region of a first conductivity type; and
a second semiconductor region of a second conductivity type, wherein the first avalanche photodiode is disposed in a pixel region of the light detecting device;

a first isolation region;
a third semiconductor region of the second conductivity type, wherein the third semiconductor region is disposed in a peripheral region; and
a light shielding film,

wherein the first isolation region is disposed between the pixel region and the peripheral region,
wherein a first portion of the light shielding film is disposed in the first isolation region and a second portion of the light shielding film is disposed on the third semiconductor region, and
wherein a portion of the light shielding film is in direct contact with at least a portion of a surface of the third semiconductor region.

2. The light detecting device of claim 1 , further comprising:
a wiring layer, the wiring layer including:
a first wiring, wherein the first wiring is coupled to the first semiconductor region;
a second wiring, wherein the second wiring is coupled to the second semiconductor region; and
a third wiring, wherein the third wiring is coupled to the third semiconductor region.

3. The light detecting device of claim 2 , wherein a first voltage applied to the second wiring is same as a second voltage applied to the third wiring.

4. The light detecting device of claim 2 , wherein the wiring layer is on a side of the first semiconductor layer opposite a light incident surface side of the first semiconductor layer.

5. The light detecting device of claim 1 , wherein the light shielding film includes at least one of tungsten, aluminum, copper, or polysilicon.

6. The light detecting device of claim 1 , wherein the first conductivity type is opposite the second conductivity type.

7. The light detecting device of claim 2 , wherein the first semiconductor layer is part of a first chip, the light detecting device further comprising:
a second chip.

8. The light detecting device of claim 7 , wherein the second chip includes a fourth wiring, and a fifth wiring, wherein the fourth wiring is electrically connected to the first wiring, and wherein the fifth wiring is electrically connected to the second wiring.

9. The light detecting device of claim 8 , wherein the second chip is stacked on the first chip.

10. The light detecting device of claim 8 , wherein the first, second, third, fourth, and fifth wirings are one of copper or aluminum.

11. The light detecting device of claim 8 , wherein the first wiring is directly bonded to the fourth wiring, and wherein the second wiring is directly bonded to the fifth wiring.

12. The light detecting device of claim 2 , wherein the first, second, and third wirings are in a same layer of the wiring layer.

13. The light detecting device of claim 1 , wherein the first isolation region extends from a light incident surface of the first semiconductor layer to a surface of the first semiconductor layer opposite the light incident surface.

14. The light detecting device of claim 1 , wherein the light shielding film is electrically conductive.

15. The light detecting device of claim 14 , wherein the light shielding film is formed from a metal.

16. The light detecting device of claim 14 , wherein the light shielding film electrically connects the first isolation region and the third semiconductor region.

17. The light detecting device of claim 1 , wherein the first isolation region includes a trench filled with an electrically conductive material.

18. The light detecting device of claim 1 , wherein the first isolation region surrounds the first semiconductor region.

19. The light detecting device of claim 18 , further comprising:
an on-chip lens, wherein the on-chip lens is disposed on a light incident surface side of the first semiconductor layer, and wherein the on-chip lens is adjacent an area encompassing the first avalanche photodiode.

20. The light detecting device of claim 1 , wherein a third portion of the light shielding film is disposed on a planarizing film.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Otake Yusuke
• Matsumoto Akira
• Yamamoto Junpei
• NAITO Ryusei
• Nakamizo Masahiko
• Wakano Toshifumi

Classifications

• H10F39/8063

  Microlenses · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/331

  for filtering or shielding light, e.g. multicolour filters for photodetectors · CPC title

• H10F39/8057

  Optical shielding · CPC title