Method for producing a polymer film

Patent metadata

Field	Value
Publication number	US-12415938-B2
Application number	US-202318530431-A
Country	US
Kind code	B2
Filing date	Dec 6, 2023
Priority date	May 4, 2018
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

A method for producing a PEDOT film on a substrate comprising a substrate and at least one PEDOT layer on a surface of the substrate is disclosed. The method comprises applying a solution comprising an oxidant and a base inhibitor on a surface of the substrate; subjecting the oxidant-coated substrate to a polymerization step by exposing the surface(s) of the oxidant-coated substrate to EDOT monomer vapour at a polymerization temperature; and wherein, during the polymerization step, the temperature of the oxidant-coated substrate is kept at a controlled substrate temperature and wherein the controlled substrate temperature is 2-40° C. lower than the polymerization temperature. Further is disclosed a conducting PEDOT film, an electronic device comprising the conducting PEDOT film and different uses of the conducting PEDOT film. Further, is disclosed a method for producing a polymer film formed of a copolymer, a conducting polymer film, an electronic device comprising the conducting polymer film and different uses of the conducting polymer film.

First claim

The invention claimed is:

1. An electronic device comprising a conducting poly (3, 4-ethylenedioxythiophene) (PEDOT) film wherein the conducting PEDOT film comprises:
a non-conductive substrate;
a PEDOT layer on the non-conductive substrate, wherein the PEDOT layer has at least one oxidant embedded therein,
wherein the conducting PEDOT film has a conductivity greater than 3200 S/cm, wherein the conductivity is calculated according to equation s=1/r sheet d,
r sheet is a sheet resistance of less than 21Ω/□, wherein the sheet resistance is determined by a Jandel four point probe measurement, and
d is a thickness of the conducting PEDOT film,

wherein the thickness of the conducting PEDOT film is 10-500 nm, and

wherein the conducting PEDOT film has a roughness average less than 3.5 nm, wherein the roughness average is determined from atomic force microscopy (AFM) images.

2. The electronic device of claim 1 , wherein the electronic device is a display, a flat panel display, an optoelectronic device, an organic solar cell, a dye-sensitized solar cell, a perovskite solar cell, a smart window, a fuel cell, an organic electrochemical transistor, an electrochemical transducer, an electrochromic device, an electroluminescent device, an electroluminescent display, an organic capacitor, a supercapacitor, a sensor, a biosensor, an energy harvesting device, an antistatic material, a photovoltaic device, a storage device, or a thermoelectric device.

3. The electronic device of claim 1 , wherein a % transmittance (% T) of the conducting PEDOT film at 550 nm is at least 30% transmittance (T).

4. The electronic device of claim 1 , wherein a % transmittance % T+ of conducting PEDOT film at 550 nm is at least 80% transmittance (T).

5. The electronic device of claim 1 , wherein the AFM images are recorded by a Brucker TESP-MT probe with a resonant frequency of 320 kHz, a spring constant of 42 N/m, a length of 125 μm, a width of 30 μm, a Cantilever spec of 0.01-0.025 Ωcm Antimony (n) doped Silicon, 4 μm thick, and tip specs of 10-15 μm height, 8 nm radius.

6. A conducting poly (3, 4-ethylenedioxythiophene) (PEDOT) film comprising:
a non-conductive substrate;
a PEDOT layer on the non-conductive substrate, wherein the PEDOT layer has at least one oxidant embedded therein,
wherein the conducting PEDOT film has a conductivity greater than 3200 S/cm, wherein the conductivity is calculated according to equation s=1/rsheet d,
r sheet is a sheet resistance of less than 21Ω/□, wherein the sheet resistance is determined by a Jandel four point probe measurement, and
d is a thickness of the conducting PEDOT film, wherein the thickness of the conducting PEDOT film is 10-500 nm, and

wherein the conducting PEDOT film has a roughness average less than 3.5 nm, wherein the roughness average is determined from atomic force microscopy (AFM) images.

7. The conducting PEDOT film of claim 6 , wherein the % transmittance (% T) of the conducting PEDOT film at 550 nm is over 30% transmittance (T).

8. The conducting PEDOT film of claim 6 , wherein the non-conductive substrate is glass or polyethylene terephthalate (PET).

9. The conducting PEDOT film of claim 6 , wherein the at least one oxidant comprises Iron (III) p-toluenesulfonate hexahydrate (FETOS).

10. The conducting PEDOT film of claim 6 , wherein the PEDOT layer comprises a copolymer with one of the monomers being EDOT.

11. The conducting PEDOT film of claim 6 , wherein the thickness of the conducting PEDOT film is 10-200 nm.

Assignees

• Turun Yliopisto

Inventors

• Kvarnström Carita
• Damlin Pia
• Salomäki Mikko
• Nauma Mauri
• Yewale Rahul Balu

Classifications

• C08J7/16

  with polymerisable compounds · CPC title

• C08J5/18

  Manufacture of films or sheets · CPC title

• C08G2261/95

  Use in organic luminescent diodes · CPC title

• C08G2261/94

  Applications in sensors, e.g. biosensors · CPC title

• C08G2261/91

  Photovoltaic applications · CPC title