Method of manufacturing diamond substrate

Patent metadata

Field	Value
Publication number	US-12416098-B2
Application number	US-202217856207-A
Country	US
Kind code	B2
Filing date	Jul 1, 2022
Priority date	Jul 2, 2021
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10 a of a block 10 of single crystal diamond, a step of forming a modified layer 20 , which includes a processing mark 21 of graphite and a crack 22 b extending along a surface (111) around the processing mark 21 , in a partial region of the upper surface 10 a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10 a of the block 10 by radiating the laser light B on the upper surface 10 a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10 , and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10 a of the block 10 by spontaneously propagating cleavage from the modified layer 20.

First claim

What is claimed is:

1. A method of manufacturing a diamond substrate comprising:
a step of placing a laser condensing unit configured to condense laser light so as to face an upper surface of a block of single crystal diamond;
a step of forming a modified layer, which includes a processing mark of graphite and a crack extending along a surface (111) around the processing mark, in a partial region of the upper surface of the block along the surface (111) of the single crystal diamond, at a predetermined depth from the upper surface of the block by radiating the laser light on the upper surface of the block from the laser condensing unit and condensing the laser light inside the block, and moving the laser condensing unit and the block in a relative manner two-dimensionally,
wherein the step of forming the modified layer includes:
a step of moving the laser condensing unit and the block in a relative manner in a predetermined scanning direction; and
a step of moving the laser condensing unit and the block in a relative manner in a direction orthogonal to the scanning direction at a predetermined interval, wherein the laser condensing unit moves in a relative manner two-dimensionally by a predetermined line pitch in the direction orthogonal to the scanning direction;

a step of forming a cleavage plane at the predetermined depth of a remaining region of the upper surface of the block by spontaneously propagating cleavage from the modified layer; and
a step of causing the block to spontaneously delaminate into a portion up to a depth from the upper surface to the modified layer or the cleavage plane, and a portion deeper than the modified layer or the cleavage plane,
wherein the block has a planar surface as an upper surface as the (111) surface of the single crystal diamond.

2. The method of manufacturing a diamond substrate according to claim 1 , wherein the laser light is pulsed laser light, and the graphite of the processing mark is formed by laser light reflected by a crack extending from another adjacent processing mark in at least one of the scanning direction and the direction orthogonal to the scanning direction.

3. The method of manufacturing a diamond substrate according to claim 1 , wherein the laser light has a pulse width in a range of several ns to several hundred ns.

Assignees

• Shin Etsu Polymer Co Ltd
• Shinetsu Chemical Co
• National Univ Corporation Saitama Univ

Inventors

• Ikeno Junichi
• Yamada Yohei
• Suzuki Hideki
• Matsuo Rika
• Noguchi Hitoshi

Classifications

• B23K26/53 Primary

  for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks · CPC title

• C30B33/08

  Etching · CPC title

• C30B29/04 Primary

  Diamond · CPC title

• C04B41/91

  involving the removal of part of the materials of the treated articles, e.g. etching · CPC title

• C04B41/009

  characterised by the material treated · CPC title