Photoresist film and application thereof

US12416860B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12416860-B2
Application numberUS-202318366468-A
CountryUS
Kind codeB2
Filing dateAug 7, 2023
Priority dateAug 31, 2022
Publication dateSep 16, 2025
Grant dateSep 16, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A photoresist film and application thereof are provided. The photoresist film has a thickness T with a unit of μm, and when the photoresist film is characterized by ultraviolet-visible spectroscopy, the photoresist film has an absorbance A 405 nm at 405 nm and an absorbance A 436 nm at 436 nm, wherein 0<A 405 nm /T≤0.006 and 0<A 436 nm /T≤0.005, and the thickness T is 60 μm to 600 μm.

First claim

Opening claim text (preview).

What is claimed is: 1. A photoresist film, which has a thickness T with a unit of μm, and when the photoresist film is characterized by ultraviolet-visible spectroscopy, the photoresist film has an absorbance A 405 nm at 405 nm, an absorbance A 436 nm at 436 nm and an absorbance A 365 nm at 365 nm, wherein 0<A 405mm /T≤0.006, 0<A 436mm /T≤0.004 and 0<A 365 nm /T≤0.010, and the thickness T is 60 μm to 600 μm, wherein the ultraviolet-visible spectroscopy is measured by using an ultraviolet-visible spectrophotometer under the following operation conditions: the photoresist film is placed perpendicularly to a direction of incident light; a diffraction grating is configured as an optical splitter; testing temperature is 25° C.; testing pressure is 1 atm; an analysis mode is absorbance; a range of scanned wavelength is from 190 nm to 1100 nm; a blank sample is air; scan velocity is 2200 nm/min; a switch wavelength at which a light source is switched from a deuterium lamp to a tungsten lamp is 340.8 nm; a sampling interval is 0.2 nm; and a slit width is 2.0 nm. 2. The photoresist film of claim 1 , which is a negative photoresist film. 3. The photoresist film of claim 1 , wherein 0<A 405 nm /T≤0.002 and 0<A 436 nm /T≤0.001. 4. The photoresist film of claim 1 , which comprises: (A) an alkali-soluble polymer; (B) a component of ethylenically unsaturated compound(s); and (C) a photopolymerization initiator. 5. The photoresist film of claim 4 , wherein the component of ethylenically unsaturated compound(s) comprises bifunctional acrylic acid-based compound(s). 6. The photoresist film of claim 5 , wherein based on the weight of the component of ethylenically unsaturated compound(s), the amount of the bifunctional acrylic acid-based compound(s) is 60 wt % or more. 7. A composite film, which comprises: the photoresist film of claim 1 ; and a protective film on at least one surface of the photoresist film. 8. The composite film of claim 7 , wherein the protective film is selected from the group consisting of a polyethylene terephthalate film, a polyolefin film, and composites thereof.

Assignees

Inventors

Classifications

  • G03F7/11Primary

    having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

  • Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds (G03F7/075 takes precedence) · CPC title

  • G03F7/038Primary

    Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

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What does patent US12416860B2 cover?
A photoresist film and application thereof are provided. The photoresist film has a thickness T with a unit of μm, and when the photoresist film is characterized by ultraviolet-visible spectroscopy, the photoresist film has an absorbance A 405 nm at 405 nm and an absorbance A 436 nm at 436 nm, wherein 0<A 405 nm /T≤0.006 and 0<A 436 nm /T≤0.005, and the thickness T is 60 μm to 600 μm.
Who is the assignee on this patent?
Chang Chun Plastics Co Ltd
What technology area does this patent fall under?
Primary CPC classification G03F7/11. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 16 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).