Surface processing apparatus and surface processing method for SiC substrate

Patent metadata

Field	Value
Publication number	US-12417909-B2
Application number	US-202217750450-A
Country	US
Kind code	B2
Filing date	May 23, 2022
Priority date	May 25, 2021
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface processing apparatus for the SiC substrate includes a surface processing pad and a power supply device. The surface processing pad includes a grinding wheel layer. The grinding wheel layer is disposed facing a workpiece surface of the SiC substrate. The power supply device passes a pulsed current having a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in the presence of an electrolyte.

First claim

What is claimed is:

1. A surface processing apparatus for a SiC substrate, comprising:
a surface processing pad including a grinding wheel layer disposed facing a workpiece surface of the SiC substrate; and
a power supply device that passes a pulsed current having a current density of 10 mA/cm 2 or more and a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in an electrolyte.

2. A method of processing a surface of a SiC substrate, comprising:
anodizing a workpiece surface of the SiC substrate by passing a pulsed current having a current density of 10 mA/cm 2 or more and a period greater than 0.01 seconds and less than or equal to 20 seconds through the SiC substrate as an anode in an electrolyte; and
disposing a grinding wheel layer of a surface processing pad to face the workpiece surface and selectively removing, with the grinding wheel layer, an oxide generated on the workpiece surface through anodization.

3. The method according to claim 2 , wherein the pulsed current has an off-time and an on-time, the off-time greater than 0.01 seconds and less than or equal to 10 seconds.

4. The method according to claim 2 , wherein the period is within a range of 0.02 to 1 second.

5. The method according to claim 2 , wherein the period is 0.1 seconds or more.

6. The method according to claim 2 , further comprising:
performing, simultaneously or sequentially, the anodization of the workpiece surface and the selective removal of the oxide generated on the workpiece surface with the grinding wheel layer.

7. The method according to claim 6 , wherein the grinding wheel layer grinds or polishes the workpiece surface anodized by application of the pulsed current.

8. The method according to claim 2 , wherein
the pulse current has an on-time time and an off-time that allows a concentration of reactive species in the electrolyte in the vicinity of the workpiece surface to recover from concentration of reactive species consumed during the on-time, and
the grinding wheel layer rotates around an axis perpendicular to the workpiece surface of the SiC substrate.

Assignees

• Denso Corp

Inventors

• Aoki Kazufumi
• Maruno Naoki
• Soltani Bahman
• Kato Yuya
• Kotake Kyohei
• Mukota Shinji
• Tomisaka Manabu
• Ishihara Yasuo
• Nakazawa Shusaku
• Yamaguchi Tetsuji

Classifications

• H10P90/123 Primary

  by grinding or lapping · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P14/6324 Primary

  Formation by anodic treatments, e.g. anodic oxidation · CPC title

• H10P14/6308

  of Group IV semiconductors · CPC title

• H10P90/129

  by polishing · CPC title